Development of Self-Doped Monolayered 2D MoS2 for Enhanced Photoresponsivity.
Small
; : e2403225, 2024 Aug 03.
Article
em En
| MEDLINE
| ID: mdl-39096114
ABSTRACT
Transition metal dichalcogenides (TMDs) exist in two distinct phases the thermodynamically stable trigonal prismatic (2H) and the metastable octahedral (1T) phase. Phase engineering has emerged as a potent technique for enhancing the performance of TMDs in optoelectronics applications. Nevertheless, understanding the mechanism of phase transition in TMDs and achieving large-area synthesis of phase-controlled TMDs continue to pose significant challenges. This study presents the synthesis of large-area monolayered 2H-MoS2 and mixed-phase 1T/2H-MoS2 by controlling the growth temperature in the chemical vapor deposition (CVD) method without use of a catalyst. The field-effect transistors (FETs) devices fabricated with 1T/2H-MoS2 mixed-phase show an on/off ratio of 107. Photo response devices fabricated with 1T/2H-MoS2 mixed-phase show ≈55 times enhancement in responsivity (from 0.32 to 17.4 A W-1) and 102 times increase in the detectivity (from 4.1 × 1010 to 2.48 × 1012 cm Hz W-1) compare to 2H-MoS2. Introducing the metallic 1T phase within the 2H phase contributes additional carriers to the material, which prevents the electron-hole recombination and thereby increases the carrier density in the 1T/2H-MoS2 mixed-phase in comparison to 2H-MoS2. This work provides insights into the self-doping effects of 1T phase in 2H MoS2, enabling the tuning of 2D TMDs properties for optoelectronic applications.
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Base de dados:
MEDLINE
Idioma:
En
Revista:
Small
/
Small (Weinh., Internet)
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Small (Weinheim. Internet)
Assunto da revista:
ENGENHARIA BIOMEDICA
Ano de publicação:
2024
Tipo de documento:
Article
País de afiliação:
Índia