Quantifying the critical thickness of electron hybridization in spintronics materials.

In the rapidly growing field of spintronics, simultaneous control of electronic and magnetic properties is essential, and the perspective of building novel phases is directly linked to the control of tuning parameters, for example, thickness and doping. Looking at the relevant effects in interface-driven spintronics, the reduced symmetry at a surface and interface corresponds to a severe modification of the overlap of electron orbitals, that is, to a change of electron hybridization. Here we report a chemically and magnetically sensitive depth-dependent analysis of two paradigmatic systems, namely La1-xSrxMnO3 and (Ga,Mn)As. Supported by cluster calculations, we find a crossover between surface and bulk in the electron hybridization/correlation and we identify a spectroscopic fingerprint of bulk metallic character and ferromagnetism versus depth. The critical thickness and the gradient of hybridization are measured, setting an intrinsic limit of 3 and 10 unit cells from the surface, respectively, for (Ga,Mn)As and La1-xSrxMnO3, for fully restoring bulk properties.

Understanding the electronic structure of IrO2 using hard-X-ray photoelectron spectroscopy and density-functional theory.

The electronic structure of IrO2 has been investigated using hard x-ray photoelectron spectroscopy and density-functional theory. Excellent agreement is observed between theory and experiment. We show that the electronic structure of IrO2 involves crystal field splitting of the iridium 5d orbitals in a distorted octahedral field. The behavior of IrO2 closely follows the theoretical predictions of Goodenough for conductive rutile-structured oxides [J. B. Goodenough, J. Solid State Chem. 3, 490 (1971).

Identification of different electron screening behavior between the bulk and surface of (Ga,Mn)As.

We report x-ray photoemission spectroscopy results on (Ga,Mn)As films as a function of both temperature and Mn doping. Analysis of Mn 2p core level spectra reveals the presence of a distinct electronic screening channel in the bulk, hitherto undetected in more surface sensitive analysis. Comparison with model calculations identifies the character of the Mn 3d electronic states and clarifies the role, and the difference between surface and bulk, of hybridization in mediating the ferromagnetic coupling in (Ga,Mn)As.

Multiscale morphology of organic semiconductor thin films controls the adhesion and viability of human neural cells.

We investigate how multiscale morphology of functional thin films affects the in vitro behavior of human neural astrocytoma 1321N1 cells. Pentacene thin film morphology is precisely controlled by means of the film thickness, Theta (here expressed in monolayers (ML)). Fluorescence and atomic force microscopy allow us to correlate the shape, adhesion, and proliferation of cells to the morphological properties of pentacene films controlled by saturated roughness, sigma, correlation length, xi, and fractal dimension, d(f). At early incubation times, cell adhesion exhibits a transition from higher to lower values at Theta approximately 10 ML. This is explained using a model of conformal adhesion of the cell membrane onto the growing pentacene islands. From the model fitting of the data, we show that the cell explores the surface with a deformation of the membrane whose minimum curvature radius is 90 (+/- 45) nm. The transition in the adhesion at approximately 10 ML arises from the saturation of xi accompanied by the monotonic increase of sigma, which leads to a progressive decrease of the pentacene local radius of curvature and hence to the surface area accessible to the cell. Cell proliferation is also enhanced for Theta < 10 ML, and the optimum morphology parameter ranges for cell deployment and growth are sigma 500 nm, and d(f) > 2.45. The characteristic time of cell proliferation is tau approximately 10 +/- 2 h.

Following adsorption kinetics at electrolyte/metal interfaces through crystal truncation scattering: sulfur on Au(111).

Combining electrochemical methods, in situ scanning tunneling microscopy, and surface x-ray diffraction allowed study of the structure and kinetics of S/Au(111) electrodes in aqueous electrolytes under potential control. Integrated intensities of a particular crystal truncation rod at anti-Bragg conditions were used to trace the sulfur adsorption and desorption as a function of electrode potential in real time. The S desorption is a first order process and the adsorption follows a Langmuir isotherm. A weakly bound S layer is found on the surface before charge transfer, and then specific adsorption occurs.