Nano Hotplate Fabrication for Metal Oxide-Based Gas Sensors by Combining Electron Beam and Focused Ion Beam Lithography.

Metal oxide semiconductor (MOS) gas sensors are widely used for gas detection. Typically, the hotplate element is the key component in MOS gas sensors which provide a proper and tunable operation temperature. However, the low power efficiency of the standard hotplates greatly limits the portable application of MOS gas sensors. The miniaturization of the hotplate geometry is one of the most effective methods used to reduce its power consumption. In this work, a new method is presented, combining electron beam lithography (EBL) and focused ion beam (FIB) technologies to obtain low power consumption. EBL is used to define the low-resolution section of the electrode, and FIB technology is utilized to pattern the high-resolution part. Different Au++ ion fluences in FIBs are tested in different milling strategies. The resulting devices are characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS). Furthermore, the electrical resistance of the hotplate is measured at different voltages, and the operational temperature is calculated based on the Pt temperature coefficient of resistance value. In addition, the thermal heater and electrical stability is studied at different temperatures for 110 h. Finally, the implementation of the fabricated hotplate in ZnO gas sensors is investigated using ethanol at 250 °C.

Fabrication of a Highly NO2-Sensitive Gas Sensor Based on a Defective ZnO Nanofilm and Using Electron Beam Lithography.

Hazardous substances produced by anthropic activities threaten human health and the green environment. Gas sensors, especially those based on metal oxides, are widely used to monitor toxic gases with low cost and efficient performance. In this study, electron beam lithography with two-step exposure was used to minimize the geometries of the gas sensor hotplate to a submicron size in order to reduce the power consumption, reaching 100 °C with 0.09 W. The sensing capabilities of the ZnO nanofilm against NO2 were optimized by introducing an enrichment of oxygen vacancies through N2 calcination at 650 °C. The presence of oxygen vacancies was proven using EDX and XPS. It was found that oxygen vacancies did not significantly change the crystallographic structure of ZnO, but they significantly improved the electrical conductivity and sensing behaviors of ZnO film toward 5 ppm of dry air.

Investigation on Sensing Performance of Highly Doped Sb/SnO2.

Tin dioxide (SnO2) is the most-used semiconductor for gas sensing applications. However, lack of selectivity and humidity influence limit its potential usage. Antimony (Sb) doped SnO2 showed unique electrical and chemical properties, since the introduction of Sb ions leads to the creation of a new shallow band level and of oxygen vacancies acting as donors in SnO2. Although low-doped SnO2:Sb demonstrated an improvement of the sensing performance compared to pure SnO2, there is a lack of investigation on this material. To fill this gap, we focused this work on the study of gas sensing properties of highly doped SnO2:Sb. Morphology, crystal structure and elemental composition were characterized, highlighting that Sb doping hinders SnO2 grain growth and decreases crystallinity slightly, while lattice parameters expand after the introduction of Sb ions into the SnO2 crystal. XRF and EDS confirmed the high purity of the SnO2:Sb powders, and XPS highlighted a higher Sb concentration compared to XRF and EDS results, due to a partial Sb segregation on superficial layers of Sb/SnO2. Then, the samples were exposed to different gases, highlighting a high selectivity to NO2 with a good sensitivity and a limited influence of humidity. Lastly, an interpretation of the sensing mechanism vs. NO2 was proposed.