Barrier Height, Ideality Factor and Role of Inhomogeneities at the AlGaN/GaN Interface in GaN Nanowire Wrap-Gate Transistor.

It is essential to understand the barrier height, ideality factor, and role of inhomogeneities at the metal/semiconductor interfaces in nanowires for the development of next generation nanoscale devices. Here, we investigate the drain current (Ids)-gate voltage (Vgs) characteristics of GaN nanowire wrap-gate transistors (WGTs) for various gate potentials in the wide temperature range of 130-310 K. An anomalous reduction in the experimental barrier height and rise in the ideality factor with reducing the temperature have been perceived. It is noteworthy that the variations in barrier height and ideality factor are attributed to the spatial barrier inhomogeneities at the AlGaN/GaN interface in the GaN nanowire WGTs by assuming a double Gaussian distribution of barrier heights at 310-190 K (distribution 1) and 190-130 K (distribution 2). The standard deviation for distribution 2 is lower than that of distribution 1, which suggests that distribution 2 reflects more homogeneity at the AlGaN/GaN interface in the transistor's source/drain regions than distribution 1.

Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor.

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance in this transistor remains essentially unaltered up to a temperature of 240 K and then increases after that as the temperature rises. This is true for increasing temperature at gate voltages less than threshold voltage (Vgs < Vth). Sharp fluctuations happen when the temperature rises with a gate voltage of Vth < Vgs < VFB. The conductance steadily decreases with increasing temperature after increasing the gate bias to Vgs > VFB. These phenomena are possibly attributed to phonon and impurity scattering processes occurring on the surface or core of GaN nanowires.

Viscosity-Controllable Graphene Oxide Colloids Using Electrophoretically Deposited Graphene Oxide Sheets.

Graphene oxide (GO) is one of the interesting ink materials owing to its fascinating properties, such as high dissolubility in water and high controllable electric properties. For versatile printing application, the viscosity of GO colloids should be controlled in order to meet the specific process requirements. Here, we report on the relatively rapid fabrication of viscosity-increased GO (VIGO) colloids mixed with electrophoretically deposited GO sheets (EPD-GO). As the GO colloid concentration, applied voltage, and deposition time increase, the viscosity of the GO colloids becomes high. The reason for the improved viscosity of GO colloids is because EPD-GO has parallel stacked GO sheets. The GO and VIGO colloids are compared and characterized using various chemical and structural analyzers. Consequently, our simple and fast method for the fabrication of GO colloids with enhanced viscosity can be used for producing inks for flexible and printed electronics.