Recent Advances in Transfer-Free Synthesis of High-Quality Graphene.

High-quality graphene obtained by chemical vapor deposition (CVD) technique holds significant importance in constructing innovative electronic and optoelectronic devices. Direct growth of graphene over target substrates readily eliminates cumbersome transfer processes, offering compatibility with practical application scenarios. Recent years have witnessed growing strategic endeavors in the preparation of transfer-free graphene with favorable quality. Nevertheless, timely review articles on this topic are still scarce. In this contribution, a systematic summary of recent advances in transfer-free synthesis of high-quality graphene on insulating substrates, with a focus on discussing synthetic strategies designed by elevating reaction temperature, confining gas flow, introducing growth promotor and regulating substrate surface is presented.

Transfer-Free Quasi-Suspended Graphene Grown on a Si Wafer.

The direct growth of graphene affording wafer-scale uniformity on insulators is paramount to electronic and optoelectronic applications; however, it remains a challenge to date, because it entails an entirely different growth mode than that over metals. Herein, the metal-catalyst-free growth of quasi-suspended graphene on a Si wafer is demonstrated using an interface-decoupling chemical vapor deposition strategy. The employment of lower-than-conventional H2 dosage and concurrent introduction of methanol during growth can effectively weaken the interaction between the synthesized graphene and the underlying substrate. The growth mode can be thus fine-tuned, producing a predominantly monolayer graphene film with wafer-level homogeneity. Graphene thus grown on a 4 inch Si wafer enables the transfer-free fabrication of high-performance graphene-based field-effect transistor arrays that exhibit almost no shift in the charge neutral point, indicating a quasi-suspended feature of the graphene. Moreover, a carrier mobility up to 15 000 cm2 V-1 s-1 can be attained. This study is anticipated to offer meaningful insights into the synthesis of wafer-scale high-quality graphene on dielectrics for practical graphene devices.

Copper acetate-facilitated transfer-free growth of high-quality graphene for hydrovoltaic generators.

Direct synthesis of high-quality graphene on dielectric substrates without a transfer process is of vital importance for a variety of applications. Current strategies for boosting high-quality graphene growth, such as remote metal catalyzation, are limited by poor performance with respect to the release of metal catalysts and hence suffer from a problem with metal residues. Herein, we report an effective approach that utilizes a metal-containing species, copper acetate, to continuously supply copper clusters in a gaseous form to aid transfer-free growth of graphene over a wafer scale. The thus-derived graphene films were found to show reduced multilayer density and improved electrical performance and exhibited a carrier mobility of 8500 cm2 V-1 s-1. Furthermore, droplet-based hydrovoltaic electricity generator devices based on directly grown graphene were found to exhibit robust voltage output and long cyclic stability, in stark contrast to their counterparts based on transferred graphene, demonstrating the potential for emerging energy harvesting applications. The work presented here offers a promising solution to organize the metal catalytic booster toward transfer-free synthesis of high-quality graphene and enable smart energy generation.

Direct-Chemical Vapor Deposition-Enabled Graphene for Emerging Energy Storage: Versatility, Essentiality, and Possibility.

The direct chemical vapor deposition (CVD) technique has stimulated an enormous scientific and industrial interest to enable the conformal growth of graphene over multifarious substrates, which readily bypasses tedious transfer procedure and empowers innovative materials paradigm. Compared to the prevailing graphene materials (i.e., reduced graphene oxide and liquid-phase exfoliated graphene), the direct-CVD-enabled graphene harnesses appealing structural advantages and physicochemical properties, accordingly playing a pivotal role in the realm of electrochemical energy storage. Despite conspicuous progress achieved in this frontier, a comprehensive overview is still lacking by far and the synthesis-structure-property-application nexus of direct-CVD-enabled graphene remains elusive. In this topical review, rather than simply compiling the state-of-the-art advancements, the versatile roles of direct-CVD-enabled graphene are itemized as (i) modificator, (ii) cultivator, (iii) defender, and (iv) decider. Furthermore, essential effects on the performance optimization are elucidated, with an emphasis on fundamental properties and underlying mechanisms. At the end, perspectives with respect to the material production and device fabrication are sketched, aiming to navigate the future development of direct-CVD-enabled graphene en-route toward pragmatic energy applications and beyond.

High-Performance 3D Vertically Oriented Graphene Photodetector Using a Floating Indium Tin Oxide Channel.

Vertically oriented graphene (VG), owing to its sharp edges, non-stacking morphology, and high surface-to-volume ratio structure, is promising as a consummate material for the application of photoelectric detection. However, owing to high defect and fast photocarrier recombination, VG-absorption-based detectors inherently suffer from poor responsivity, severely limiting their viability for light detection. Herein, we report a high-performance photodetector based on a VG/indium tin oxide (ITO) composite structure, where the VG layer serves as the light absorption layer while ITO works as the carrier conduction channel, thus achieving the broadband and high response nature of a photodetector. Under the illumination of infrared light, photoinduced carriers generated in VG could transfer to the floating ITO layer, which makes them separate and diffuse to electrodes quickly, finally realizing large photocurrent detectivity. This kind of composite structure photodetector possesses a room temperature photoresponsivity as high as ~0.7 A/W at a wavelength of 980 nm, and it still maintains an acceptable performance at temperatures as low as 87 K. In addition, a response time of 5.8 s is observed, ~10 s faster than VG photodetectors. Owing to the unique three-dimensional morphology structure of the as-prepared VG, the photoresponsivity of the VG/ITO composite photodetector also presented selectivity of incidence angles. These findings demonstrate that our novel composite structure VG device is attractive and promising in highly sensitive, fast, and broadband photodetection technology.

Freestanding Graphene Fabric Film for Flexible Infrared Camouflage.

Graphene films, fabricated by chemical vapor deposition (CVD) method, have exhibited superiorities in high crystallinity, thickness controllability, and large-scale uniformity. However, most synthesized graphene films are substrate-dependent, and usually fragile for practical application. Herein, a freestanding graphene film is prepared based on the CVD route. By using the etchable fabric substrate, a large-scale papyraceous freestanding graphene fabric film (FS-GFF) is obtained. The electrical conductivity of FS-GFF can be modulated from 50 to 2800 Ω sq-1 by tailoring the graphene layer thickness. Moreover, the FS-GFF can be further attached to various shaped objects by a simple rewetting manipulation with negligible changes of electric conductivity. Based on the advanced fabric structure, excellent electrical property, and high infrared emissivity, the FS-GFF is thus assembled into a flexible device with tunable infrared emissivity, which can achieve the adaptive camouflage ability in complicated backgrounds. This work provides an infusive insight into the fabrication of large-scale freestanding graphene fabric films, while promoting the exploration on the flexible infrared camouflage textiles.

Identifying the Evolution of Selenium-Vacancy-Modulated MoSe2 Precatalyst in Lithium-Sulfur Chemistry.

Witnessing compositional evolution and identifying the catalytically active moiety of electrocatalysts is of paramount importance in Li-S chemistry. Nevertheless, this field remains elusive. We report the scalable salt-templated synthesis of Se-vacancy-incorporated MoSe2 architecture (SeVs-MoSe2 ) and reveal the phase evolution of the defective precatalyst in working Li-S batteries. The interaction between lithium polysulfides and SeVs-MoSe2 is probed to induce the transformation from SeVs-MoSe2 to MoSeS. Furthermore, operando Raman spectroscopy and ex situ X-ray diffraction measurements in combination with theoretical simulations verify that the effectual MoSeS catalyst could help promote conversion of Li2 S2 to Li2 S, thereby boosting the capacity performance. The Li-S battery accordingly exhibits a satisfactory rate and cycling capability even with and elevated sulfur loading and lean electrolyte conditions (7.67 mg cm-2 ; 4.0 µL mg-1 S ). This work elucidates the design strategies and catalytic mechanisms of efficient electrocatalysts bearing defects.

Defective VSe2-Graphene Heterostructures Enabling In Situ Electrocatalyst Evolution for Lithium-Sulfur Batteries.

Electrocatalysts remain vitally important for the rational management of intermediate polysulfides (LiPSs) in the realm of Li-S batteries. In terms of transition-metal-based candidates, in situ evolution of electrocatalysts in the course of an electrochemical process has been acknowledged; nevertheless, consensus has not yet been reached on their real functional states as well as catalytic mechanisms. Herein, we report an all-chemical vapor deposition design of the defective vanadium diselenide (VSe2)-vertical graphene (VG) heterostructure on carbon cloth (CC) targeting a high-performance sulfur host. The electrochemistry induces the sulfurization of VSe2 to VS2 at Se vacancy sites, which propels the adsorption and conversion of LiPSs. Accordingly, the VSe2-VG@CC/S electrode harvests an excellent cycling stability at 5.0 C with a capacity decay of only 0.039% per cycle over 800 cycles, accompanied by a high areal capacity of 4.9 mAh cm-2 under an elevated sulfur loading of 9.6 mg cm-2. Theoretical simulation combined with operando characterizations reveals the key role played by the Se vacancy with respect to the electrocatalyst evolution and LiPS regulation. This work offers insight into the rational design of heterostructure sulfur hosts throughout defect engineering.

Superclean Growth of Graphene Using a Cold-Wall Chemical Vapor Deposition Approach.

Chemical vapor deposition (CVD) has become a promising approach for the industrial production of graphene films with appealing controllability and uniformity. However, in the conventional hot-wall CVD system, CVD-derived graphene films suffer from surface contamination originating from the gas-phase reaction during the high-temperature growth. Shown here is that the cold-wall CVD system is capable of suppressing the gas-phase reaction, and achieves the superclean growth of graphene films in a controllable manner. The as-received superclean graphene film, exhibiting improved optical and electrical properties, was proven to be an ideal candidate material used as transparent electrodes and substrate for epitaxial growth. This study provides a new promising choice for industrial production of high-quality graphene films, and the finding about the engineering of the gas-phase reaction, which is usually overlooked, will be instructive for future research on CVD growth of graphene.

Quantitative Analyses of the Interfacial Properties of Current Collectors at the Mesoscopic Level in Lithium Ion Batteries by Using Hierarchical Graphene.

At the mesoscopic level of commercial lithium ion battery (LIB), it is widely believed that the poor contacts between current collector (CC) and electrode materials (EM) lead to weak adhesions and large interfacial electric resistances. However, systematic quantitative analyses of the influence of the interfacial properties of CC are still scarce. Here, we built a model interface between CC and electrode materials by directly growing hierarchical graphene films on commercial Al foil CC, and we performed systematic quantitative studies of the interfacial properties therein. Our results show that the interfacial electric resistance dominates, i.e. ∼2 orders of magnitude higher than that of electrode materials. The interfacial resistance could be eliminated by hierarchical graphene interlayer. Cathode on CC with eliminated interfacial resistance could deliver much improved power density outputs. Our work quantifies the mesoscopic factors influencing the battery performance and offers practical guidelines of boosting the performance of LIBs and beyond.

Enhancement of Heat Dissipation in Ultraviolet Light-Emitting Diodes by a Vertically Oriented Graphene Nanowall Buffer Layer.

For III-nitride-based devices, such as high-brightness light-emitting diodes (LEDs), the poor heat dissipation of the sapphire substrate is deleterious to the energy efficiency and restricts many of their applications. Herein, the role of vertically oriented graphene (VG) nanowalls as a buffer layer for improving the heat dissipation in AlN films on sapphire substrates is studied. It is found that VG nanowalls can effectively enhance the heat dissipation between an AlN film and a sapphire substrate in the longitudinal direction because of their unique vertical structure and good thermal conductivity. Thus, an LED fabricated on a VG-sapphire substrate shows a 37% improved light output power under a high injection current (350 mA) with an effective 3.8% temperature reduction. Moreover, the introduction of VG nanowalls does not degrade the quality of the AlN film, but instead promotes AlN nucleation and significantly reduces the epilayer strain that is generated during the cooling process. These findings suggest that the VG nanowalls can be a good buffer layer candidate in III-nitride semiconductor devices, especially for improving the heat dissipation in high-brightness LEDs.

Transparent Electrothermal Heaters Based on Vertically-Oriented Graphene Glass Hybrid Materials.

Transparent heating devices are widely used in daily life-related applications that can be achieved by various heating materials with suitable resistances. Herein, high-performance vertically-oriented graphene (VG) films are directly grown on soda-lime glass by a radio-frequency (rf) plasma-enhanced chemical vapor deposition (PECVD) method, giving reasonable resistances for electrothermal heating. The optical and electrical properties of VG films are found to be tunable by optimizing the growth parameters such as growth time, carrier gas flow, etc. The electrothermal performances of the derived materials with different resistances are thus studied systematically. Specifically, the VG film on glass with a transmittance of ~73% at 550 nm and a sheet resistance of ~3.9 KΩ/□ is fabricated into a heating device, presenting a saturated temperature up to 55 °C by applying 80 V for 3 min. The VG film on the glass at a transmittance of ~43% and a sheet resistance of 0.76 KΩ/□ exhibits a highly steady temperature increase up to ~108 °C with a maximum heating rate of ~2.6 °C/s under a voltage of 60 V. Briefly, the tunable sheet resistance, good adhesion of VG to the growth substrate, relative high heating efficiency, and large heating temperature range make VG films on glass decent candidates for electrothermal related applications in defrosting and defogging devices.

Improved Epitaxy of AlN Film for Deep-Ultraviolet Light-Emitting Diodes Enabled by Graphene.

The growth of single-crystal III-nitride films with a low stress and dislocation density is crucial for the semiconductor industry. In particular, AlN-derived deep-ultraviolet light-emitting diodes (DUV-LEDs) have important applications in microelectronic technologies and environmental sciences but are still limited by large lattice and thermal mismatches between the epilayer and substrate. Here, the quasi-van der Waals epitaxial (QvdWE) growth of high-quality AlN films on graphene/sapphire substrates is reported and their application in high-performance DUV-LEDs is demonstrated. Guided by density functional theory calculations, it is found that pyrrolic nitrogen in graphene introduced by a plasma treatment greatly facilitates the AlN nucleation and enables fast growth of a mirror-smooth single-crystal film in a very short time of ≈0.5 h (≈50% decrease compared with the conventional process), thus leading to a largely reduced cost. Additionally, graphene effectively releases the biaxial stress (0.11 GPa) and reduces the dislocation density in the epilayer. The as-fabricated DUV-LED shows a low turn-on voltage, good reliability, and high output power. This study may provide a revolutionary technology for the epitaxial growth of AlN films and provide opportunities for scalable applications of graphene films.

Fast Growth of Strain-Free AlN on Graphene-Buffered Sapphire.

We study the roles of graphene acting as a buffer layer for growth of an AlN film on a sapphire substrate. Graphene can reduce the density of AlN nuclei but increase the growth rate for an individual nucleus at the initial growth stage. This can lead to the reduction of threading dislocations evolved at the coalescence boundaries. The graphene interlayer also weakens the interaction between AlN and sapphire and accommodates their large mismatch in the lattice and thermal expansion coefficients; thus, the compressive strain in AlN and the tensile strain in sapphire are largely relaxed. The effective relaxation of strain further leads to a low density of defects in the AlN films. These findings reveal the roles of graphene in III-nitride growth and offer valuable insights into the efficient applications of graphene in the light-emitting diode industry.

High-Brightness Blue Light-Emitting Diodes Enabled by a Directly Grown Graphene Buffer Layer.

Single-crystalline GaN-based light-emitting diodes (LEDs) with high efficiency and long lifetime are the most promising solid-state lighting source compared with conventional incandescent and fluorescent lamps. However, the lattice and thermal mismatch between GaN and sapphire substrate always induces high stress and high density of dislocations and thus degrades the performance of LEDs. Here, the growth of high-quality GaN with low stress and a low density of dislocations on graphene (Gr) buffered sapphire substrate is reported for high-brightness blue LEDs. Gr films are directly grown on sapphire substrate to avoid the tedious transfer process and GaN is grown by metal-organic chemical vapor deposition (MOCVD). The introduced Gr buffer layer greatly releases biaxial stress and reduces the density of dislocations in GaN film and Inx Ga1-x N/GaN multiple quantum well structures. The as-fabricated LED devices therefore deliver much higher light output power compared to that on a bare sapphire substrate, which even outperforms the mature process derived counterpart. The GaN growth on Gr buffered sapphire only requires one-step growth, which largely shortens the MOCVD growth time. This facile strategy may pave a new way for applications of Gr films and bring several disruptive technologies for epitaxial growth of GaN film and its applications in high-brightness LEDs.

Self-assembly facilitated and visible light-driven generation of carbon dots.

Carbon dots (CDs) with an absolute fluorescence quantum yield of 87% are facilely prepared via irradiation of self-assembled terthiophene amphiphile TTC4L in aqueous solution by mild visible light. Visible light irradiation of TTC4L triggers the production of superoxide radicals in water, which oxidize the closely packed terthiophene group into carbon dots. Our results reveal that the molecular self-assembly may act as important precursor for the generation of single molecule-like carbon dots; this method paves the way for the fabrication of CDs of high quality.

Switching Vertical to Horizontal Graphene Growth Using Faraday Cage-Assisted PECVD Approach for High-Performance Transparent Heating Device.

Plasma-enhanced chemical vapor deposition (PECVD) is an applicable route to achieve low-temperature growth of graphene, typically shaped like vertical nanowalls. However, for transparent electronic applications, the rich exposed edges and high specific surface area of vertical graphene (VG) nanowalls can enhance the carrier scattering and light absorption, resulting in high sheet resistance and low transmittance. Thus, the synthesis of laid-down graphene (LG) is imperative. Here, a Faraday cage is designed to switch graphene growth in PECVD from the vertical to the horizontal direction by weakening ion bombardment and shielding electric field. Consequently, laid-down graphene is synthesized on low-softening-point soda-lime glass (6 cm × 10 cm) at ≈580 °C. This is hardly realized through the conventional PECVD or the thermal chemical vapor deposition methods with the necessity of high growth temperature (1000 °C-1600 °C). Laid-down graphene glass has higher transparency, lower sheet resistance, and much improved macroscopic uniformity when compare to its vertical graphene counterpart and it performs better in transparent heating devices. This will inspire the next-generation applications in low-cost transparent electronics.

Graphene-Armored Aluminum Foil with Enhanced Anticorrosion Performance as Current Collectors for Lithium-Ion Battery.

Aluminum (Al) foil, as the most accepted cathode current collector for lithium-ion batteries (LIBs), is susceptible to local anodic corrosions during long-term operations. Such corrosions could lead to the deterioration or even premature failure of the batteries and are generally believed to be a bottleneck for next-generation 5 V LIBs. Here, it is demonstrated that Al foil armored by conformal graphene coating exhibits significantly reinforced anodic corrosion resistance in both LiPF6 and lithium bis(trifluoromethanesulphonyl) imide (LiTFSI) based electrolytes. Moreover, LiMn2 O4 cells using graphene-armored Al foil as current collectors (LMO/GA) demonstrate enhanced electrochemical performance in comparison with those using pristine Al foil (LMO/PA). The long-term discharge capacity retention of LMO/GA cell after ≈950 h straight operations at low rate (0.5 C) reaches up to 91%, remarkably superior to LMO/PA cell (75%). The self-discharge propensity of LMO/GA is clearly relieved and the rate/power performance is also improved with graphene mediations. This work not only contributes to the long-term stable operations of LIBs but also might catalyze the deployment of 5 V LIBs in the future.

Direct Measurement of Single-Molecule DNA Hybridization Dynamics with Single-Base Resolution.

Herein, we report label-free detection of single-molecule DNA hybridization dynamics with single-base resolution. By using an electronic circuit based on point-decorated silicon nanowires as electrical probes, we directly record the folding/unfolding process of individual hairpin DNAs with sufficiently high signal-to-noise ratio and bandwidth. These measurements reveal two-level current oscillations with strong temperature dependence, enabling us to determine the thermodynamic and kinetic properties of hairpin DNA hybridization. More importantly, successive, stepwise increases and decreases in device conductance at low temperature on a microsecond timescale are successfully observed, indicating a base-by-base unfolding/folding process. The process demonstrates a kinetic zipper model for DNA hybridization/dehybridization at the single base-pair level. This measurement capability promises a label-free single-molecule approach to probe biomolecular interactions with fast dynamics.