Your browser doesn't support javascript.
loading
Mostrar: 20 | 50 | 100
Resultados 1 - 3 de 3
Filtrar
Mais filtros

Base de dados
Tipo de documento
Intervalo de ano de publicação
1.
ACS Appl Mater Interfaces ; 14(49): 54411-54422, 2022 Dec 14.
Artigo em Inglês | MEDLINE | ID: mdl-36418023

RESUMO

Sensing biomarkers in exhaled breath offers a potentially portable, cost-effective, and noninvasive strategy for disease diagnosis screening and monitoring, while high sensitivity, wide sensing range, and target specificity are critical challenges. We demonstrate a deep learning-assisted plasmonic sensing platform that can detect and quantify gas-phase biomarkers in breath-related backgrounds of varying complexity. The sensing interface consisted of Au/SiO2 nanopillars covered with a 15 nm metal-organic framework. A small camera was utilized to capture the plasmonic sensing responses as images, which were subjected to deep learning signal processing. The approach has been demonstrated at a classification accuracy of 95 to 98% for the diabetic ketosis marker acetone within a concentration range of 0.5-80 µmol/mol. The reported work provides a thorough exploration of single-sensor capabilities and sets the basis for more advanced utilization of artificial intelligence in sensing applications.


Assuntos
Técnicas Biossensoriais , Aprendizado Profundo , Testes Respiratórios/métodos , Inteligência Artificial , Dióxido de Silício , Biomarcadores/análise
2.
Sensors (Basel) ; 20(8)2020 Apr 24.
Artigo em Inglês | MEDLINE | ID: mdl-32344596

RESUMO

We demonstrate that photoemission properties of p-type GaAs can be altered by surface acoustic waves (SAWs) generated on the GaAs surface due to dynamical piezoelectric fields of SAWs. Multiphysics simulations indicate that charge-carrier recombination is greatly reduced, and electron effective lifetime in p-doped GaAs may increase by a factor of 10× to 20×. It implies a significant increase, by a factor of 2× to 3×, of quantum efficiency (QE) for GaAs photoemission applications, like GaAs photocathodes. Conditions of different SAW wavelengths, swept SAW intensities, and varied incident photon energies were investigated. Essential steps in SAW device fabrication on a GaAs substrate are demonstrated, including deposition of an additional layer of ZnO for piezoelectric effect enhancement, measurements of current-voltage (I-V) characteristics of the SAW device, and ability to survive high-temperature annealing. Results obtained and reported in this study provide the potential and basis for future studies on building SAW-enhanced photocathodes, as well as other GaAs photoelectric applications.

3.
Nanoscale Adv ; 1(9): 3537-3546, 2019 Sep 11.
Artigo em Inglês | MEDLINE | ID: mdl-36133541

RESUMO

Surface acoustic waves (SAWs) have been widely studied due to their unique advantage to couple the mechanical, electrical, and optical characteristics of semiconductor materials and have successfully been used in many industrial applications. In this work, we report a design that uses piezoelectric material Zinc Oxide (ZnO) to enhance the generation and propagation of SAWs on the surface of a highly doped p-type Gallium Arsenide (GaAs) substrate, which is more extensively used in optoelectronic devices than intrinsic GaAs structures. To maximize the piezoelectricity and successfully generate SAWs, high quality c-axis orientation of the ZnO film is needed; thus we experiment and develop optimized recipes of a radio frequency (RF) magnetron sputtering system to deposit ZnO on the GaAs substrate. To further optimize the SAW performance, an intermediate Silicon Oxide (SiO2) layer is added between the ZnO film and GaAs substrate. Additionally, we test samples with varied thickness of ZnO films and dimensions of interdigital transducer (IDT) fingers to figure out their individual effect on SAW properties. The results and techniques demonstrated in this paper will provide guidance for further studies on enhancing SAWs propagating along many other doped semiconductor materials. This combination of acoustics and optoelectronics in doped semiconductors is a promising start to building enhanced and hybrid devices in various fields.

SELEÇÃO DE REFERÊNCIAS
DETALHE DA PESQUISA