Trade-off analysis between gm/ID and fT of GNR-FETs with single-gate and double-gate device structure.

This study examines the operational parameters of field-effect transistors (FETs) using single-gate (SG) and double-gate (DG) graphene nanoribbons (GNRs) within the analog/RF domain. A detailed exploration is conducted through an atomistic pz orbital model, derived from the Hamiltonian of graphene nanoribbons, employing the nonequilibrium Green's function formalism (NEGF) for analysis. The atomic characteristics of the GNRFETs channel are accurately described by utilizing a tight-binding Hamiltonian with an atomistic pz orbital basis set. The primary focus of the analysis revolves around essential analog/RF parameters such as transconductance, transconductance generation factor (TGF), output resistance, early voltage, intrinsic gain, gate capacitance, cut-off frequency, and transit time. Furthermore, the study assesses the gain frequency product (GFP), transfer frequency product (TFP), and gain transfer frequency product (GTFP) to evaluate the balance between transistor efficiency, gain, and cut-off frequency. The research outcomes indicate that double-gate GNRFETs exhibit superior analog/RF performance in comparison to their single-gate counterparts. However, both types of devices demonstrate cut-off frequencies in the gigahertz range. The extensive data presented in this study provides valuable insights into the characteristics of SG and DG GNRFETs, particularly in terms of the figure-of-merit (FoM) for analog/RF performance, offering a comprehensive analysis of the trade-offs in analog applications. In addition, the analysis has been extended be performing a high-performance hybrid 6T static random-access memory (SRAM) to get the impact in their circuit level variation as well as improvement in their circuit performance.

The understanding of the impact of efficiently optimized underlap length on analog/RF performance parameters of GNR-FETs.

The aim of this study is to examine the analog/RF performance characteristics of graphene nanoribbon (GNR) field-effect transistors (FETs) using a novel technique called underlap engineering. The study employs self-consistent atomistic simulations and the non-equilibrium Green's function (NEGF) formalism. Initially, the optimal underlap length for the GNR-FET by device has been determined evaluating the ON-current (ION) to OFF-current (IOFF) ratio, which is a critical parameter for digital applications. Subsequently, the impact of underlap engineering on analog/RF performance metrics has been analyzed and conducting a comprehensive trade-off analysis considering parameters such as intrinsic-gain, transistor efficiency, and device cut-off frequency. The results demonstrate that the device incorporating the underlap mechanism exhibits superior performance in terms of the ION/IOFF ratio, transconductance generation factor (TGF), output resistance (r0), intrinsic gain (gmr0), gain frequency product (GFP), and gain transfer frequency product (GTFP). However, the device without the underlap effect demonstrates the highest transconductance (gm) and cut-off frequency (fT). Finally, a linearity analysis has been conducted to compare the optimized GNR-FET device with the conventional GNR-FET device without the underlap effect.