Ultra-high on-chip optical gain in erbium-based hybrid slot waveguides.

Efficient and reliable on-chip optical amplifiers and light sources would enable versatile integration of various active functionalities on the silicon platform. Although lasing on silicon has been demonstrated with semiconductors by using methods such as wafer bonding or molecular beam epitaxy, cost-effective mass production methods for CMOS-compatible active devices are still lacking. Here, we report ultra-high on-chip optical gain in erbium-based hybrid slot waveguides with a monolithic, CMOS-compatible and scalable atomic-layer deposition process. The unique layer-by-layer nature of atomic-layer deposition enables atomic scale engineering of the gain layer properties and straightforward integration with silicon integrated waveguides. We demonstrate up to 20.1 ± 7.31 dB/cm and at least 52.4 ± 13.8 dB/cm net modal and material gain per unit length, respectively, the highest performance achieved from erbium-based planar waveguides integrated on silicon. Our results show significant advances towards efficient on-chip amplification, opening a route to large-scale integration of various active functionalities on silicon.

Nanowire network-based multifunctional all-optical logic gates.

All-optical nanoscale logic components are highly desired for various applications because light may enable logic functions to be performed extremely quickly without the generation of heat and cross-talk. All-optical computing at nanoscale is therefore a promising alternative but requires the development of a complete toolbox capable of various logic functionalities. We demonstrate nanoscale all-optical switches by exploiting the polarization-dependent light emission property of crossbar InP and AlGaAs nanowire networks. These networks can perform various logic operations, such as AND, OR, NAND, and NOR binary logic functions. Furthermore, on the basis of these logic operations, our networks successfully enable all-optical arithmetic binary calculations, such as n-bit addition, to be conducted. Our results underscore the promise of assembled semiconductor nanowire networks as a building block of on-chip all-optical logic components for future nanophotonics.

Nonlinear Optics with 2D Layered Materials.

2D layered materials (2DLMs) are a subject of intense research for a wide variety of applications (e.g., electronics, photonics, and optoelectronics) due to their unique physical properties. Most recently, increasing research efforts on 2DLMs are projected toward the nonlinear optical properties of 2DLMs, which are not only fascinating from the fundamental science point of view but also intriguing for various potential applications. Here, the current state of the art in the field of nonlinear optics based on 2DLMs and their hybrid structures (e.g., mixed-dimensional heterostructures, plasmonic structures, and silicon/fiber integrated structures) is reviewed. Several potential perspectives and possible future research directions of these promising nanomaterials for nonlinear optics are also presented.

Measurement of Nanowire Optical Modes Using Cross-Polarization Microscopy.

A method to detect optical modes from vertical InGaAs nanowires (NWs) using cross-polarization microscopy is presented. Light scattered from the optical modes in the NWs is detected by filtering out the polarized direct reflection with a crossed polarizer. A spectral peak and a valley were seen to red-shift with increasing NW diameter in the measured spectra. The peak was assigned to scattering from the TE01 optical mode and the valley was an indication of the HE11 mode, based on finite-element and scattering matrix method simulations. The cross-polarization method can be used to experimentally determine the spectral positions of the TE01 and HE11 optical modes. The modes are significantly more visible in comparison to conventional reflectance measurements. The method can be beneficial in the characterization of NW solar cells, light-emitting diodes and lasers where precise mode control is required.

Ultra-strong nonlinear optical processes and trigonal warping in MoS2 layers.

Nonlinear optical processes, such as harmonic generation, are of great interest for various applications, e.g., microscopy, therapy, and frequency conversion. However, high-order harmonic conversion is typically much less efficient than low-order, due to the weak intrinsic response of the higher-order nonlinear processes. Here we report ultra-strong optical nonlinearities in monolayer MoS2 (1L-MoS2): the third harmonic is 30 times stronger than the second, and the fourth is comparable to the second. The third harmonic generation efficiency for 1L-MoS2 is approximately three times higher than that for graphene, which was reported to have a large χ (3). We explain this by calculating the nonlinear response functions of 1L-MoS2 with a continuum-model Hamiltonian and quantum mechanical diagrammatic perturbation theory, highlighting the role of trigonal warping. A similar effect is expected in all other transition-metal dichalcogenides. Our results pave the way for efficient harmonic generation based on layered materials for applications such as microscopy and imaging.Harmonic generation is a nonlinear optical process occurring in a variety of materials; the higher orders generation is generally less efficient than lower orders. Here, the authors report that the third-harmonic is thirty times stronger than the second-harmonic in monolayer MoS2.

Rapid visualization of grain boundaries in monolayer MoS2 by multiphoton microscopy.

Grain boundaries have a major effect on the physical properties of two-dimensional layered materials. Therefore, it is important to develop simple, fast and sensitive characterization methods to visualize grain boundaries. Conventional Raman and photoluminescence methods have been used for detecting grain boundaries; however, these techniques are better suited for detection of grain boundaries with a large crystal axis rotation between neighbouring grains. Here we show rapid visualization of grain boundaries in chemical vapour deposited monolayer MoS2 samples with multiphoton microscopy. In contrast to Raman and photoluminescence imaging, third-harmonic generation microscopy provides excellent sensitivity and high speed for grain boundary visualization regardless of the degree of crystal axis rotation. We find that the contrast associated with grain boundaries in the third-harmonic imaging is considerably enhanced by the solvents commonly used in the transfer process of two-dimensional materials. Our results demonstrate that multiphoton imaging can be used for fast and sensitive characterization of two-dimensional materials.

Rapid and Large-Area Characterization of Exfoliated Black Phosphorus Using Third-Harmonic Generation Microscopy.

Black phosphorus (BP) is a layered semiconductor that recently has been the subject of intense research due to its novel electrical and optical properties, which compare favorably to those of graphene and the transition metal dichalcogenides. In particular, BP has a direct bandgap that is thickness-dependent and highly anisotropic, making BP an interesting material for nanoscale optical and optoelectronic applications. Here, we present a study of the anisotropic third-harmonic generation (THG) in exfoliated BP using a fast scanning multiphoton characterization method. We find that the anisotropic THG arises directly from the crystal structure of BP. We calculate the effective third-order susceptibility of BP to be ∼1.64 × 10-19 m2 V-2. Further, we demonstrate that multiphoton microscopy can be used for rapid, large-area characterization indexing of the crystallographic orientations of many exfoliated BP flakes from one set of multiphoton images. This method is therefore beneficial for samples of areas ∼1 cm2 in future investigations of the properties and growth of BP.