Velocimetry of GHz elastic surface waves in quartz and fused silica based on full-field imaging of pump-probe reflectometry.

This study reports an imaging method for gigahertz surface acoustic waves in transparent layers using infrared subpicosecond laser pulses in the ablation regime and an optical pump-probe technique. The reflectivity modulations due to the photoelastic effect of generated multimodal surface acoustic waves were imaged by an sCMOS camera illuminated by the time-delayed, frequency-doubled probe pulses. Moving the delay time between 6 . 0 n s to 11 . 5 n s , image stacks of wave field propagation were created. Two representative samples were investigated: wafers of isotropic fused silica and anisotropic x-cut quartz. Rayleigh (SAW) and longitudinal dominant high-velocity pseudo-surface acoustic wave (HVPSAW) modes could be observed and tracked along a circular grid around the excitation center, allowing the extraction of angular profiles of the propagation velocity. In quartz, the folding of a PSAW was observed. A finite element simulation was developed to predict the measurement results. The simulation and measurement were in good agreement with a relative error of 2 % to 5 %. These results show the potential for fast and full-field imaging of laser-generated ultrasonic surface wave modes, which can be utilized for the characterization of thin transparent samples such as semiconductor wafers or optical crystals in the gigahertz frequency range.

Indium tin oxide ultrafast laser lift-off ablation mechanisms and damage minimization.

We draw comparisons between the ablation and damage mechanisms that occur for both film and substrate irradiation using atomic force microscopy, scanning electron microscopy, and pump-probe reflectometry. For substrate irradiation, energy absorbed at the film-substrate interface creates a confined energy situation, resulting in a photomechanical lift-off. A partial ablation at the edges of the ablated zone formed the burr and was reduced in height by minimizing the area subject to the partial ablation threshold fluence. Substrate damage is understood to arise from free electron diffusion from indium tin oxide and subsequent laser heating. We establish a process window for substrate irradiation in a single-pulse ablation regime between approximately two to three times the ablation threshold of 0.18 J/cm2, validating the process window seen in literature and provide a crucial understanding for the ablation mechanisms of transparent conductive films.