Efficient Production of Solar Hydrogen Peroxide Using Piezoelectric Polarization and Photoinduced Charge Transfer of Nanopiezoelectrics Sensitized by Carbon Quantum Dots.

Piezoelectric semiconductors have emerged as redox catalysts, and challenges include effective conversion of mechanical energy to piezoelectric polarization and achieving high catalytic activity. The catalytic activity can be enhanced by simultaneous irradiation of ultrasound and light, but the existing piezoelectric semiconductors have trouble absorbing visible light. A piezoelectric catalyst is designed and tested for the generation of hydrogen peroxide (H2 O2 ). It is based on Nb-doped tetragonal BaTiO3 (BaTiO3 :Nb) and is sensitized by carbon quantum dots (CDs). The photosensitizer injects electrons into the conduction band of the semiconductor, while the piezoelectric polarization directed electrons to the semiconductor surface, allowing for a high-rate generation of H2 O2 . The piezoelectric polarization field restricts the recombination of photoinduced electron-hole pairs. A production rate of 1360 µmol gcatalyst -1  h-1  of H2 O2  is achieved under visible light and ultrasound co-irradiation. Individual piezo- and photocatalysis yielded lower production rates. Furthermore, the CDs enhance the piezocatalytic activity of the BaTiO3 :Nb. It is noted that moderating the piezoelectricity of BaTiO3 :Nb via microstructure modulation influences the piezophotocatalytic activity. This work shows a new methodology for synthesizing H2 O2  by using visible light and mechanical energy.

High Performance Generation of H2 O2 under Piezophototronic Effect with Multi-Layer In2 S3 Nanosheets Modified by Spherical ZnS and BaTiO3 Nanopiezoelectrics.

Manipulating the separation and transportation of photoexcited charge carriers in photoresponsive semiconductors via the piezoelectric polarization effect is an emerging strategy in the field of artificial photosynthesis. However, existing semiconductor photocatalysts, both with a wide range absorption for visible light and superior piezoelectricity are very scarce, leading to a low reactivity of photocatalysis. Here, a multi-layer In2 S3 nanosheet modified with spherical ZnS and BaTiO3 nanopiezoelectrics (ZnS/In2 S3 /BTO) is reported, generating approximately 378 µm of H2 O2 in 100 min (and the concentration is still increasing) under co-irradiation of visible light and ultrasound (piezophotocatalysis) in ethanol-water solution; this concentration is higher compared with two phases piezoelectric heterostructures (i.e., ZnS/BTO, In2 S3 /BTO, and ZnS/In2 S3 ) and pure compounds (i.e., ZnS, In2 S3 , and BTO), and also higher than that of independent piezo- (≈254 µm) and photocatalysis (≈120 µm). Moreover, the concentration of H2 O2 generated on ZnS/In2 S3 /BTO can be as high as approximately 1160 µm in 5 h of piezophotoreaction after experiencing six cycles of visible light concurrent with ultrasound irradiation. The enhancement of H2 O2 yield on ZnS/In2 S3 /BTO in piezophotocatalysis can be attributed to the piezopotential-induced internal electric polarization field promoting the separation of photoexcited charge carriers, thus boosting the rate of surface photoreaction.

Computing with DFT Band Offsets at Semiconductor Interfaces: A Comparison of Two Methods.

Two DFT-based methods using hybrid functionals and plane-averaged profiles of the Hartree potential (individual slabs versus vacuum and alternating slabs of both materials), which are frequently used to predict or estimate the offset between bands at interfaces between two semiconductors, are analyzed in the present work. These methods are compared using several very different semiconductor pairs, and the conclusions about the advantages of each method are discussed. Overall, the alternating slabs method is recommended in those cases where epitaxial mismatch does not represent a significant problem.

Atomic-Scale Model and Electronic Structure of Cu2O/CH3NH3PbI3 Interfaces in Perovskite Solar Cells.

Cuprous oxide has been conceived as a potential alternative to traditional organic hole-transport layers in hybrid halide perovskite-based solar cells. Device simulations predict record efficiencies using this semiconductor, but experimental results do not yet show this trend. More detailed knowledge about the Cu2O/perovskite interface is mandatory to improve the photoconversion efficiency. Using density functional theory calculations, here, we study the interfaces of CH3NH3PbI3 with Cu2O to assess their influence on device performance. Several atomistic models of these interfaces are provided for the first time, considering different compositions of the interface atomic planes. The interface electronic properties are discussed on the basis of the optimal theoretical situation, but in connection with the experimental realizations and device simulations. It is shown that the formation of vacancies in the Cu2O terminating planes is essential to eliminate dangling bonds and trap states. The four interface models that fulfill this condition present a band alignment favorable for photovoltaic conversion. Energy of adhesion and charge transfer across the interfaces are also studied. The termination of CH3NH3PbI3 in PbI2 atomic planes seems optimal to maximize the photoconversion efficiency.

Author Correction: Influence of chromium hyperdoping on the electronic structure of CH3NH3PbI3 perovskite: a first-principles insight.

A correction to this article has been published and is linked from the HTML and PDF versions of this paper. The error has been fixed in the paper.

Influence of chromium hyperdoping on the electronic structure of CH3NH3PbI3 perovskite: a first-principles insight.

Organic-inorganic hybrid halide perovskites compounds are emerging as new materials with great potential for efficient solar cells. This paper explores the possibility of increasing their photovoltaic efficiency through sub-bandgap absorption by way of the in gap band (IGB) concept. Thus, we assess the formation of an in gap band as well as its effect on the absorption features of Organic-inorganic hybrid halide perovskites CH3NH3PbI3 (MAPI). For this task, we use density functional theory (DFT) as well as many-body perturbation methods along to spin-orbit coupling (SOC) to study structural, energetic and electronic properties of partially Cr-substituted MAPI perovskites (CH3NH3Pb1-xCrxI3). Our results reveal that Cr replacement does not lead to an important cell distortion, while the energetic of the substitution process evidences the possibility of obtaining Cr-substituted perovskite. The analysis of the electronic structure shows that Cr 3d-orbitals induce new electronic states in the host semiconductor bandgap, which fulfill the requirements to be considered as an IGB. Precise many-body perturbation methods in G0W0 approach provided an accurate description on the electronic structures as well as the position of the IGB. In short, Pb replacement by Cr could be useful for improved absorption features through new sub-bandgap transitions across the in gap band.

Near-ambient XPS characterization of interfacial copper species in ceria-supported copper catalysts.

Catalysts based on combinations of copper and cerium oxides are interesting alternatives to noble metal ones for processes involved in the production/purification of hydrogen produced from hydrocarbons or biomass like the water-gas shift or the preferential oxidation of CO reactions. Active sites for such processes have been proposed to correspond to reduced species formed at the interface between both oxides. The present work provides direct evidence of reduced copper species located at the interface and observed during the course of near-ambient XPS experiments performed over samples of copper oxide supported on ceria nanospheres and nanocubes subjected to interaction with CO at different temperatures. The analysis of XPS results is based on DFT+U calculations employed as a complementary method for the analysis of redox properties of the catalysts and core-level shifts produced upon such redox changes. Differences observed in interfacial redox properties as a function of the ceria support morphology appear to be most useful to explain catalytic properties of this type of system for mentioned processes.

V-doped SnS2: a new intermediate band material for a better use of the solar spectrum.

Intermediate band materials can boost photovoltaic efficiency through an increase in photocurrent without photovoltage degradation thanks to the use of two sub-bandgap photons to achieve a full electronic transition from the valence band to the conduction band of a semiconductor structure. After having reported in previous works several transition metal-substituted semiconductors as able to achieve the electronic structure needed for this scheme, we propose at present carrying out this substitution in sulfides that have bandgaps of around 2.0 eV and containing octahedrally coordinated cations such as In or Sn. Specifically, the electronic structure of layered SnS(2) with Sn partially substituted by vanadium is examined here with first principles quantum methods and seen to give favourable characteristics in this respect. The synthesis of this material in nanocrystalline powder form is then undertaken and achieved using solvothermal chemical methods. The insertion of vanadium in SnS(2) is found to produce an absorption spectrum in the UV-Vis-NIR range that displays a new sub-bandgap feature in agreement with the quantum calculations. A photocatalytic reaction-based test verifies that this sub-bandgap absorption produces highly mobile electrons and holes in the material that may be used for the solar energy conversion, giving experimental support to the quantum calculations predictions.

Energetics of formation of TiGa3As4 and TiGa3P4 intermediate band materials.

Using density functional theory quantum methods, total energy values and vibrational properties have been computed, and thermodynamic properties evaluated, for Ti-substituted GaAs and GaP, proposed as candidates for intermediate band photovoltaic cells. The calculations predict that the formation of these materials from the binary compounds implies an increase in total energy (that is ascribed largely to the change in coordination undergone by Ti, from six-fold to four-fold), and thus phase separation rather than mixed compound formation would be favored. However, the mentioned increase is not larger (for the arsenide case it is actually smaller) than that predicted for Mn-substituted GaAs, a material which has been experimentally made, and therefore the obtention of these Ti-substituted materials is expected to be feasible as well. Vibrational and disorder entropy contributions to the formation free energy of the ternary compounds have been also computed; they compensate partially for the total energy increase, and indicate that the thermodynamic feasibility of the materials synthesis improves for low Ti concentrations and high temperature conditions.

Density functional calculations for modeling the oxidized states of the active site of nickel-iron hydrogenases. 1. Verification of the method with paramagnetic Ni and Co complexes.

ZORA relativistic DFT calculations are presented which aim to reproduce geometric structures and EPR properties of [Ni(mnt)(2)](-) (H(2)mnt = maleonitrildithiol), two other paramagnetic low-spin Ni(III) complexes, and an asymmetric paramagnetic Co(II) complex. The study tests the accuracy of the computational method as a prior step to the modeling of the geometric and electronic structure of the active site of NiFe hydrogenases in its EPR-active oxidized states Ni-A and Ni-B. Systematic deviations from experiment are found for the calculated g-values; relative differences among them are, however, well reproduced. Because no significant improvements have been achieved by using larger basis sets or more sophisticated functionals, g-values may be calculated rather rapidly at the VWN level. This is most important for the modeling of the active site of NiFe hydrogenases because its complexity does not permit calculations at high levels of theory. For [Ni(mnt)(2)](-), excellent agreement between calculated and experimental results is obtained for the (14)N quadrupole coupling, whereas the calculated hyperfine couplings are not always in good agreement with experimental data.

Density functional calculations for modeling the active site of nickel-iron hydrogenases. 2. Predictions for the unready and ready States and the corresponding activation processes.

ZORA relativistic DFT calculations are presented which aim to model the geometric and electronic structure of the active site of NiFe hydrogenases in its EPR-active oxidized states Ni-A (unready state) and Ni-B (ready state). Starting coordinates are taken from the X-ray structure of a mutant of Desulfovibrio fructosovorans hydrogenase refined at 1.81 A resolution. Nine possible candidates for Ni-A and Ni-B are analyzed in terms of their geometric and electronic structure. Comparison of calculated geometric and magnetic resonance parameters with available experimental data indicates that both oxidized states have a micro-hydroxo bridge between the two metal centers. The different electronic structures of both forms can be explained by a modification of a terminal cysteine in Ni-B, best modeled by protonation of the sulfur atom. A possible mechanism for the activation of both oxidized forms is presented.