Author Correction: Scalable high-precision tuning of photonic resonators by resonant cavity-enhanced photoelectrochemical etching.

The original version of this Article omitted the fourth author, Sara Ducci from Matériaux et Phénomènes Quantiques, Université Paris Diderot, CNRS UMR 7162, Sorbonne Paris-Cité, 10 rue Alice Domon et Léonie Duquet, Paris 75013, France. This mistake has been corrected in both the HTML and PDF versions of the Article.

Semiconductor devices for entangled photon pair generation: a review.

Entanglement is one of the most fascinating properties of quantum mechanical systems; when two particles are entangled the measurement of the properties of one of the two allows the properties of the other to be instantaneously known, whatever the distance separating them. In parallel with fundamental research on the foundations of quantum mechanics performed on complex experimental set-ups, we assist today with bourgeoning of quantum information technologies bound to exploit entanglement for a large variety of applications such as secure communications, metrology and computation. Among the different physical systems under investigation, those involving photonic components are likely to play a central role and in this context semiconductor materials exhibit a huge potential in terms of integration of several quantum components in miniature chips. In this article we review the recent progress in the development of semiconductor devices emitting entangled photons. We will present the physical processes allowing the generation of entanglement and the tools to characterize it; we will give an overview of major recent results of the last few years and highlight perspectives for future developments.

Origin of optical losses in gallium arsenide disk whispering gallery resonators.

Whispering gallery modes in GaAs disk resonators reach half a million of optical quality factor. These high Qs remain still well below the ultimate design limit set by bending losses. Here we investigate the origin of residual optical dissipation in these devices. A Transmission Electron Microscope analysis is combined with an improved Volume Current Method to precisely quantify optical scattering losses by roughness and waviness of the structures, and gauge their importance relative to intrinsic material and radiation losses. The analysis also provides a qualitative description of the surface reconstruction layer, whose optical absorption is then revealed by comparing spectroscopy experiments in air and in different liquids. Other linear and nonlinear optical loss channels in the disks are evaluated likewise. Routes are given to further improve the performances of these miniature GaAs cavities.

Photoelastic coupling in gallium arsenide optomechanical disk resonators.

We analyze the magnitude of the radiation pressure and electrostrictive stresses exerted by light confined inside GaAs semiconductor WGM optomechanical disk resonators, through analytical and numerical means, and find the electrostrictive stress to be of prime importance. We investigate the geometric and photoelastic optomechanical coupling resulting respectively from the deformation of the disk boundary and from the strain-induced refractive index changes in the material, for various mechanical modes of the disks. Photoelastic optomechanical coupling is shown to be a predominant coupling mechanism for certain disk dimensions and mechanical modes, leading to total coupling gom and g(0) reaching respectively 3 THz/nm and 4 MHz. Finally, we point towards ways to maximize the photoelastic coupling in GaAs disk resonators, and we provide some upper bounds for its value in various geometries.

Electrically injected photon-pair source at room temperature.

One of the main challenges for future quantum information technologies is the miniaturization and integration of high performance components in a single chip. In this context, electrically driven sources of nonclassical states of light have a clear advantage over optically driven ones. Here we demonstrate the first electrically driven semiconductor source of photon pairs working at room temperature and telecom wavelengths. The device is based on type-II intracavity spontaneous parametric down-conversion in an AlGaAs laser diode and generates pairs at 1.57 µm. Time-correlation measurements of the emitted pairs give an internal generation efficiency of 7×10(-11) pairs/injected electron. The capability of our platform to support the generation, manipulation, and detection of photons opens the way to the demonstration of massively parallel systems for complex quantum operations.

AlGaAs microdisk cavities for second-harmonic generation.

We report on the design, the fabrication, and the optical characterization of AlGaAs microdisks suspended on a GaAs pedestal, conceived for second-harmonic generation with a pump in the third telecom window. We discuss the results concerning the linear characterization of whispering gallery modes at fundamental and second-harmonic wavelengths, an essential step prior to the investigation of quasi-phase-matched processes in this type of microcavity.

Optical instability and self-pulsing in silicon nitride whispering gallery resonators.

We report time domain observations of optical instability in high Q silicon nitride whispering gallery disk resonators. At low laser power the transmitted optical power through the disk looks chaotic. At higher power, the optical output settles into a stable self-pulsing regime with periodicity ranging from hundreds of milliseconds to hundreds of seconds. This phenomenon is explained by the interplay between a fast thermo-optic nonlinearity within the disk and a slow thermo-mechanic nonlinearity of the structure. A model for this interplay is developed which provides good agreement with experimental data and points out routes to control this instability.

Nearly-degenerate three-wave mixing at 1.55 µm in oxidized AlGaAs waveguides.

We report on continuous-wave sum and difference frequency generation in selectively oxidized AlGaAs waveguides designed for degenerate spontaneous parametric down-conversion at 1.55 µm. Sum frequency generation with two pumps around this wavelength is observed with a conversion efficiency η = 1080%W-1cm-2. Difference frequency generation is also performed near degeneracy, with an external conversion efficiency η(ext) = 9.7%W-1cm-2 and a tunability of 570 nm. These results are promising for the feasibility of an integrated telecom source based on parametric fluorescence.

High frequency GaAs nano-optomechanical disk resonator.

Optomechanical coupling between a mechanical oscillator and light trapped in a cavity increases when the coupling takes place in a reduced volume. Here we demonstrate a GaAs semiconductor optomechanical disk system where both optical and mechanical energy can be confined in a subwavelength scale interaction volume. We observe a giant optomechanical coupling rate up to 100 GHz/nm involving picogram mass mechanical modes with a frequency between 100 MHz and 1 GHz. The mechanical modes are singled-out measuring their dispersion as a function of disk geometry. Their Brownian motion is optically resolved with a sensitivity of 10(-17) m/√Hz] at room temperature and pressure, approaching the quantum limit imprecision.