RESUMO
The optical response of semiconducting monolayer transition-metal dichalcogenides (TMDCs) is dominated by strongly bound excitons that are stable even at room temperature. However, substrate-related effects such as screening and disorder in currently available specimens mask many anticipated physical phenomena and limit device applications of TMDCs. Here, we demonstrate that that these undesirable effects are strongly suppressed in suspended devices. Extremely robust (photogain > 1,000) and fast (response time < 1 ms) photoresponse allow us to study, for the first time, the formation, binding energies, and dissociation mechanisms of excitons in TMDCs through photocurrent spectroscopy. By analyzing the spectral positions of peaks in the photocurrent and by comparing them with first-principles calculations, we obtain binding energies, band gaps and spin-orbit splitting in monolayer TMDCs. For monolayer MoS2, in particular, we obtain an extremely large binding energy for band-edge excitons, E bind ≥ 570 meV. Along with band-edge excitons, we observe excitons associated with a van Hove singularity of rather unique nature. The analysis of the source-drain voltage dependence of photocurrent spectra reveals exciton dissociation and photoconversion mechanisms in TMDCs.
RESUMO
We explore the dependence of electrical transport in a graphene field effect transistor (GraFET) on the flow of water/sodium chloride electrolyte within the immediate vicinity of that transistor. We find large and reproducible shifts in the charge neutrality point of GraFETs that are dependent on the liquid velocity and the ion concentration. We show that these shifts are consistent with the variation of the local electrochemical potential of the liquid next to graphene that are caused by the fluid flow (streaming potential). Furthermore, we utilize the sensitivity of electrical transport in GraFETs to the parameters of the fluid flow to demonstrate graphene-based mass flow and ionic concentration sensing. We successfully detect a flow as small as â¼70 nL/min and detect a change in the ionic concentration as small as â¼40 nM.
Assuntos
Grafite/química , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Reologia/instrumentação , Transistores Eletrônicos , Desenho de Equipamento , Análise de Falha de Equipamento , Tamanho da PartículaRESUMO
Mechanically exfoliated graphene mounted on a SiO2/Si substrate was subjected to HF/H(2)O etching or irradiation by energetic protons. In both cases gas was released from the SiO2 and accumulated at the graphene/SiO2 interface resulting in the formation of "bubbles" in the graphene sheet. Formation of these "bubbles" demonstrates the robust nature of single layer graphene membranes, which are capable of containing mesoscopic volumes of gas. In addition, effective mass transport at the graphene/SiO2 interface has been observed.
Assuntos
Cristalização/métodos , Grafite/química , Membranas Artificiais , Microscopia Eletrônica de Varredura/métodos , Nanoestruturas/química , Nanoestruturas/ultraestrutura , Nanotecnologia/métodos , Gases/química , Substâncias Macromoleculares/química , Teste de Materiais , Conformação Molecular , Tamanho da Partícula , Propriedades de SuperfícieRESUMO
The resistivity of ultraclean suspended graphene is strongly temperature (T) dependent for 5
RESUMO
The conductivity of graphene samples with various levels of disorder is investigated for a set of specimens with mobility in the range of 1-20x10(3) cm2/V sec. Comparing the experimental data with the theoretical transport calculations based on charged impurity scattering, we estimate that the impurity concentration in the samples varies from 2-15x10(11) cm(-2). In the low carrier density limit, the conductivity exhibits values in the range of 2-12e2/h, which can be related to the residual density induced by the inhomogeneous charge distribution in the samples. The shape of the conductivity curves indicates that high mobility samples contain some short-range disorder whereas low mobility samples are dominated by long-range scatterers.