Nanostars in Highly Si-Doped GaN.

Understanding the relation between surface morphology during epitaxy of GaN:Si and its electrical properties is important from both the fundamental and application perspectives. This work evidences the formation of nanostars in highly doped GaN:Si layers with doping level ranging from 5 × 1019 to 1 × 1020 cm-3 grown by plasma-assisted molecular beam epitaxy (PAMBE). Nanostars are 50-nm-wide platelets arranged in six-fold symmetry around the [0001] axis and have different electrical properties from the surrounding layer. Nanostars are formed in highly doped GaN:Si layers due to the enhanced growth rate along the a-direction ⟨112̅0⟩. Then, the hexagonal-shaped growth spirals, typically observed in GaN grown on GaN/sapphire templates, develop distinct arms that extend in the a-direction ⟨112̅0⟩. The nanostar surface morphology is reflected in the inhomogeneity of electrical properties at the nanoscale as evidenced in this work. Complementary techniques such as electrochemical etching (ECE), atomic force microscopy (AFM), and scanning spreading resistance microscopy (SSRM) are used to link the morphology and conductivity variations across the surface. Additionally, transmission electron microscopy (TEM) studies with high spatial resolution composition mapping by energy-dispersive X-ray spectroscopy (EDX) confirmed about 10% lower incorporation of Si in the hillock arms than in the layer. However, the lower Si content in the nanostars cannot solely be responsible for the fact that they are not etched in ECE. The compensation mechanism in the nanostars observed in GaN:Si is discussed to be an additional contribution to the local decrease in conductivity at the nanoscale.

Electrically pumped blue laser diodes with nanoporous bottom cladding.

We demonstrate electrically pumped III-nitride edge-emitting laser diodes (LDs) with nanoporous bottom cladding grown by plasma-assisted molecular beam epitaxy on c-plane (0001) GaN. After the epitaxy of the LD structure, highly doped 350 nm thick GaN:Si cladding layer with Si concentration of 6·1019 cm-3 was electrochemically etched to obtain porosity of 15 ± 3% with pore size of 20 ± 9 nm. The devices with nanoporous bottom cladding are compared to the reference structures. The pulse mode operation was obtained at 448.7 nm with a slope efficiency (SE) of 0.2 W/A while the reference device without etched cladding layer was lasing at 457 nm with SE of 0.56 W/A. The design of the LDs with porous bottom cladding was modelled theoretically. Performed calculations allowed to choose the optimum porosity and thickness of the cladding needed for the desired optical mode confinement and reduced the risk of light leakage to the substrate and to the top-metal contact. This demonstration opens new possibilities for the fabrication of III-nitride LDs.

Dependence of InGaN Quantum Well Thickness on the Nature of Optical Transitions in LEDs.

The design of the active region is one of the most crucial problems to address in light emitting devices (LEDs) based on III-nitride, due to the spatial separation of carriers by the built-in polarization. Here, we studied radiative transitions in InGaN-based LEDs with various quantum well (QW) thicknesses-2.6, 6.5, 7.8, 12, and 15 nm. In the case of the thinnest QW, we observed a typical effect of screening of the built-in field manifested with a blue shift of the electroluminescence spectrum at high current densities, whereas the LEDs with 6.5 and 7.8 nm QWs exhibited extremely high blue shift at low current densities accompanied by complex spectrum with multiple optical transitions. On the other hand, LEDs with the thickest QWs showed a stable, single-peak emission throughout the whole current density range. In order to obtain insight into the physical mechanisms behind this complex behavior, we performed self-consistent Schrodinger-Poisson simulations. We show that variation in the emission spectra between the samples is related to changes in the carrier density and differences in the magnitude of screening of the built-in field inside QWs. Moreover, we show that the excited states play a major role in carrier recombination for all QWs, apart from the thinnest one.

Revealing inhomogeneous Si incorporation into GaN at the nanometer scale by electrochemical etching.

Typical methods of doping quantification are based on spectroscopy or conductivity measurements. The spatial dopant distribution assessment with nanometer-scale precision is limited usually to one or two dimensions. Here we demonstrate an approach to detect three-dimensional dopant homogeneity in GaN:Si layers using electrochemical etching (ECE). GaN:Si layers are grown by plasma-assisted molecular beam epitaxy. Dopant incorporation is uniform when the growth front morphology is atomically flat. Non-uniform Si incorporation into GaN is observed when step-bunches are present on the surface during epitaxy. In this study we show that local Si concentration in the area of step-bunch is about three times higher than in the area between step-bunches. ECE spatial resolution in our experiment is estimated to be about 50 nm. This makes ECE a simple and quantitative probing tool for local three-dimensional conductivity homogeneity assessment. Our study proves that ECE could be important both for fundamental studies of crystal growth physics and impurity incorporation and for ion-implanted structures and post-processing device control.

Terahertz 3D printed diffractive lens matrices for field-effect transistor detector focal plane arrays.

We present the concept, the fabrication processes and the experimental results for materials and optics that can be used for terahertz field-effect transistor detector focal plane arrays. More specifically, we propose 3D printed arrays of a new type - diffractive multi-zone lenses of which the performance is superior to that of previously used mono-zone diffractive or refractive elements and evaluate them with GaN/AlGaN field-effect transistor terahertz detectors. Experiments performed in the 300-GHz atmospheric window show that the lens arrays offer both a good efficiency and good uniformity, and may improve the signal-to-noise ratio of the terahertz field-effect transistor detectors by more than one order of magnitude. In practice, we tested 3 × 12 lens linear arrays with printed circuit board THz detector arrays used in postal security scanners and observed significant signal-to-noise improvements. Our results clearly show that the proposed technology provides a way to produce cost-effective, reproducible, flat optics for large-size field-effect transistor THz-detector focal plane arrays.