1.
Adv Mater
; 28(48): 10750-10756, 2016 Dec.
Artigo
em Inglês
| MEDLINE
| ID: mdl-27723127
RESUMO
A novel approach to on-demand improvement of electronic properties in complex-oxide ferroelectrics is demonstrated whereby ion bombardment - commonly used in classic semiconductor materials - is applied to the PbTiO3 system. The result is deterministic reduction in leakage currents by 5 orders of magnitude, improved ferroelectric switching, and unprecedented insights into the nature of defects and intergap state evolution in these materials.