Annealing effect on the structural and optical behavior of ZnO:Eu3+ thin film grown using RF magnetron sputtering technique and application to dye sensitized solar cells.

Eu-doped ZnO (ZnO:Eu3+) thin films deposited by RF magnetron sputtering have been investigated to establish the effect of annealing on the red photoluminescence. PL spectra analysis reveal a correlation between the characteristics of the red photoluminescence and the annealing temperature, suggesting efficient energy transfer from the ZnO host to the Eu3+ ions as enhanced by the intrinsic defects levels. Five peaks corresponding to 5D0-7FJ transitions were observed and attributed to Eu3+ occupancy in the lattice sites of ZnO thin films. As a proof of concept a dye sensitized solar cell with ZnO:Eu3+ thin films of high optical transparency was fabricated and tested yielding a PCE of 1.33% compared to 1.19% obtained from dye sensitized solar cells (DSSC) with pristine ZnO without Eu produced indicating 11.1% efficiency enhancement which could be attributed to spectral conversion by the ZnO:Eu3+.

Probing the stoichiometry dependent catalytic activity of nickel selenide counter electrodes in the redox reaction of iodide/triiodide electrolyte in dye sensitized solar cells.

Nickel selenide (Ni x Se y ) systems have received much attention in recent years as potential low cost counter electrodes (CEs) in dye sensitized solar cells (DSSCs). Their electrocatalytic activities are comparable to that of the conventional platinum CE. Despite their achievements, the effect of stoichiometry on their catalytic performance as CEs in DSSCs still remains unclear, hence the motivation for this work. Different stoichiometries of Ni x Se y were synthesized via a colloidal method in oleylamine or oleylamine/oleic acid mixture at the appropriate synthetic temperature and Ni to Se precursor ratio. X-ray diffraction revealed that different stoichiometries of nickel selenide were formed namely, NiSe2, Ni3Se4, Ni0.85Se, NiSe and Ni3Se2. Scanning electron microscopy showed that all the stoichiometries had predominantly spherical-like morphologies. Cyclic voltammetry, electrochemical impedance spectroscopy analysis and the photovoltaic performances of the DSSCs fabricated using the different Ni x Se y CEs revealed that selenium rich stoichiometries performed better than the nickel rich ones. Consequently, the catalytic activity towards the redox reaction of the triiodide/iodide electrolyte and hence the power conversion efficiency (PCE) followed the order of NiSe2 > Ni3Se4 > Ni0.85Se > NiSe > Ni3Se2 with PCE values of 3.31%, 3.25%, 3.17%, 2.35% and 1.52% respectively under ambient conditions.

Effect of thermal treatment on ZnO:Tb3+ nano-crystalline thin films and application for spectral conversion in inverted organic solar cells.

Down conversion has been applied to minimize thermalization losses in photovoltaic devices. In this study, terbium-doped ZnO (ZnO:Tb3+) thin films were deposited on ITO-coated glass, quartz and silicon substrates using the RF magnetron sputtering technique fitted with a high-purity (99.99%) Tb3+-doped ZnO target (97% ZnO, 3% Tb) for use in organic solar cells as a bi-functional layer. A systematic study of the film crystallization dynamics was carried out through elevated temperature annealing in Ar ambient. The films were characterized using grazing incidence (XRD), Rutherford backscattering spectrometry (RBS), atomic force microscopy, and UV-visible transmittance and photoluminescence measurements at an excitation wavelength of 244 nm. The tunability of size and bandgap of ZnO:Tb3+ nanocrystals with annealing exhibited quantum confinement effects, which enabled the control of emission characteristics in ZnO:Tb3+. Energy transfer of ZnO → Tb3+ (5D3-7F5) was also observed from the photoluminescence (PL) spectra. At an inter-band resonance excitation of around 300-400 nm, a typical emission band from Tb3+ was obtained. The ZnO:Tb3+ materials grown on ITO-coated glass were then used as bi-functional layers in an organic solar cell based on P3HT:PCBM blend, serving as active layers in an inverted device structure. Energy transfer through down conversion between ZnO and Tb3+ led to enhanced absorption in P3HT:PCBM in the 300-400 nm range and subsequently augmented J sc of a Tb3+-based device by 17%.

Fabrication of a Schottky Device Using CuSe Nanoparticles: Colloidal versus Microwave Digestive Synthesis.

Herein we report on a nearly ideal Schottky diode device fabricated from Cu(2-x)Se nanoparticles synthesized using the microwave digestive method. The thermionic theory using data extracted from the experimental I-V curve resulted in the ideality factor of 4.35 and the barrier height of 0.895 eV whilst the Cheung's method resulted in the ideality factor, barrier height and series resistance of 1.04, 0.00259 eV and 0.870 Ω respectively. The Cheung's method is thought to be the most accurate as it takes into account the series resistance. The obtained values therefore are indicative of good diode behaviour of the device and this is a highly sought after goal in all electronic materials development.