Ultraviolet astronomical spectrograph calibration with laser frequency combs from nanophotonic lithium niobate waveguides.

Astronomical precision spectroscopy underpins searches for life beyond Earth, direct observation of the expanding Universe and constraining the potential variability of physical constants on cosmological scales. Laser frequency combs can provide the required accurate and precise calibration to the astronomical spectrographs. For cosmological studies, extending the calibration with such astrocombs to the ultraviolet spectral range is desirable, however, strong material dispersion and large spectral separation from the established infrared laser oscillators have made this challenging. Here, we demonstrate astronomical spectrograph calibration with an astrocomb in the ultraviolet spectral range below 400 nm. This is accomplished via chip-integrated highly nonlinear photonics in periodically-poled, nano-fabricated lithium niobate waveguides in conjunction with a robust infrared electro-optic comb generator, as well as a chip-integrated microresonator comb. These results demonstrate a viable route towards astronomical precision spectroscopy in the ultraviolet and could contribute to unlock the full potential of next-generation ground-based and future space-based instruments.

Femtosecond pulse amplification on a chip.

Femtosecond laser pulses enable the synthesis of light across the electromagnetic spectrum and provide access to ultrafast phenomena in physics, biology, and chemistry. Chip-integration of femtosecond technology could revolutionize applications such as point-of-care diagnostics, bio-medical imaging, portable chemical sensing, or autonomous navigation. However, current chip-integrated pulse sources lack the required peak power, and on-chip amplification of femtosecond pulses has been an unresolved challenge. Here, addressing this challenge, we report  >50-fold amplification of 1 GHz-repetition-rate chirped femtosecond pulses in a CMOS-compatible photonic chip to 800 W peak power with 116 fs pulse duration. This power level is 2-3 orders of magnitude higher compared to those in previously demonstrated on-chip pulse sources and can provide the power needed to address key applications. To achieve this, detrimental nonlinear effects are mitigated through all-normal dispersion, large mode-area and rare-earth-doped gain waveguides. These results offer a pathway to chip-integrated femtosecond technology with peak power levels characteristic of table-top sources.

The Effect of Annotation Quality on Wear Semantic Segmentation by CNN.

In this work, we investigate the impact of annotation quality and domain expertise on the performance of Convolutional Neural Networks (CNNs) for semantic segmentation of wear on titanium nitride (TiN) and titanium carbonitride (TiCN) coated end mills. Using an innovative measurement system and customized CNN architecture, we found that domain expertise significantly affects model performance. Annotator 1 achieved maximum mIoU scores of 0.8153 for abnormal wear and 0.7120 for normal wear on TiN datasets, whereas Annotator 3 with the lowest expertise achieved significantly lower scores. Sensitivity to annotation inconsistencies and model hyperparameters were examined, revealing that models for TiCN datasets showed a higher coefficient of variation (CV) of 16.32% compared to 8.6% for TiN due to the subtle wear characteristics, highlighting the need for optimized annotation policies and high-quality images to improve wear segmentation.

Real-time mode of operation data analysis to catch the thread-tip denotes the failure cause of the grid-tie PV central inverter.

The inverter is considered the core of the PV power plant. The inverter's failure leads to generation loss and decreases plant availability. So, it is required to investigate a clear Root Cause Analysis (RCA) to deduce the failure causes and implement the required corrective action in addition to the preventive action to avoid more inverter failure, hereby maintaining the plant available to a certain value. This paper discusses real-time mode operation data analysis of the PV grid-connected inverter due to real central inverter incidents in Benban solar park located in Egypt.The central inverter plays an important role in the Mega-Scale PV power plant. The main function of this inverter is to convert the DC power produced by the PV modules to AC power to be injected into the utility grid by considering specific characteristics based on the grid code. The availability of any PV power plant directly depends on the healthy inverter's operation. The more increases for the installed inverters, the less availability loss in the case of inverter partial or catastrophic failures. So, it is required to focus on the failure causes of the central inverter by implementing a technical analysis using the available operational data. The monitored data of the central inverter in the PV power plant is classified into two types. The first type is the continuous time data stored in the memory. It represents the waveforms of inverter outputs like voltage, current, frequency, …. etc. Unfortunately, in case of a catastrophic failure, the central inverter is completely charred, and the continuous time data is lost due to storage memory damage. The second type is the operation data that is recorded by the SCADA system (per one-minute interval). Hereby, the operation data is the sole data in the case of the completely charred inverter. The representation of the operational data in curves indicates symptoms that can be used for the RCA processes. The investigation outcomes include three results. The first result is detecting the signature of the IGBT thermal stress on the voltage balance of the DC link capacitor. The second result is verifying a scenario for the cause of the IGBT failure by implementing a technical mathematical model based on the detected symptoms that denote the fault signature which is considered the thread-tip for detecting the failure cause. The third result is the simulating scenario for the interpretation of a DC link capacitors explosion due to the short circuit fault that occurred due to IGBT failure. The investigation in this paper is performed based on operation data analysis of the PV grid-connected inverter (central type) due to a real incident. The analysis methodology is based on mathematical calculation for the IGBT junction temperature using the measured heatsink temperature. The study concludes that after the IGBT failure occurred, it was a short circuit for a while and closed the terminals of the DC link capacitors. So, the DC link capacitors exploded and produced heavy sparks that led to enough fire to burn the inverter container completely.

Efficient MIR crosstalk reduction based on silicon-on-calcium fluoride platform with Ge/Si strip arrays.

Reduction of the crosstalk (CT) between contiguous photonic components is still a big challenge in fabricating high packing density photonic integrated circuits (PICs). Few techniques to accomplish that goal have been offered in recent years but all in the near-IR region. In this paper, we report a design for realizing a highly efficient CT reduction in the MIR regime, for the first time to the best of our knowledge. The reported structure is based on the silicon-on-calcium-fluoride (SOCF) platform with uniform Ge/Si strip arrays. Using Ge strips shows better CT reduction and longer coupling length (Lc) than the conventional Si based devices over a wide bandwidth in the MIR region. The effect of adding a different number of Ge and Si strips with different dimensions between two adjacent Si waveguides on the Lc and hence on the CT is analyzed using both full vectorial finite element method and 3D finite difference time domain method. An increase in the Lc by 4 orders of magnitude and 6.5 times are obtained using Ge and Si strips, respectively, compared to strips-free Si waveguides. Consequently, crosstalk suppression of - 35 dB and - 10 dB for the Ge and Si strips, respectively, is shown. The proposed structure is beneficial for high packing density nanophotonic devices in the MIR regime, such as switches, modulators, splitters, and wavelength division (de)multiplexers, which are important for MIR communication integrated circuits, spectrometers, and sensors.

Linear Schrödinger equation with temporal evolution for front induced transitions.

The nonlinear Schrödinger equation based on slowly varying approximation is usually applied to describe the pulse propagation in nonlinear waveguides. However, for the case of the front induced transitions (FITs), the pump effect is well described by the dielectric constant perturbation in space and time. Thus, a linear Schrödinger equation (LSE) can be used. Also, in waveguides with weak dispersion the spatial evolution of the pulse temporal profile is usually tracked. Such a formulation becomes impossible for optical systems for which the group index or higher dispersion terms diverge as is the case near the band edge of photonic crystals. For the description of FITs in such systems a linear Schrödinger equation can be used where temporal evolution of the pulse spatial profile is tracked instead of tracking the spatial evolution. This representation provides the same descriptive power and can easily deal with zero group velocities. Furthermore, the Schrödinger equation with temporal evolution can describe signal pulse reflection from both static and counter-propagating fronts, in contrast to the Schrödinger equation with spatial evolution which is bound to forward propagation. Here, we discuss the two approaches and apply the LSE with temporal evolution for systems close to the band edge where the group velocity vanishes by simulating intraband indirect photonic transitions. We also compare the numerical results with the theoretical predictions from the phase continuity criterion for complete transitions.

Free-carrier detection in a silicon slab via absorption measurement in 2D integrating cells.

2D integrating cells provide long optical path lengths on a chip by multiple reflections at highly reflective mirrors similar to integrating spheres in free space. Therefore, they build a promising platform for integrated optical absorption sensing. Here, we present first absorption measurements of free carriers generated by a modulated pump laser inside a 2D integrating cell in a silicon slab. The results can be used to evaluate the lifetimes of free carriers in silicon slabs for integrated optics. Employing a silicon-on-insulator platform with a silicon thickness of 220 nm, we demonstrate measurements of the access free-carrier concentration on the order of 1-8·1015 cm-3 with lifetimes on the order of 0.1-1 µs governed by surface recombination at the silicon interfaces. The measured lifetimes are dependent on free-carrier concentration, which confirms previous observations. The presented free-carrier absorption experiment verifies the sensitivity of 2D integrating cells to changes in the absorption coefficient and thus demonstrates the potential of 2D integrating cells for absorption sensing.

Author Correction: Reflection from a free carrier front via an intraband indirect photonic transition.

The original version of this article contained an error in first sentence of the Acknowledgements, which incorrectly read 'M.A.G, D.J., A.Y.P. and M.E. acknowledge the support of the German Research Foundation under grant no. EI 391/13-2, and appreciate the support of CST, Darmstadt, Germany, with their Microwave Studio Software.' The correct version states '261759120' in place of 'EI 391/13-2'. This has been corrected in both the PDF and HTML versions of the article.

Reflection from a free carrier front via an intraband indirect photonic transition.

The reflection of light from moving boundaries is of interest both fundamentally and for applications in frequency conversion, but typically requires high pump power. By using a dispersion-engineered silicon photonic crystal waveguide, we are able to achieve a propagating free carrier front with only a moderate on-chip peak power of 6 W in a 6 ps-long pump pulse. We employ an intraband indirect photonic transition of a co-propagating probe, whereby the probe practically escapes from the front in the forward direction. This forward reflection has up to 35% efficiency and it is accompanied by a strong frequency upshift, which significantly exceeds that expected from the refractive index change and which is a function of group velocity, waveguide dispersion and pump power. Pump, probe and shifted probe all are around 1.5 µm wavelength which opens new possibilities for "on-chip" frequency manipulation and all-optical switching in optical telecommunications.

Self-mode-locking semiconductor disk laser.

The development of mode-locked semiconductor disk lasers received striking attention in the last 14 years and there is still a vast potential of such pulsed lasers to be explored and exploited. While for more than one decade pulsed operation was strongly linked to the employment of a saturable absorber, self-mode-locking emerged recently as an effective and novel technique in this field - giving prospect to a reduced complexity and improved cost-efficiency of such lasers. In this work, we highlight recent achievements regarding self-mode-locked semiconductor devices. It is worth to note, that although nonlinear effects in the active medium are expected to give rise to self-mode-locking, this has to be investigated with care in future experiments. However, there is a controversy whether results presented with respect to self-mode-locking truly show mode-locking. Such concerns are addressed in this work and we provide a clear evidence of mode-locking in a saturable-absorber-free device. By using a BBO crystal outside the cavity, green light originating from second-harmonic generation using the out-coupled laser beam is demonstrated. In addition, long-time-span pulse trains as well as radiofrequency-spectra measurements are presented for our sub-ps pulses at 500 MHz repetition rate which indicate the stable pulse operation of our device. Furthermore, a long-time-span autocorrelation trace is introduced which clearly shows absence of a pedestal or double pulses. Eventually, a beam-profile measurement reveals the excellent beam quality of our device with an M-square factor of less than 1.1 for both axes, showing that self-mode-locking can be achieved for the fundamental transverse mode.

Self-mode-locked quantum-dot vertical-external-cavity surface-emitting laser.

We present the first self-mode-locked optically pumped quantum-dot semiconductor disk laser. Our mode-locked device emits sub-picosecond pulses at a wavelength of 1040 nm and features a record peak power of 460 W at a repetition rate of 1.5 GHz. In this work, we also investigate the temperature dependence of the pulse duration as well as the time-bandwidth product for stable mode locking.