Crystal Growth, Structures, and Properties of the Complex Borides, LaOs2Al2B and La2Os2AlB2.

Single crystals of two novel quaternary metal borides, LaOs2Al2B and La2Os2AlB2, have been grown from La/Ni eutectic fluxes. LaOs2Al2B crystallizes in tetragonal space group P4/mmm with the CeCr2Si2C-type structure, and lattice parameters a = 4.2075(6) Å and c = 5.634(1) Å. La2Os2AlB2 exhibits a new crystal structure in monoclinic space group C2/c with lattice parameters a = 16.629(3) Å, b = 6.048(1) Å, c = 10.393(2) Å, and ß = 113.96(3)°. Both structures are three-dimensional frameworks with unusual coordination (for solid-state compounds) of the boron atoms by transition metal atoms. The boron atom is square planar in LaOs2Al2B, whereas it exhibits linear and T-shaped geometries in La2Os2AlB2. Electrical resistivity measurements reveal poor metal behavior (ρ300 K ∼ 900 µΩ cm) for La2Os2AlB2, consistent with the electronic band structure calculations, which also predict a metallic character for LaOs2Al2B.

Hybridization Gap and Dresselhaus Spin Splitting in EuIr4In2Ge4.

EuIr4In2Ge4 is a new intermetallic semiconductor that adopts a non-centrosymmetric structure in the tetragonal I4̄2m space group with unit cell parameters a=6.9016(5) Šand c=8.7153(9) Å. The compound features an indirect optical band gap E(g)=0.26(2) eV, and electronic-structure calculations show that the energy gap originates primarily from hybridization of the Ir 5d orbitals, with small contributions from the Ge 4p and In 5p orbitals. The strong spin-orbit coupling arising from the Ir atoms, and the lack of inversion symmetry leads to significant spin splitting, which is described by the Dresselhaus term, at both the conduction- and valence-band edges. The magnetic Eu(2+) ions present in the structure, which do not play a role in gap formation, order antiferromagnetically at 2.5 K.

Amorphous oxide alloys as interfacial layers with broadly tunable electronic structures for organic photovoltaic cells.

In diverse classes of organic optoelectronic devices, controlling charge injection, extraction, and blocking across organic semiconductor-inorganic electrode interfaces is crucial for enhancing quantum efficiency and output voltage. To this end, the strategy of inserting engineered interfacial layers (IFLs) between electrical contacts and organic semiconductors has significantly advanced organic light-emitting diode and organic thin film transistor performance. For organic photovoltaic (OPV) devices, an electronically flexible IFL design strategy to incrementally tune energy level matching between the inorganic electrode system and the organic photoactive components without varying the surface chemistry would permit OPV cells to adapt to ever-changing generations of photoactive materials. Here we report the implementation of chemically/environmentally robust, low-temperature solution-processed amorphous transparent semiconducting oxide alloys, In-Ga-O and Ga-Zn-Sn-O, as IFLs for inverted OPVs. Continuous variation of the IFL compositions tunes the conduction band minima over a broad range, affording optimized OPV power conversion efficiencies for multiple classes of organic active layer materials and establishing clear correlations between IFL/photoactive layer energetics and device performance.

Hybrid germanium iodide perovskite semiconductors: active lone pairs, structural distortions, direct and indirect energy gaps, and strong nonlinear optical properties.

The synthesis and properties of the hybrid organic/inorganic germanium perovskite compounds, AGeI3, are reported (A = Cs, organic cation). The systematic study of this reaction system led to the isolation of 6 new hybrid semiconductors. Using CsGeI3 (1) as the prototype compound, we have prepared methylammonium, CH3NH3GeI3 (2), formamidinium, HC(NH2)2GeI3 (3), acetamidinium, CH3C(NH2)2GeI3 (4), guanidinium, C(NH2)3GeI3 (5), trimethylammonium, (CH3)3NHGeI3 (6), and isopropylammonium, (CH3)2C(H)NH3GeI3 (7) analogues. The crystal structures of the compounds are classified based on their dimensionality with 1­4 forming 3D perovskite frameworks and 5­7 1D infinite chains. Compounds 1­7, with the exception of compounds 5 (centrosymmetric) and 7 (nonpolar acentric), crystallize in polar space groups. The 3D compounds have direct band gaps of 1.6 eV (1), 1.9 eV (2), 2.2 eV (3), and 2.5 eV (4), while the 1D compounds have indirect band gaps of 2.7 eV (5), 2.5 eV (6), and 2.8 eV (7). Herein, we report on the second harmonic generation (SHG) properties of the compounds, which display remarkably strong, type I phase-matchable SHG response with high laser-induced damage thresholds (up to ∼3 GW/cm(2)). The second-order nonlinear susceptibility, χS(2), was determined to be 125.3 ± 10.5 pm/V (1), (161.0 ± 14.5) pm/V (2), 143.0 ± 13.5 pm/V (3), and 57.2 ± 5.5 pm/V (4). First-principles density functional theory electronic structure calculations indicate that the large SHG response is attributed to the high density of states in the valence band due to sp-hybridization of the Ge and I orbitals, a consequence of the lone pair activation.

Two-dimensional mineral [Pb2BiS3][AuTe2]: high-mobility charge carriers in single-atom-thick layers.

Two-dimensional (2D) electronic systems are of wide interest due to their richness in chemical and physical phenomena and potential for technological applications. Here we report that [Pb2BiS3][AuTe2], known as the naturally occurring mineral buckhornite, hosts 2D carriers in single-atom-thick layers. The structure is composed of stacking layers of weakly coupled [Pb2BiS3] and [AuTe2] sheets. The insulating [Pb2BiS3] sheet inhibits interlayer charge hopping and confines the carriers in the basal plane of the single-atom-thick [AuTe2] layer. Magneto-transport measurements on synthesized samples and theoretical calculations show that [Pb2BiS3][AuTe2] is a multiband semimetal with a compensated density of electrons and holes, which exhibits a high hole carrier mobility of ∼1360 cm(2)/(V s). This material possesses an extremely large anisotropy, Γ = ρ(c)/ρ(ab) ≈ 10(4), comparable to those of the benchmark 2D materials graphite and Bi2Sr2CaCu2O(6+δ). The electronic structure features linear band dispersion at the Fermi level and ultrahigh Fermi velocities of 10(6) m/s, which are virtually identical to those of graphene. The weak interlayer coupling gives rise to the highly cleavable property of the single crystal specimens. Our results provide a novel candidate for a monolayer platform to investigate emerging electronic properties.

Antagonism between Spin-Orbit Coupling and Steric Effects Causes Anomalous Band Gap Evolution in the Perovskite Photovoltaic Materials CH3NH3Sn1-xPbxI3.

Halide perovskite solar cells are a recent ground-breaking development achieving power conversion efficiencies exceeding 18%. This has become possible owing to the remarkable properties of the AMX3 perovskites, which exhibit unique semiconducting properties. The most efficient solar cells utilize the CH3NH3PbI3 perovskite whose band gap, Eg, is 1.55 eV. Even higher efficiencies are anticipated, however, if the band gap of the perovskite can be pushed deeper in the near-infrared region, as in the case of CH3NH3SnI3 (Eg = 1.3 eV). A remarkable way to improve further comes from the CH3NH3Sn1-xPbxI3 solid solution, which displays an anomalous trend in the evolution of the band gap with the compositions approaching x = 0.5 displaying lower band gaps (Eg ≈ 1.1 eV) than that of the lowest of the end member, CH3NH3SnI3. Here we use first-principles calculations to show that the competition between the spin-orbit coupling (SOC) and the lattice distortion is responsible for the anomalous behavior of the band gap in CH3NH3Sn1-xPbxI3. SOC causes a linear reduction as x increases, while the lattice distortion causes a nonlinear increase due to a composition-induced phase transition near x = 0.5. Our results suggest that electronic structure engineering can have a crucial role in optimizing the photovoltaic performance.

Switchable S = 1/2 and J = 1/2 Rashba bands in ferroelectric halide perovskites.

The Rashba effect is spin degeneracy lift originated from spin-orbit coupling under inversion symmetry breaking and has been intensively studied for spintronics applications. However, easily implementable methods and corresponding materials for directional controls of Rashba splitting are still lacking. Here, we propose organic-inorganic hybrid metal halide perovskites as 3D Rashba systems driven by bulk ferroelectricity. In these materials, it is shown that the helical direction of the angular momentum texture in the Rashba band can be controlled by external electric fields via ferroelectric switching. Our tight-binding analysis and first-principles calculations indicate that S = 1/2 and J = 1/2 Rashba bands directly coupled to ferroelectric polarization emerge at the valence and conduction band edges, respectively. The coexistence of two contrasting Rashba bands having different compositions of the spin and orbital angular momentum is a distinctive feature of these materials. With recent experimental evidence for the ferroelectric response, the halide perovskites will be, to our knowledge, the first practical realization of the ferroelectric-coupled Rashba effect, suggesting novel applications to spintronic devices.

Ba2HgS5--a molecular trisulfide salt with dumbbell-like (HgS2)2- ions.

Ba2HgS5 was synthesized by cooling a molten mixture of BaS, HgS, and elemental sulfur. It crystallizes in the orthorhombic Pnma space group with a = 12.190(2) Å, b = 8.677(2) Å, c = 8.371(2) Å, and dcalc = 4.77 g cm(-3). Its crystal structure consists of isolated dumbbell-shaped (HgS2)(2-) and v-shaped S3(2-) ions. These molecular anions are charge-balanced by Ba(2+) cations. Raman spectroscopy shows three strong bands originating from symmetric, asymmetric, and bending vibrational modes of the S3(2-) ions. X-ray photoelectron spectroscopic analysis confirms the presence of the trisulfide species. Ba2HgS5 has a bandgap of ∼2.4 eV. Electronic band structure calculations show that the bandgap is defined essentially by the p-orbitals of the sulfur atoms of the S3(2-) group.

LiPbSb3S6: a semiconducting sulfosalt with very low thermal conductivity.

The new semiconductor LiPbSb3S6 crystallizes in the space group P21/c. The structure is a member of the lillianite homologous series and is composed of layers of PbS archetype Sb/Li-S separated by trigonal-prismatic-coordinated Pb/Li. Electronic band structure calculations indicate an indirect band gap, with direct gaps lying very close in energy. LiPbSb3S6 has one of the lowest thermal conductivities seen in a crystalline material, ∼0.24 W m(-1) K(-1) at room temperature, and a high resistivity, ∼4 × 10(9) Ω·cm, and exhibits strong light absorption with a nearly direct band gap of 1.6 eV.

Thallium mercury chalcobromides, TlHg6Q4Br5 (Q = S, Se).

The new compounds TlHg6Q4Br5 (Q = S, Se) are reported along with their syntheses, crystal structures, and thermal and optical properties, as well as electronic band structure calculations. Both compounds crystallize in the tetragonal I4/m space group with a = 14.145(1) Å, c = 8.803(1) Å, and dcalc = 7.299 g/cm(3) for TlHg6S4Br5 (compound 1) and a = 14.518(2) Å, c = 8.782(1) Å, and dcalc = 7.619 g/cm(3) for TlHg6Se4Br5 (compound 2). They consist of cuboid Hg12Q8 building units interconnected by trigonal pyramids of BrHg3, forming a three-dimensional structure. The interstitial spaces are filled with thallium and bromide ions. Compounds 1 and 2 melt incongruently and show band gaps of 3.03 and 2.80 eV, respectively, which agree well with the calculated ones. First-principles electronic structure calculations at the density functional theory level reveal that both compounds have indirect band gaps, but there also exist direct transitions at energies similar to the indirect gaps.

Tunable Rashba effect in two-dimensional LaOBiS2 films: ultrathin candidates for spin field effect transistors.

Rashba spin splitting is a two-dimensional (2D) relativistic effect closely related to spintronics. However, so far there is no pristine 2D material to exhibit enough Rashba splitting for the fabrication of ultrathin spintronic devices, such as spin field effect transistors (SFET). On the basis of first-principles calculations, we predict that the stable 2D LaOBiS2 with only 1 nm of thickness can produce remarkable Rashba spin splitting with a magnitude of 100 meV. Because the medium La2O2 layer produces a strong polar field and acts as a blocking barrier, two counter-helical Rashba spin polarizations are localized at different BiS2 layers. The Rashba parameter can be effectively tuned by the intrinsic strain, while the bandgap and the helical direction of spin states sensitively depends on the external electric field. We propose an advanced Datta-Das SFET model that consists of dual gates and 2D LaOBiS2 channels by selecting different Rashba states to achieve the on-off switch via electric fields.

NaBa2Cu3S5: a doped p-type degenerate semiconductor.

Mixed S(2-/)S(1-) oxidation states have been discovered in the new quaternary compound NaBa2Cu3S5. Synthesized from the reaction of Cu in a molten alkali metal/polysulfide flux, the compound crystallizes in monoclinic space group C2/m with a = 16.5363(7) Å, b = 5.5374(5) Å, c = 10.3717(10) Å, ß = 98.535(8)°. The Na(+) Ba2(+2) [Cu(+)3S3](3-)S2(2-) crystal structure contains layers of edge sharing CuS4 tetrahedra and sheets of S2(2-) dimers. These layers are separated by mixed Ba/Na cation layers. The conductivity of the single crystals of NaBa2Cu3S5 is ∼450 S cm(-1) at room temperature, and increasing conductivity with decreasing temperature is observed, indicating metallic behavior despite the optical band gap of 0.45 eV. A small positive thermopower (45-55 µV K(-1) from 300 K to 500 K) and Hall effect measurements also confirm p-type conductivity with carrier concentration at 200 K of ∼1.6 × 10(21) cm(-3) and a hole mobility of ∼2 cm(2) V(-1) s(-1). NaBa2Cu3S5 exhibits temperature-independent Pauli paramagnetism.

Semiconducting [(Bi4Te4Br2)(Al2Cl(6-x)Br(x))]Cl2 and [Bi2Se2Br](AlCl4): cationic chalcogenide frameworks from Lewis acidic ionic liquids.

Lewis acidic organic ionic liquids provide a novel synthetic medium to prepare new semiconducting chalcogenides, [(Bi4Te4Br2)(Al2Cl5.46Br0.54)]Cl2 (1) and [Bi2Se2Br](AlCl4) (2). Compound 1 features a cationic [(Bi4Te4Br2)(Al2Cl5.46Br0.54)](2+) three-dimensional framework, while compound 2 consists of cationic layers of [Bi2Se2Br](2+). Spectroscopically measured band gaps of 1 and 2 are ∼0.6 and ∼1.2 eV, respectively. Thermoelectric power measurements of single crystals of 1 indicate an n-type semiconductor.

Structural, electronic, and linear optical properties of organic photovoltaic PBTTT-C14 crystal.

Poly(2,5-bis(3-tetradecylthiophen-2yl)thieno(3,2-b)thiophene) (PBTTT-C14) is an important electro-optical polymer, whose three-dimensional crystal structure is somewhat ambiguous and the fundamental electronic and linear optical properties are not well known. We carried out first-principles calculations to model the crystal structure and to study the effect of side-chains on the physical structure and electronic properties. Our calculations suggest that the patterns of side-chain has little direct effect on the valence band maximum and conduction band minimum but they do have impact on the bandgap through changing the π-π stacking distance. By examining the band structure and wave functions, we conclude that the fundamental bandgap of the PBTTT-C14 crystal is determined by the conduction band energy at the Q point. The calculations indicate that the bandgap of PBTTT-C14 crystal may be tunable by introducing different side-chains. The significant peak in the imaginary part of the dielectric function arises from transitions along the polymer backbone axis, as determined by the critical-point analysis and the large optical transition matrix elements in the direction of the backbone.

KAg11(VO4)4 as a candidate p-type transparent conducting oxide.

For a material to be a good p-type transparent conducting oxide (TCO), it must simultaneously satisfy several design principles regarding its bulk and defect phase thermochemistry, its optical absorption spectrum, and its electric transport properties. Recently, we predicted Ag3VO4 to be p-type but with low conductivity and an optical band gap not large enough for transparency. To improve on the transport and optical properties of Ag3VO4, we searched an extended material space including quaternary compounds based on Ag, V, O, and an additional atom for a new candidate p-type TCO. From this set of quaternary materials, we selected KAg11(VO4)4, a known oxide with a crystal structure related to that of Ag3VO4. Notably, one could expect a possible enhancement of the concentration of hole producing Ag-vacancy defects in KAg11(VO4)4 due to its different local geometries of Ag atoms (2- and 3-fold coordinated) with respect to the 4-fold coordinated Ag atoms in Ag3VO4. By performing first-principles calculations, we found that KAg11(VO4)4 is an intrinsic p-type conductor and can be synthesized under conditions similar to those predicted for the synthesis of Ag3VO4. However, we predict that the intrinsic hole content in KAg11(VO4)4 is similar to that in Ag3VO4 even though KAg11(VO4)4 contains 2- and 3-fold coordinated Ag, hole producing sites with a lower defect formation energy than the 4-fold coordinated one. Our calculation demonstrates that the advantage from lower coordination number of the Ag atom in KAg11(VO4)4 can be offset by the change in the range of Ag chemical potential in which synthesis is allowed due to the oxide phases that Ag forms with K and that energetically compete with KAg11(VO4)4.

Topological oxide insulator in cubic perovskite structure.

The emergence of topologically protected conducting states with the chiral spin texture is the most prominent feature at the surface of topological insulators. On the application side, large band gap and high resistivity to distinguish surface from bulk degrees of freedom should be guaranteed for the full usage of the surface states. Here, we suggest that the oxide cubic perovskite YBiO3, more than just an oxide, defines itself as a new three-dimensional topological insulator exhibiting both a large bulk band gap and a high resistivity. Based on first-principles calculations varying the spin-orbit coupling strength, the non-trivial band topology of YBiO3 is investigated, where the spin-orbit coupling of the Bi 6p orbital plays a crucial role. Taking the exquisite synthesis techniques in oxide electronics into account, YBiO3 can also be used to provide various interface configurations hosting exotic topological phenomena combined with other quantum phases.

Mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te): syntheses, crystal structures, band structures, and optical properties.

Three quaternary mercury bismuth chalcohalides, Hg3Q2Bi2Cl8 (Q = S, Se, Te), are reported along with their syntheses, crystal structures, electronic band structures, and optical properties. The compounds are structurally similar with a layer comprised of a hole perforated sheet network of [Hg3Q2](2+) (Q = S and Te) that forms by fused cyclohexane, chairlike Hg6Q6 rings. The cationic charge in the network is balanced by edge-sharing monocapped trigonal-prismatic anions of [Bi2Cl8](2-) that form a two-dimensional network located between layers. Compound 1, Hg3S2Bi2Cl8, crystallizes in the monoclinic space group C12/m1 with a = 12.9381(9) Å, b = 7.3828(6) Å, c = 9.2606(6) Å, and ß = 116.641(5)°. Compound 2, Hg3Te2Bi2Cl8, crystallizes in the monoclinic space group C12/c1 with a = 17.483(4) Å, b = 7.684(2) Å, c = 13.415(3) Å, and ß = 104.72(3)°. The crystals of the Hg3Se2Bi2Cl8 analogue exhibit complex modulations and structural disorder, which complicated its structural refinement. Compounds 1 and 2 melt incongruently and show band gaps of 3.26 and 2.80 eV, respectively, which are in a good agreement with those from band-structure density functional theory calculations.

Model GW study of the late transition metal monoxides.

The model GW method [F. Gygi and A. Baldereschi, Phys. Rev. Lett. 62, 2160 (1989)] is an efficient simplification to the standard GW approximation which uses model dielectric function to describe the long range Coulomb interactions in semiconductors. In this work, the model GW method is used to calculate the quasiparticle band structures of MnO, FeO, CoO, and NiO. All four late transition metal monoxides are predicted to be insulators. The band gaps, magnetic moments, and quasiparticle spectra are in good agreement with the experiments, except for the satellite structures which are missing in the density of states because the model GW self-energy is static. The high accuracy of model GW is due to the usage of the accurate dielectric constants in the construction of the model dielectric functions which ensures the correct asymptotic behavior of the long range Coulomb interactions. Besides, we find that the transition metal 4s states are irrelevant to the formation of the band gaps, which supports the local approaches and the experimental interpretations of the band gaps by photoemission and electron energy loss spectroscopy, while contradicts the recent calculations by hybrid functionals, exact exchange, and one shot GW approximations.

CsSnI3: Semiconductor or metal? High electrical conductivity and strong near-infrared photoluminescence from a single material. High hole mobility and phase-transitions.

CsSnI(3) is an unusual perovskite that undergoes complex displacive and reconstructive phase transitions and exhibits near-infrared emission at room temperature. Experimental and theoretical studies of CsSnI(3) have been limited by the lack of detailed crystal structure characterization and chemical instability. Here we describe the synthesis of pure polymorphic crystals, the preparation of large crack-/bubble-free ingots, the refined single-crystal structures, and temperature-dependent charge transport and optical properties of CsSnI(3), coupled with ab initio first-principles density functional theory (DFT) calculations. In situ temperature-dependent single-crystal and synchrotron powder X-ray diffraction studies reveal the origin of polymorphous phase transitions of CsSnI(3). The black orthorhombic form of CsSnI(3) demonstrates one of the largest volumetric thermal expansion coefficients for inorganic solids. Electrical conductivity, Hall effect, and thermopower measurements on it show p-type metallic behavior with low carrier density, despite the optical band gap of 1.3 eV. Hall effect measurements of the black orthorhombic perovskite phase of CsSnI(3) indicate that it is a p-type direct band gap semiconductor with carrier concentration at room temperature of ∼ 10(17) cm(-3) and a hole mobility of ∼585 cm(2) V(-1) s(-1). The hole mobility is one of the highest observed among p-type semiconductors with comparable band gaps. Its powders exhibit a strong room-temperature near-IR emission spectrum at 950 nm. Remarkably, the values of the electrical conductivity and photoluminescence intensity increase with heat treatment. The DFT calculations show that the screened-exchange local density approximation-derived band gap agrees well with the experimentally measured band gap. Calculations of the formation energy of defects strongly suggest that the electrical and light emission properties possibly result from Sn defects in the crystal structure, which arise intrinsically. Thus, although stoichiometric CsSnI(3) is a semiconductor, the material is prone to intrinsic defects associated with Sn vacancies. This creates highly mobile holes which cause the materials to appear metallic.

Ab initio prediction of pressure-induced structural phase transition of superconducting FeSe.

External pressure driven phase transitions of FeSe are predicted using ab initio calculations. The calculations reveal that α-FeSe makes transitions to NiAs-type, MnP-type, and CsCl-type FeSe. Transitions from NiAs-type to MnP-type and CsCl-type FeSe are also predicted. MnP-type FeSe is also found to be able to transform to CsCl-type FeSe, which is easier from α-FeSe than the transition to MnP-type FeSe, but comparable to the transition from NiAs-type FeSe. The calculated electronic structures show that all phases of FeSe are metallic, but the ionic interaction between Fe-Se bonds becomes stronger and the covalent interaction becomes weaker when the structural phase transition occurs from α-FeSe to the other phases of FeSe. The experimentally observed decrease in T(c) of superconducting α-FeSe at high pressure may be due to a structural/magnetic instability, which exists at high pressure. The results suggest an increase of the T(c) of α-FeSe if such phase transitions are frustrated by suitable methods.