Secure polarization-independent subcarrier quantum key distribution in optical fiber channel using BB84 protocol with a strong reference.

A quantum key distribution system based on the subcarrier wave modulation method has been demonstrated which employs the BB84 protocol with a strong reference to generate secure bits at a rate of 16.5 kbit/s with an error of 0.5% over an optical channel of 10 dB loss, and 18 bits/s with an error of 0.75% over 25 dB of channel loss. To the best of our knowledge, these results represent the highest channel loss reported for secure quantum key distribution using the subcarrier wave approach. A passive unidirectional scheme has been used to compensate for the polarization dependence of the phase modulators in the receiver module, which resulted in a high visibility of 98.8%. The system is thus fully insensitive to polarization fluctuations and robust to environmental changes, making the approach promising for use in optical telecommunication networks. Further improvements in secure key rate and transmission distance can be achieved by implementing the decoy states protocol or by optimizing the mean photon number used in line with experimental parameters.

Imaging high-dimensional spatial entanglement with a camera.

The light produced by parametric down-conversion shows strong spatial entanglement that leads to violations of EPR criteria for separability. Historically, such studies have been performed by scanning a single-element, single-photon detector across a detection plane. Here we show that modern electron-multiplying charge-coupled device cameras can measure correlations in both position and momentum across a multi-pixel field of view. This capability allows us to observe entanglement of around 2,500 spatial states and demonstrate Einstein-Podolsky-Rosen type correlations by more than two orders of magnitude. More generally, our work shows that cameras can lead to important new capabilities in quantum optics and quantum information science.

Picosecond time-resolved photoluminescence at detection wavelengths greater than 1500 nm.

We report what is to our knowledge the first application of high-efficiency InGaAs/InP photon-counting diode detectors in time-resolved photoluminescence measurements at wavelength greater than 1500 nm. When they were cooled to 77 K and used in conjunction with the time-correlated single-photon counting technique, the detectors were capable of an instrumental response of 230 ps and a noise equivalent power of 2x10(-17)W Hz(-1/2) . Preliminary measurement of a semiconductor heterostructure indicates sensitivity at photogenerated carrier densities as low as 10(14)cm (-3) . This development facilitates the detailed characterization of dominant recombination mechanisms in semiconductor optoelectronic materials and devices designed to operate in the third telecommunications spectral window.

Performance and design of InGaAs /InP photodiodes for single-photon counting at 1.55 microm.

The performance of selected, commercially available InGaAs/InP avalanche photodiodes operating in a photon-counting mode at an incident wavelength of 1.55 microm is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented.

Optoelectronic Systems Based on InGaAs- Complementary-Metal-Oxide-Semiconductor Smart-Pixel Arrays and Free-Space Optical Interconnects.

Free-space optical interconnects have been identified as a potentially important technology for future massively parallel-computing systems. The development of optoelectronic smart pixels based on InGaAs/AlGaAs multiple-quantum-well modulators and detectors flip-chip solder-bump bonded onto complementary-metal-oxide-semiconductor (CMOS) circuits and the design and construction of an experimental processor in which the devices are linked by free-space optical interconnects are described. For demonstrating the capabilities of the technology, a parallel data-sorting system has been identified as an effective demonstrator. By use of Batcher's bitonic sorting algorithm and exploitation of a perfect-shuffle optical interconnection, the system has the potential to perform a full sort on 1024, 16-bit words in less than 16 mus. We describe the design, testing, and characterization of the smart-pixel devices and free-space optical components. InGaAs-CMOS smart-pixel, chip-to-chip communication has been demonstrated at 50 Mbits/s. It is shown that the initial system specifications can be met by the component technologies.

Time-of-Flight Optical Ranging System Based on Time-Correlated Single-Photon Counting.

The design and implementation of a prototype time-of-flight optical ranging system based on the time-correlated single-photon-counting technique are described. The sensor is characterized in terms of its longitudinal and transverse spatial resolution, single-point measurement time, and long-term stability. The system has been operated at stand-off distances of 0.5-5 m, has a depth repeatability of <30 mum, and has a lateral spatial resolution of <500 mum.

Laser depth measurement based on time-correlated single-photon counting.

A method for acquiring range data based on time-correlated single-photon counting is described. This method uses a short-pulse ( approximately 10-ps) laser diode, a detector based on a silicon single-photon avalanche diode, and standard photon-counting timing electronics. The accuracy of the technique has been measured as approximately +/-30 microm in a laboratory experiment and corresponds closely to the results of a theoretical simulation.

Time-resolved photoluminescence measurements of InGaAs/ InP multiple-quantum-well structures at 1.3-µm wavelengths by use of germanium single-photon avalanche photodiodes.

A commercially available germanium avalanche photodiode operating in the single-photon-counting mode has been used to perform time-resolved photoluminescence measurements on InGaAs/lnP multiple-quantum-well structures. Photoluminescence in the spectral region of 1.3-1.48 µm was detected with picosecond timing accuracy by use of the time-correlated single-photon counting technique. The carrier dynamics were monitored for excess photogenerated carrier densities in the range 10(18)-10(15) cm(-3). The recombination time is compared for similar InGaAs-based quantum-well structures grown by use of different epitaxial processes.

Components for the implementation of free-space optical crossbars.

We describe an optical system developed to form the basis of a 64 × 64 free-space optical matrix-matrix crossbar switch. The design and performance of each of the main optical components is discussed: lenses, diffractive optical elements, and polarizing beamsplitters, together with the optomechanical hardware design. For these components, throughput levels of -6.9 dB have been achieved, which is compatible with full system operation at 10(-12) bit error rates at ≥270 Mbits s(-1).

Improved method for determining the optical constants of thin films and its application to molecular-beam-deposited polycrystalline layers.

Polycrystalline, dielectric thin films are grown by the ultrahigh vacuum technique of molecular-beam deposition. A method of calculating the optical constants of such weakly absorbing, homogeneous layers from spectral transmission information alone, with no prior knowledge of their characteristics, is presented. Initially, the procedure uses transmission turning-point data to estimate refractive index and thickness by an analytical approach. These data are then fitted to a function that undergoes an iterative refinement routine by means of a weighted figure of merit to determine with good accuracy the film parameters as functions of wavelength. In this way the optimum conditions for the deposition of materials such as ZnS, ZnSe, LiF, CaF(2), and BaF(2) are found.

Irradiation-induced switch power drift in optically bistable nonlinear interference filters at 514 and 830 nm.

Light-induced changes in the switch power of optically bistable ZnSe nonlinear interference filters have been studied experimentally at 514 and 830 nm wavelengths. This drift was found to be mainly caused by an irreversible change in the peak wavelength and transmission of the filter and is associated with high internal operating irradiances. These changes are apparently due to photostructural modifications of the material forming the central spacer layer. The drift was shown to be dependent on the spacer thickness, incident spot size and the deposition technique used to grow the filter structures. The rate of switch power drift was also found to be reduced considerably when using an illuminating wavelength well removed from the band edge of the spacer material, e.g., 830 nm.

All-optical programmable logic gate.

Experimental results are presented showing all-optical programmability and operation of a multifunction Boolean logic gate. All eight symmetric two-input logic functions have been demonstrated. Comments on the practical implementation and usage of this gate within an optical circuit are made.