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Author Correction: Controlling the helicity of light by electrical magnetization switching.
Dainone, Pambiang Abel; Prestes, Nicholas Figueiredo; Renucci, Pierre; Bouché, Alexandre; Morassi, Martina; Devaux, Xavier; Lindemann, Markus; George, Jean-Marie; Jaffrès, Henri; Lemaitre, Aristide; Xu, Bo; Stoffel, Mathieu; Chen, Tongxin; Lombez, Laurent; Lagarde, Delphine; Cong, Guangwei; Ma, Tianyi; Pigeat, Philippe; Vergnat, Michel; Rinnert, Hervé; Marie, Xavier; Han, Xiufeng; Mangin, Stephane; Rojas-Sánchez, Juan-Carlos; Wang, Jian-Ping; Beard, Matthew C; Gerhardt, Nils C; Zutic, Igor; Lu, Yuan.
Afiliação
  • Dainone PA; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Prestes NF; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
  • Renucci P; Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France.
  • Bouché A; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Morassi M; Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, France.
  • Devaux X; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Lindemann M; Photonics and Terahertz Technology, Ruhr-Universität Bochum, Bochum, Germany.
  • George JM; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
  • Jaffrès H; Laboratoire Albert Fert, CNRS, Thales, Université Paris-Saclay, Palaiseau, France.
  • Lemaitre A; Université Paris-Saclay, CNRS, Centre de Nanosciences et de Nanotechnologies, Palaiseau, France.
  • Xu B; Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing, China.
  • Stoffel M; College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing, China.
  • Chen T; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Lombez L; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Lagarde D; Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France.
  • Cong G; Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France.
  • Ma T; Platform Photonics Research Center, National Institute of Advanced Industrial Science and Technology, Tsukuba, Japan.
  • Pigeat P; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, China.
  • Vergnat M; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Rinnert H; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Marie X; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Han X; Université de Toulouse, INSA-CNRS-UPS, LPCNO, Toulouse, France.
  • Mangin S; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, University of Chinese Academy of Sciences, Chinese Academy of Sciences, Beijing, China.
  • Rojas-Sánchez JC; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Wang JP; Institut Jean Lamour, Université de Lorraine, CNRS, UMR 7198, Nancy, France.
  • Beard MC; Department of Electrical and Computer Engineering, University of Minnesota, Minneapolis, MN, USA.
  • Gerhardt NC; Chemistry and Nanoscience Center, National Renewable Energy Laboratory, Golden, CO, USA.
  • Zutic I; Photonics and Terahertz Technology, Ruhr-Universität Bochum, Bochum, Germany.
  • Lu Y; Department of Physics, University at Buffalo, State University of New York, Buffalo, NY, USA.
Nature ; 629(8010): E8, 2024 May.
Article em En | MEDLINE | ID: mdl-38609503

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2024 Tipo de documento: Article País de afiliação: França

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: Nature Ano de publicação: 2024 Tipo de documento: Article País de afiliação: França