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Polarization-dependent photoinduced metal-insulator transitions in manganites.
Deng, Lina; Zhang, Weiye; Lin, Hanxuan; Xiang, Lifen; Xu, Ying; Wang, Yadi; Li, Qiang; Zhu, Yinyan; Zhou, Xiaodong; Wang, Wenbin; Yin, Lifeng; Guo, Hangwen; Tian, Chuanshan; Shen, Jian.
Afiliação
  • Deng L; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Zhang W; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Lin H; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Xiang L; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Xu Y; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Wang Y; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Li Q; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China.
  • Zhu Y; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China.
  • Zhou X; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China.
  • Wang W; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China.
  • Yin L; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Zhangjiang Fudan International Innovation Center, Fudan Uni
  • Guo H; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Zhangjiang Fudan International Innovation Center, Fudan University, Shanghai 201210, China. Electronic address: hangwenguo@fudan.e
  • Tian C; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China. Electronic address: cstian@fudan.edu.cn.
  • Shen J; State Key Laboratory of Surface Physics, Institute for Nanoelectronic Devices and Quantum Computing, and Department of Physics, Fudan University, Shanghai 200433, China; Shanghai Research Center for Quantum Sciences, Shanghai 201315, China; Zhangjiang Fudan International Innovation Center, Fudan Uni
Sci Bull (Beijing) ; 69(2): 183-189, 2024 Jan 30.
Article em En | MEDLINE | ID: mdl-38057234
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China
Texto completo
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PubMed Links
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Sci Bull (Beijing) Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China