Elastic strain mapping of plastically deformed materials by TEM.

A method for mapping elastic strains by TEM in plastically deformed materials is presented. A characteristic feature of plastically deformed materials, which cannot be handled by standard strain measurement method, is the presence of orientation gradients. To circumvent this issue, we couple orientation and strain maps obtained from scanning precession electron diffraction datasets. More specifically, orientation gradients are taken into account by 1) identifying the diffraction spot positions in a reference pattern, 2) measuring the disorientation between the diffraction patterns in the map and the reference pattern, 3) rotating the coordinate system following the measured disorientation at each position in the map, 4) calculating strains in the rotated coordinate system. At present, only azimuthal rotations of the crystal are handled. The method is illustrated on a Cr2AlC monocrystal micropilar deformed in near simple flexion during a nanomechanical test. After plastic deformation, the sample contains dislocations arranged in pile-ups and walls. The strain-field around each dislocation is consistent with theory, and a clear difference is observed between the strain fields around pile-ups and walls. It is further remarked that strain maps allow for the orientation of the Burgers vector to be identified. Since the loading undergone by the sample is known, this also allows for the position of the dislocation sources to be estimated. Perspectives for the study of deformed materials are finally discussed.

Size-induced twinning in InSb semiconductor during room temperature deformation.

Room-temperature deformation mechanism of InSb micro-pillars has been investigated via a multi-scale experimental approach, where micro-pillars of 2 µm and 5 µm in diameter were first fabricated by focused ion beam (FIB) milling and in situ deformed in the FIB-SEM by micro-compression using a nano-indenter equipped with a flat tip. Strain rate jumps have been performed to determine the strain rate sensitivity coefficient and the related activation volume. The activation volume is found to be of the order of 3-5 b3, considering that plasticity is mediated by Shockley partial dislocations. Transmission electron microscopy (TEM) thin foils were extracted from deformed micro-pillars via the FIB lift-out technique: TEM analysis reveals the presence of nano-twins as major mechanism of plastic deformation, involving Shockley partial dislocations. The presence of twins was never reported in previous studies on the plasticity of bulk InSb: this deformation mechanism is discussed in the context of the plasticity of small-scale samples.