Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Mais filtros

Base de dados
Ano de publicação
Tipo de documento
Intervalo de ano de publicação
1.
Sensors (Basel) ; 24(15)2024 Jul 31.
Artigo em Inglês | MEDLINE | ID: mdl-39124005

RESUMO

Traditional heterogeneous networks (HetNets) are constrained by their hardware design and configuration. These HetNets have a limited ability to adapt to variations in network dynamics. Software-defined radio technology has the potential to address this adaptability issue. In this paper, we introduce a software-defined radio (SDR)-based long-term evolution licensed assisted access (LTE-LAA) architecture for next-generation communication networks. We show that with proper design and tuning of the proposed architecture, high-level adaptability in HetNets becomes feasible with a higher throughput and lower power consumption. Firstly, maximizing the throughput and minimizing power consumption are formulated as a constrained optimization problem. Then, the obtained solution, alongside a heuristic solution, is compared against the solutions to existing approaches, showing our proposed strategy is drastically superior in terms of both power efficiency and system throughput. This study is then concluded by employing artificial intelligence techniques in multi-objective optimization, namely random forest regression, particle swarm, and genetic algorithms, to balance out the trade-offs between maximizing the throughput and power efficiency and minimizing energy consumption. These investigations demonstrate the potential of employing the proposed LTE-LAA architecture in addressing the requirements of next-generation HetNets in terms of power, throughput, and green scalability.

2.
Light Sci Appl ; 12(1): 162, 2023 Jun 28.
Artigo em Inglês | MEDLINE | ID: mdl-37380663

RESUMO

Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

3.
eLight ; 3(1): 1, 2023.
Artigo em Inglês | MEDLINE | ID: mdl-36618904

RESUMO

Integrated silicon photonics has sparked a significant ramp-up of investment in both academia and industry as a scalable, power-efficient, and eco-friendly solution. At the heart of this platform is the light source, which in itself, has been the focus of research and development extensively. This paper sheds light and conveys our perspective on the current state-of-the-art in different aspects of application-driven on-chip silicon lasers. We tackle this from two perspectives: device-level and system-wide points of view. In the former, the different routes taken in integrating on-chip lasers are explored from different material systems to the chosen integration methodologies. Then, the discussion focus is shifted towards system-wide applications that show great prospects in incorporating photonic integrated circuits (PIC) with on-chip lasers and active devices, namely, optical communications and interconnects, optical phased array-based LiDAR, sensors for chemical and biological analysis, integrated quantum technologies, and finally, optical computing. By leveraging the myriad inherent attractive features of integrated silicon photonics, this paper aims to inspire further development in incorporating PICs with on-chip lasers in, but not limited to, these applications for substantial performance gains, green solutions, and mass production.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA