Halogenated MOF-5 variants show new configuration, tunable band gaps and enhanced optical response in the visible and near infrared.

Inspired by recent experimental fabrication of mono-halogenated versions of Metal-Organic Framework MOF-5 (i.e., X-MOF-5, X = F to I) and some experimentally known fully halogenated MOF compounds, we systematically studied frameworks incorporating full halogenation of the BDC linkers of the prototypical Iso-Reticular Metal-Organic Framework (IRMOF) series, exemplified by MOF-5. Using quantum chemistry calculations, we find that halogenation leads to a 90° rotation of the aryl group, which is mainly ascribed to overcrowding between halogen atoms and the carboxyl and benzene ring and strong repulsion among in-plane atoms/groups. The 90° configuration decreases the repulsion, and maximizes the stabilization energy, and is therefore more stable than 0° configuration. We find that the band gap can be tuned from 4.1 to 1.5 eV as we go from F, Cl, Br, to I. This extends the optical response of these experimentally accessible materials through the visible and infrared region. We have also considered a broader range of new materials that substitute various metals for Zn. Totally, 70 materials were systematically examined computationally including (M4O)(BDC-Z4)3 (M = Zn, Cd, Be, Mg, Ca, Sr, Ba; Z = H, F, Cl, Br, I). For the full range of materials, we calculate band gaps of 4.2 to 1.0 eV, corresponding to a threshold of absorption of 290-1240 nm. Four selected materials were tested for stability using short 5 ps molecular dynamics simulations up to 600 K. The new materials with the smallest band gaps could potentially be used in near-infrared (NIR) light-emitting devices. Other properties, e.g., bulk moduli, formation energy, chemical bonding, and optical properties, were also investigated. The present results may provide new materials for use as novel photocatalysts, photoactive materials for photovoltaic cells, or functional devices in nanoelectronics and optoelectronics.

Stepwise mechanism and H2O-assisted hydrolysis in atomic layer deposition of SiO2 without a catalyst.

Atomic layer deposition (ALD) is a powerful deposition technique for constructing uniform, conformal, and ultrathin films in microelectronics, photovoltaics, catalysis, energy storage, and conversion. The possible pathways for silicon dioxide (SiO2) ALD using silicon tetrachloride (SiCl4) and water (H2O) without a catalyst have been investigated by means of density functional theory calculations. The results show that the SiCl4 half-reaction is a rate-determining step of SiO2 ALD. It may proceed through a stepwise pathway, first forming a Si-O bond and then breaking Si-Cl/O-H bonds and forming a H-Cl bond. The H2O half-reaction may undergo hydrolysis and condensation processes, which are similar to conventional SiO2 chemical vapor deposition (CVD). In the H2O half-reaction, there are massive H2O molecules adsorbed on the surface, which can result in H2O-assisted hydrolysis of the Cl-terminated surface and accelerate the H2O half-reaction. These findings may be used to improve methods for the preparation of SiO2 ALD and H2O-based ALD of other oxides, such as Al2O3, TiO2, ZrO2, and HfO2.

Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications.

We have demonstrated a flexible resistive random access memory unit with trilayer structure by atomic layer deposition (ALD). The device unit is composed of Al2O3/HfO2/Al2O3-based functional stacks on TiN-coated Si substrate. The cross-sectional HRTEM image and XPS depth profile of Al2O3/HfO2/Al2O3 on TiN-coated Si confirm the existence of interfacial layers between trilayer structures of Al2O3/HfO2/Al2O3 after 600°C post-annealing. The memory units of Pt/Al2O3/HfO2/Al2O3/TiN/Si exhibit a typical bipolar, reliable, and reproducible resistive switching behavior, such as stable resistance ratio (>10) of OFF/ON states, sharp distribution of set and reset voltages, better switching endurance up to 10(3) cycles, and longer data retention at 85°C over 10 years. The possible switching mechanism of trilayer structure of Al2O3/HfO2/Al2O3 has been proposed. The trilayer structure device units of Al2O3/HfO2/Al2O3 on TiN-coated Si prepared by ALD may be a potential candidate for oxide-based resistive random access memory.

Self-catalysis by aminosilanes and strong surface oxidation by O2 plasma in plasma-enhanced atomic layer deposition of high-quality SiO2.

Plasma-enhanced atomic layer deposition (PE-ALD) has been applied to prepare high-quality ultrathin films for microelectronics, catalysis, and energy applications. The possible pathways for SiO2 PE-ALD using aminosilanes and O2 plasma have been investigated by density functional theory calculations. The silane half-reaction between SiH4 and surface -OH is very difficult and requires a high activation free energy of 57.8 kcal mol(-1). The introduction of an aminosilane, such as BDMAS, can reduce the activation free energy to 11.0 kcal mol(-1) and the aminosilane plays the role of a self-catalyst in Si-O formation through the relevant half-reaction. Among the various species generated in O2 plasma, (3)O2 is inactive towards surface silane groups, similar to ordinary oxygen gas. The other three species, (1)O2, (1)O, and (3)O, can strongly oxidize surface silane groups through one-step or stepwise pathways. In the (3)O pathway, the triplet must be converted into the singlet and follow the (1)O pathway. Meanwhile, both (1)O and (3)O can decay to (1)O2 and enter into the relevant oxidation pathway. The concept of self-catalysis of aminosilanes may be invoked to design and prepare more effective Si precursors for SiO2 ALD. At the same time, the mechanism of strong surface oxidation by O2 plasma may be exploited in the PE-ALD preparation of other oxides, such as Al2O3, HfO2, ZrO2, and TiO2.

Study of the interaction between 8-azaguanine and bovine serum albumin using optical spectroscopy and molecular modeling methods.

The interaction between 8-azaguanine (8-Azan) and bovine serum albumin (BSA) in Tris-HCl buffer solutions at pH 7.4 was investigated by means of fluorescence and ultraviolet-visible (UV-Vis) spectroscopy. At 298 K and 310 K, at a wavelength of excitation (λ (ex)) of 282 nm, the fluorescence intensity decreased significantly with increasing concentrations of 8-Azan. Fluorescence static quenching was observed for BSA, which was attributed to the formation of a complex between 8-Azan and BSA during the binding reaction. This was illuminated further by the UV-Vis absorption spectra and the decomposition of the fluorescence spectra. The thermodynamic parameters ∆G, ∆H, ∆S were calculated. The results showed that the forces acting between 8-Azan and BSA were typical hydrophobic forces, and that the interaction process was spontaneous. The interaction distance r between 8-Azan and BSA, evaluated according to fluorescence resonance energy transfer theory, suggested that there is a high possibility of energy transfer from BSA to 8-Azan. Theoretical investigations based on homology modeling and molecular docking suggested that binding between 8-Azan and BSA is dominated by hydrophilic forces and hydrogen bonding. The theoretical investigations provided a good structural basis to explain the phenomenon of fluorescence quenching between 8-Azan and BSA.

A density-functional theory investigation of 3-nitro-1,2,4-triazole-5-one dimers and crystal.

Density-functional method with different basis sets was applied to the study of the highly efficient and low sensitive explosive 3-nitro-1,2,4-triazole-5-one (NTO) in both gaseous dimer and its bulk state. The binding energies have been corrected for the basis set superposition errors. Six stable dimers (II-VII) were located. The corrected binding energy of the most stable dimer VII is predicted to be -53.66 kJ/mol at the B3LYP/6-311++G(**) level. It was found that the structures of the more stable dimers (V-VII) are through the hydrogen bonding interaction between the carbonyl oxygen and the azole hydrogen of 3-nitro-1,2,4-triazole-5-one. The changes of Gibbs free energies (DeltaG) in the processes from the monomer to the dimers at 298.15 K are 8.51, 0.90, 0.35, -8.74, -10.67, and -11.06 kJ/mol for dimers from II to VII, respectively. Dimers V-VII, possessing cyclic structures, can be spontaneously produced from the isolated monomer at room temperature. The lattice energy is -156.14 kJ/mol, and this value becomes to -150.43 kJ/mol when a 50% correction of the basis set superposition error was adopted. The frontier bands are quite flat. Judged from the value of band gap of 4.0 eV, it may be predicted that 3-nitro-1,2,4-triazole-5-one is an insulator. Most atoms in NTO, with the exception of C(5) atom and the nitro atoms, make up the upper valence bands. In contrast, the lower conduction bands mainly consist of the nitro N and O atoms. The population of the C-NO(2) bond is much less than those of the other bonds and the detonation may be initiated by the breakdown of this bond.