Local Heat Dissipation and Elasticity of Suspended Silicon Nanowires Revealed by Dual Scanning Electron and Thermal Microscopies.

A novel combined setup, with a scanning thermal microscope (SThM) embedded in a scanning electron microscope (SEM), is used to characterize a suspended silicon rough nanowire (NW), which is epitaxially clamped at both sides and therefore monolithically integrated in a microfabricated device. The rough nature of the NW surface, which prohibits vacuum-SThM due to loose contact for heat dissipation, is circumvented by decorating the NW with periodic platinum dots. Reproducible approaches over these dots, enabled by the live feedback image provided by the SEM, yield a strong improvement in thermal contact resistance and a higher accuracy in its estimation. The results-thermal resistance at the tip-sample contact of 188±3.7K µW-1 and thermal conductivity of the NW of 13.7±1.6W m-1 K-1-are obtained by performing a series of approach curves on the dots. Noteworthy, the technique allows measuring elastic properties at the same time-the moment of inertia of the NW is found to be (6.1±1.0) × 10-30m4-which permits to correlate the respective effects of the rough shell on heat dissipation and on the NW stiffness. The work highlights the capabilities of the dual SThM/SEM instrument, in particular the interest of systematic approach curves with well-positioned and monitored tip motion.

Near-Field Thermophotovoltaic Conversion with High Electrical Power Density and Cell Efficiency above 14.

A huge amount of thermal energy is available close to material surfaces in radiative and nonradiative states, which can be useful for matter characterization or energy harvesting. Even though a full class of novel nanoengineered devices has been predicted over the last two decades for exploiting near-field thermal photons, efficient near-field thermophotovoltaic conversion could not be achieved experimentally until now. Here, we realize a proof of principle by using a micrometer-sized indium antimonide photovoltaic cell cooled at 77 K and approached at nanometer distances from a hot (∼730 K) graphite microsphere emitter. We demonstrate a near-field power conversion efficiency of the cell above 14% and unprecedented electrical power density outputs (0.75 W cm-2), which are orders of magnitude larger than all previous attempts. These results highlight that near-field thermophotovoltaic converters are now competing with other thermal-to-electrical conversion devices and also pave the way for efficient photoelectric detection of near-field thermal photons.

Radiative heat transfer at the nanoscale: experimental trends and challenges.

Energy transport theories are being revisited at the nanoscale, as macroscopic laws known for a century are broken at dimensions smaller than those associated with energy carriers. For thermal radiation, where the typical dimension is provided by Wien's wavelength, Planck's law and associated concepts describing surface-to-surface radiative transfer have to be replaced by a full electromagnetic framework capturing near-field radiative heat transfer (photon tunnelling between close bodies), interference effects and sub-wavelength thermal emission (emitting body of small size). It is only during the last decade that nanotechnology has allowed for many experimental verifications - with a recent boom - of the large increase of radiative heat transfer at the nanoscale. In this minireview, we highlight the parameter space that has been investigated until now, showing that it is limited in terms of inter-body distance, temperature and object size, and provide clues about possible thermal-energy harvesting, sensing and management applications. We also provide an outlook on open topics, underlining some difficulties in applying single-wavelength approaches to broadband thermal emitters while acknowledging the promise of thermal nanophotonics and observing that molecular/chemical viewpoints have been hardly addressed.

Micron-sized liquid nitrogen-cooled indium antimonide photovoltaic cell for near-field thermophotovoltaics.

Simulations of near-field thermophotovoltaic devices predict promising performance, but experimental observations remain challenging. Having the lowest bandgap among III-V semiconductors, indium antimonide (InSb) is an attractive choice for the photovoltaic cell, provided it is cooled to a low temperature, typically around 77 K. Here, by taking into account fabrication and operating constraints, radiation transfer and low-injection charge transport simulations are made to find the optimum architecture for the photovoltaic cell. Appropriate optical and electrical properties of indium antimonide are used. In particular, impact of the Moss-Burstein effects on the interband absorption coefficient of n-type degenerate layers, and of parasitic sub-bandgap absorption by the free carriers and phonons are accounted for. Micron-sized cells are required to minimize the huge issue of the lateral series resistance losses. The proposed methodology is presumably relevant for making realistic designs of near-field thermophotovoltaic devices based on low-bandgap III-V semiconductors.

Spectrally shaping high-temperature radiators for thermophotovoltaics using Mo-HfO2 trilayer-on-substrate structures.

Easy-to-fabricate, high-temperature, thermally-stable radiators are critical elements for developing efficient and sustainable thermophotovoltaic energy conversion devices. In this frame, a trilayer-on-substrate structure is selected. It is composed of a refractory metal -molybdenum - constituting the substrate and an intermediate thin film sandwiched between two hafnia transparent layers. An in-depth analysis shows that two spectrally distinct interference regimes take place in the hafnia layer-molybdenum thin film substructure, and that backward and forward thermally-emitted waves by the thin film are selected in two distinct interferential resonating cavities. The interference regimes within and between these cavities are key to the spectral shaping of thermal emission. The radiative performances of the structures are evaluated by introducing a figure of merit. Using the example of a GaSb cell, it is shown that the structure can be optimized for providing the broadband large emission with a steep cutoff required for mitigating photoconversion losses.

High-injection effects in near-field thermophotovoltaic devices.

In near-field thermophotovoltaics, a substantial enhancement of the electrical power output is expected as a result of the larger photogeneration of electron-hole pairs due to the tunneling of evanescent modes from the thermal radiator to the photovoltaic cell. The common low-injection approximation, which considers that the local carrier density due to photogeneration is moderate in comparison to that due to doping, needs therefore to be assessed. By solving the full drift-diffusion equations, the existence of high-injection effects is studied in the case of a GaSb p-on-n junction cell and a radiator supporting surface polaritons. Depending on doping densities and surface recombination velocity, results reveal that high-injection phenomena can already take place in the far field and become very significant in the near field. Impacts of high injection on maximum electrical power, short-circuit current, open-circuit voltage, recombination rates, and variations of the difference between quasi-Fermi levels are analyzed in detail. By showing that an optimum acceptor doping density can be estimated, this work suggests that a detailed and accurate modeling of the electrical transport is also key for the design of near-field thermophotovoltaic devices.

Spectral and total temperature-dependent emissivities of few-layer structures on a metallic substrate.

We investigate the thermal radiative emission of few-layer structures deposited on a metallic substrate and its dependence on temperature with the Fluctuational Electrodynamics approach. We highlight the impact of the variations of the optical properties of metallic layers on their temperature-dependent emissivity. Fabry-Pérot spectral selection involving at most two transparent layers and one thin reflective layer leads to well-defined peaks and to the amplification of the substrate emission. For a single Fabry-Pérot layer on a reflective substrate, an optimal thickness that maximizes the emissivity of the structure can be determined at each temperature. A thin lossy layer deposited on the previous structure can enhance interference phenomena, and the analysis of the participation of each layer to the emission shows that the thin layer is the main source of emission. Eventually, we investigate a system with two Fabry-Pérot layers and a metallic thin layer, and we show that an optimal architecture can be found. The total hemispherical emissivity can be increased by one order of magnitude compared to the substrate emissivity.

Impacts of propagating, frustrated and surface modes on radiative, electrical and thermal losses in nanoscale-gap thermophotovoltaic power generators.

The impacts of radiative, electrical and thermal losses on the performances of nanoscale-gap thermophotovoltaic (nano-TPV) power generators consisting of a gallium antimonide cell paired with a broadband tungsten and a radiatively-optimized Drude radiator are analyzed. Results reveal that surface mode mediated nano-TPV power generation with the Drude radiator outperforms the tungsten radiator, dominated by frustrated modes, only for a vacuum gap thickness of 10 nm and if both electrical and thermal losses are neglected. The key limiting factors for the Drude- and tungsten-based devices are respectively the recombination of electron-hole pairs at the cell surface and thermalization of radiation with energy larger than the cell absorption bandgap. A design guideline is also proposed where a high energy cutoff above which radiation has a net negative effect on nano-TPV power output due to thermal losses is determined. It is shown that the power output of a tungsten-based device increases by 6.5% while the cell temperature decreases by 30 K when applying a high energy cutoff at 1.45 eV. This work demonstrates that design and optimization of nano-TPV devices must account for radiative, electrical and thermal losses.

Blackbody spectrum revisited in the near field.

We report local spectra of the near-field thermal emission recorded by a Fourier transform infrared spectrometer, using a tungsten tip as a local scatterer coupling the near-field thermal emission to the far field. Spectra recorded on silicon carbide and silicon dioxide exhibit temporal coherence due to thermally excited surface waves. Finally, we evaluate the ability of this spectroscopy to probe the frequency dependence of the electromagnetic local density of states.

Phonons in slow motion: dispersion relations in ultrathin Si membranes.

We report the changes in dispersion relations of hypersonic acoustic phonons in free-standing silicon membranes as thin as ∼8 nm. We observe a reduction of the phase and group velocities of the fundamental flexural mode by more than 1 order of magnitude compared to bulk values. The modification of the dispersion relation in nanostructures has important consequences for noise control in nano- and microelectromechanical systems (MEMS/NEMS) as well as opto-mechanical devices.