Ultrafast electron trapping at the surface of semiconductor nanocrystals: excitonic and biexcitonic processes.

Aging of semiconductor nanocrystals (NCs) is well-known to attenuate the spontaneous photoluminescence from the band edge excitonic state by introduction of nonradiative trap states formed at the NC surface. In order to explore charge carrier dynamics dictated by the surface of the NC, femtosecond pump/probe spectroscopic experiments are performed on freshly synthesized and aged CdTe NCs. These experiments reveal fast electron trapping for aged CdTe NCs from the single excitonic state (X). Pump fluence dependence with excitonic state-resolved optical pumping enables directly populating the biexcitonic state (XX), which produces further accelerated electron trapping rates. This increase in electron trapping rate triggers coherent acoustic phonons by virtue of the ultrafast impulsive time scale of the surface trapping process. The observed trapping rates are discussed in terms of electron transfer theory.

State-resolved studies of biexcitons and surface trapping dynamics in semiconductor quantum dots.

Biexcitons in strongly confined, colloidal CdSe quantum dots were investigated with excitonic state selectivity combined with 10 fs temporal precision. Within the first 50 fs, the first excited state of the biexciton was observed. By 100 ps, mixed character biexcitons were observed, comprised of a core exciton and a surface trapped exciton. The size dependence of the biexciton binding energies is reported for these specific biexcitons. Analysis of the spectral signatures of each biexcitonic state yields a quantitative measure of enhanced excited state trapping rates at the surface of the quantum dots. By comparing the biexcitonic signals to the state-filling signals, we show that it is primarily the holes which are trapped at the interface on the 100 ps time scale.