Designing a Periodic Structure with a Composition Gradient Stack Unit to Realize a Good Comprehensive Dielectric Property of Yttrium Iron Garnet Multilayer Film.

Y3Fe5O12 (YIG) thin films are highly needed in microwave devices, but the low saturation magnetization and low dielectric constant greatly limit the application of YIG thin films. It was reported that the ion substitution, for example, Pr3+, could increase the dielectric constant of Y3-xPrxFe5O12 (YPrxIG). Unfortunately, the dielectric loss would also be significantly increased. In this work, [YPr0.20IG/YPr0.15IG/YPr0.10IG]N multilayer films were fabricated via the chemical solution deposition method, by designing a periodic structure with the [YPr0.20IG/YPr0.15IG/YPr0.10IG] composition gradient stack. In comparison to the average composition of YPr0.15IG, high saturation magnetization, high dielectric constant, and low loss were successfully simultaneously achieved in the multilayer structure. The N = 6 film exhibited a higher saturation magnetization of 252.8 emu/cm3 than the value (213.1) of the YPr0.15IG (average composition) film. The dielectric constant of the N = 6 film reached 25.6 in contrast to the value of 18.3 for the YPr0.15IG film at 12.4 GHz, which was the contribution of the rapid flip of the electric dipole of a single-unit dielectric material and the accumulation of interface charge. Furthermore, the dielectric loss of the film with N = 6 decreased to 0.0036 compared with the value (0.0102) of the average composition film. This work demonstrated a strategy of designing a periodic structure with a composition gradient stack unit to realize a good comprehensive dielectric property through taking advantage of the multiple effects of "coherent growth, component matching, and interface accumulation".

A Novel Donor-Acceptor Thiophene-Containing Oligomer Comprising Dibenzothiophene-S,S-dioxide Units for Solution-Processable Organic Field Effect Transistor.

A π-conjugated thiophene-containing oligomer with a D-A-D-A-D (D: donor, A: acceptor) architecture, namely, 2,6-bis{[4-(7-n-hexylthiophen-2-yl)thiophen-2-yl]-(dibenzothiophene-5,5-dioxide-3,3΄-diyl)}-bis((2-ethyl-hexyl)oxy)benzo[1,2-b:4,5-b']dithiophen (BDT(DBTOTTH)2), was synthesized by Stille coupling reactions. There are obvious shifts in the Ultraviolet-visible (UV-vis) and photoluminescence (PL) spectra of the thin film relative to its solution, indicating the existence of the π-π stacking in the solid state of the oligomer BDT(DBTOTTH)2. The optical band gap of the oligomer determined from its absorption onset in UV-Vis spectra is 2.25 eV. It agrees with the value of 2.29 eV determined from the cyclic voltammetry (CV) measurement. Its highest occupied and lowest unoccupied molecular orbital (HOMO/LUMO) energy levels, which were calculated from its onset of oxidation and reduction waves in CV curve, are -5.51 and -3.22 eV, respectively. The oligomer is a P-type semiconductor material with a good thermal stability and solubility, which can be used to fabricate organic field effect transistors (OFETs) by the spin coating technique. The OFET with n-octadecanylltrichlorosilane (OTS)-modified SiO2 dielectric layer exhibited a mobility of 1.6 × 10-3 cm2/Vs.

Integration of c-axis oriented Bi3.15Nd0.85Ti2.95Hf0.05O12/La0.67Sr0.33MnO3 ferromagnetic-ferroelectric composite film on Si substrate.

A La0.67Sr0.33MnO3 (LSMO) ferromagnetic layer and a Nd3+/Hf4+ co-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3-xHfxO12 (BNTHx, x = 0, 0.025, 0.05, 0.1 and 0.15)) ferroelectric layer were successively deposited onto the (00 l)-oriented LaNiO3 (LNO) layer buffered (001) Si substrate via all chemical solution deposition (CSD) method. As a result, the BNTHx/LSMO ferromagnetic-ferroelectric composite films integrated on Si substrate exhibit high c-axis orientation. The Nd3+/Hf4+ co-substituted BNTHx films have the lower leakage current and the better ferroelectric properties than the mono-substituted Bi4Ti3O12 (Bi3.15Nd0.85Ti3O12 and Bi4Ti2.95Hf0.05O12) films. In particular, the BNTH0.05/LSMO/LNO film has the lowest leakage current density of 2.5 × 10-7 A/cm2 at 200 kV/cm, and the highest remnant polarization (Pr) of 27.3 µC/cm2. The BNTH0.05/LSMO/LNO composite film also exhibits the soft ferromagnetism characteristics with a high saturated magnetization of 258 emu/cm3 at 300 K, and the excellent magnetoelectric (ME) effect. The variations of ME voltage coefficient α E values with DC bias magnetic field H bias shows that the BNTH0.05/LSMO/LNO film has the high α E value at near zero H bias. Moreover, at H bias = 0 Oe, the α E value gradually increases from zero with the increasing of the AC magnetic field frequency, and eventually reaches about 18.9 V/cm·Oe at 100 kHz, suggesting the existence of self-biased ME effect.

A novel thiophene-fused polycyclic aromatic with a tetracene core: synthesis, characterization, optical and electrochemical properties.

FeCl3-mediated oxidative cyclization was successfully used to construct an extended thiophene-pendant pyrene skeleton and synthesize a novel thiophene-fused polycyclic aromatic (THTP-C) with a tetracene core. The identity of the compound was confirmed by ¹H-NMR, ¹³C-NMR, MS, and elemental analysis. Meanwhile, a single crystal of THTP-C was obtained and analyzed by X-ray single-crystal diffraction. THTP-C has a "saddle" shaped π-conjugated 1-D supramolecular structure, and favors highly ordered self-assembly by π-π interactions as evidenced by its concentration-dependent ¹H-NMR spectra in solution. The optical properties of THTP-C were investigated by ultraviolet-visible (UV-Vis) and photoluminescence (PL) spectroscopy and its electrochemical properties were investigated by cyclic voltammetry (CV). The relatively large band gap (2.86 eV), low E(HOMO) level (-5.64 eV) and intermolecular π-π interactions imply that THTP-C has a high stability against photo-degradation and oxidation, and may be a promising candidate for stable hole-transporting materials.