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Anomalous Electroluminescence Characteristics of Perovskite Modules.
Wu, Haodong; Zhang, Junchuan; Zhang, Yi; Cao, Fangfang; Qiu, Zhiheng; Zhang, Liping; Asiri, Abdullah M; Dyson, Paul J; Nazeeruddin, Mohammad Khaja; Ye, Jichun; Xiao, Chuanxiao.
Afiliação
  • Wu H; Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China.
  • Zhang J; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315200, China.
  • Zhang Y; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315200, China.
  • Cao F; University of Science and Technology of China, Hefei 230041, China.
  • Qiu Z; Institute of Chemical Sciences and Engineering, École Polytechnique Fédérale de Lausanne (EPFL), CH-1015 Lausanne, Switzerland.
  • Zhang L; Faculty of Electrical Engineering and Computer Science, Ningbo University, Ningbo 315211, China.
  • Asiri AM; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315200, China.
  • Dyson PJ; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315200, China.
  • Nazeeruddin MK; University of Science and Technology of China, Hefei 230041, China.
  • Ye J; Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315200, China.
  • Xiao C; University of Science and Technology of China, Hefei 230041, China.
ACS Appl Mater Interfaces ; 16(32): 41986-41995, 2024 Aug 14.
Article em En | MEDLINE | ID: mdl-39093718
ABSTRACT
Spatially resolved photoluminescence (PL) and electroluminescence (EL) imaging technologies play a crucial role in evaluating the performance and stability of photovoltaic devices. However, their application in perovskite devices presents unique challenges. In this study, we report a discrepancy between the electrical performance of perovskite solar modules (PSMs) and the EL images. Following the application of a reverse bias voltage, we observed an increase in EL brightness associated with prolonged carrier lifetime and transport length. Furthermore, cross-sectional Kelvin probe force microscopy identified a significant potential increase primarily at the electron-transport layer (ETL) side after reverse bias, suggesting the presence of defective ETL/perovskite interfaces with filled hole traps. To address this EL mismatch, we proposed a mild reverse current recovery method aimed at aligning EL images with the cell performance without compromising device efficiency. This approach effectively mitigates discrepancies, ensuring alignment between the device performance and EL imaging. Our study underscores that caution is required when utilizing EL imaging to monitor spatial homogeneity in PSMs for future industrial production.
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Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China

Texto completo: 1 Base de dados: MEDLINE Idioma: En Revista: ACS Appl Mater Interfaces Assunto da revista: BIOTECNOLOGIA / ENGENHARIA BIOMEDICA Ano de publicação: 2024 Tipo de documento: Article País de afiliação: China