Photonic online learning: a perspective.

Emerging neuromorphic hardware promises to solve certain problems faster and with higher energy efficiency than traditional computing by using physical processes that take place at the device level as the computational primitives in neural networks. While initial results in photonic neuromorphic hardware are very promising, such hardware requires programming or "training" that is often power-hungry and time-consuming. In this article, we examine the online learning paradigm, where the machinery for training is built deeply into the hardware itself. We argue that some form of online learning will be necessary if photonic neuromorphic hardware is to achieve its true potential.

Layer-Skipping Connections Improve the Effectiveness of Equilibrium Propagation on Layered Networks.

Equilibrium propagation is a learning framework that marks a step forward in the search for a biologically-plausible implementation of deep learning, and could be implemented efficiently in neuromorphic hardware. Previous applications of this framework to layered networks encountered a vanishing gradient problem that has not yet been solved in a simple, biologically-plausible way. In this paper, we demonstrate that the vanishing gradient problem can be mitigated by replacing some of a layered network's connections with random layer-skipping connections in a manner inspired by small-world networks. This approach would be convenient to implement in neuromorphic hardware, and is biologically-plausible.

Optimization of photoluminescence from W centers in a silicon-on-insulator.

W centers are trigonal defects generated by self-ion implantation in silicon that exhibit photoluminescence at 1.218 µm. We have shown previously that they can be used in waveguide-integrated all-silicon light-emitting diodes (LEDs). Here we optimize the implant energy, fluence and anneal conditions to maximize the photoluminescence intensity for W centers implanted in silicon-on-insulator, a substrate suitable for waveguide-integrated devices. After optimization, we observe near two orders of magnitude improvement in photoluminescence intensity relative to the conditions with the stopping range of the implanted ions at the center of the silicon device layer. The previously demonstrated waveguide-integrated LED used implant conditions with the stopping range at the center of this layer. We further show that such light sources can be manufactured at the 300-mm scale by demonstrating photoluminescence of similar intensity from 300 mm silicon-on-insulator wafers. The luminescence uniformity across the entire wafer is within the measurement error.

Room-temperature-deposited dielectrics and superconductors for integrated photonics.

We present an approach to fabrication and packaging of integrated photonic devices that utilizes waveguide and detector layers deposited at near-ambient temperature. All lithography is performed with a 365 nm i-line stepper, facilitating low cost and high scalability. We have shown low-loss SiN waveguides, high-Q ring resonators, critically coupled ring resonators, 50/50 beam splitters, Mach-Zehnder interferometers (MZIs) and a process-agnostic fiber packaging scheme. We have further explored the utility of this process for applications in nonlinear optics and quantum photonics. We demonstrate spectral tailoring and octave-spanning supercontinuum generation as well as the integration of superconducting nanowire single photon detectors with MZIs and channel-dropping filters. The packaging approach is suitable for operation up to 160 °C as well as below 1 K. The process is well suited for augmentation of existing foundry capabilities or as a stand-alone process.

All-silicon light-emitting diodes waveguide-integrated with superconducting single-photon detectors.

We demonstrate cryogenic, electrically injected, waveguide-coupled Si light-emitting diodes (LEDs) operating at 1.22 µm. The active region of the LED consists of W centers implanted in the intrinsic region of a p-i-n diode. The LEDs are integrated on waveguides with superconducting nanowire single-photon detectors (SNSPDs). We demonstrate the scalability of this platform with an LED coupled to eleven SNSPDs in a single integrated photonic device.

Direct Bandgap Light Emission from Strained Germanium Nanowires Coupled with High-Q Nanophotonic Cavities.

A silicon-compatible light source is the final missing piece for completing high-speed, low-power on-chip optical interconnects. In this paper, we present a germanium nanowire light emitter that encompasses all the aspects of potential low-threshold lasers: highly strained germanium gain medium, strain-induced pseudoheterostructure, and high-Q nanophotonic cavity. Our nanowire structure presents greatly enhanced photoluminescence into cavity modes with measured quality factors of up to 2000. By varying the dimensions of the germanium nanowire, we tune the emission wavelength over more than 400 nm with a single lithography step. We find reduced optical loss in optical cavities formed with germanium under high (>2.3%) tensile strain. Our compact, high-strain cavities open up new possibilities for low-threshold germanium-based lasers for on-chip optical interconnects.

Monolayer semiconductor nanocavity lasers with ultralow thresholds.

Engineering the electromagnetic environment of a nanometre-scale light emitter by use of a photonic cavity can significantly enhance its spontaneous emission rate, through cavity quantum electrodynamics in the Purcell regime. This effect can greatly reduce the lasing threshold of the emitter, providing a low-threshold laser system with small footprint, low power consumption and ultrafast modulation. An ultralow-threshold nanoscale laser has been successfully developed by embedding quantum dots into a photonic crystal cavity (PCC). However, several challenges impede the practical application of this architecture, including the random positions and compositional fluctuations of the dots, extreme difficulty in current injection, and lack of compatibility with electronic circuits. Here we report a new lasing strategy: an atomically thin crystalline semiconductor--that is, a tungsten diselenide monolayer--is non-destructively and deterministically introduced as a gain medium at the surface of a pre-fabricated PCC. A continuous-wave nanolaser operating in the visible regime is thereby achieved with an optical pumping threshold as low as 27 nanowatts at 130 kelvin, similar to the value achieved in quantum-dot PCC lasers. The key to the lasing action lies in the monolayer nature of the gain medium, which confines direct-gap excitons to within one nanometre of the PCC surface. The surface-gain geometry gives unprecedented accessibility and hence the ability to tailor gain properties via external controls such as electrostatic gating and current injection, enabling electrically pumped operation. Our scheme is scalable and compatible with integrated photonics for on-chip optical communication technologies.

Nonlinear frequency conversion using high-quality modes in GaAs nanobeam cavities.

We demonstrate the design, fabrication, and characterization of nanobeam photonic crystal cavities in (111)-GaAs with multiple high-Q modes, with large frequency separations (up to 740 nm in experiment, i.e., a factor of 1.5 and up to an octave in theory). Such structures are crucial for efficient implementation of nonlinear frequency conversion. Here, we employ them to demonstrate sum-frequency generation from 1300 and 1950 nm to 780 nm. These wavelengths are particularly interesting for quantum frequency conversion between Si vacancy centers in diamond and the fiber-optic network.

Multimode nanobeam cavities for nonlinear optics: high quality resonances separated by an octave.

We demonstrate the design, fabrication and characterization of nanobeam cavities with multiple higher order modes. Designs with two high Q modes with frequency separations of an octave are introduced, and we fabricate such cavities exhibiting resonances with wavelength separations of up to 740 nm.

Photonic crystal cavities in cubic (3C) polytype silicon carbide films.

We present the design, fabrication, and characterization of high quality factor (Q ~10(3)) and small mode volume (V ~0.75 (λ/n)(3)) planar photonic crystal cavities from cubic (3C) thin films (thickness ~200 nm) of silicon carbide (SiC) grown epitaxially on a silicon substrate. We demonstrate cavity resonances across the telecommunications band, with wavelengths from 1.25 - 1.6 µm. Finally, we discuss possible applications in nonlinear optics, optical interconnects, and quantum information science.

Engineered quantum dot single-photon sources.

Fast, high efficiency and low error single-photon sources are required for the implementation of a number of quantum information processing applications. The fastest triggered single-photon sources to date have been demonstrated using epitaxially grown semiconductor quantum dots (QDs), which can be conveniently integrated with optical microcavities. Recent advances in QD technology, including demonstrations of high temperature and telecommunications wavelength single-photon emission, have made QD single-photon sources more practical. Here we discuss the applications of single-photon sources and their various requirements, before reviewing the progress made on a QD platform in meeting these requirements.

Multiply resonant photonic crystal nanocavities for nonlinear frequency conversion.

We describe a photonic crystal nanocavity with multiple spatially overlapping resonances that can serve as a platform for nonlinear frequency conversion. We show nonlinear characterization of structures with two resonances nearly degenerate in frequency. We also demonstrate structures with resonances separated by up to 523 nm.