Analysis of heavy metal and arsenic sources in mangrove surface sediments at Wulishan Port on Leizhou Peninsula, China, using the APCS-MLR model.

Mangrove forests are sources and sinks for various pollutants. This study analyzed the current status of heavy metal and arsenic (As) pollution in mangrove surface sediments in rapidly industrializing and urbanizing port cities. Surface sediments of mangroves at Wulishan Port on the Leizhou Peninsula, China, were analyzed using inductively coupled plasma emission spectrometry (ICP-AES) and inductively coupled plasma mass spectrometry (ICP-MS) for the presence of Cr, Pb, Ni, Zn, Cd, Cu, As, and Hg. The Pollution load index, Nemerow pollution index, and Potential ecological risk index were employed to evaluate the pollutant. Multivariate statistical methods were applied for the qualitative analysis of pollutant sources, and the APCS-MLR receptor model was used for quantification. This study indicated the following results: (1) The average content of eight pollutants surpassed the local background level but did not exceed the Marine Sediment Quality standard. The pollution levels across the four sampling areas were ranked as Ⅲ > Ⅳ > Ⅰ > Ⅱ. The area Ⅱ exhibited relatively lower pollution levels with the grain size of the sediments dominated by sand, which was not conducive to pollutant adsorption and enrichment. (2) The factor analysis and cluster analyses identified three primary sources of contamination. As, Cr, Ni, and Pb originated from nearby industrial activities and their associated wastewater, suggesting that the primary source was the industrial source. Cd, Cu, and Zn stem from the cement columns utilized in oyster farming, alongside discharges from mariculture and pig farming, establishing a secondary agricultural source. Hg originated from ship exhaust burning oil and vehicle emissions in the vicinity, representing the third traffic source. (3) The APCS-MLR receptor model results demonstrated industrial, agricultural, and traffic sources contributing 47.19 %, 33.13 %, and 13.03 %, respectively, with 6.65 % attributed to unidentified sources.

Bandgap regulation and doping modification of Ga2-x Cr x Se3 nanosheets.

Ga2Se3, an important direct wide bandgap semiconductor with excellent optoelectronic properties, has wide application potential in the fields of photodetectors, photoelectric sensors and solar cells. Herein, we describe the synthesis of Ga2Se3 semiconductor nanoparticles using a high temperature organic liquid phase method. Post-annealing treatment at different temperatures can not only improve the crystallinity of Ga2Se3 nanoparticles, but also regulate its optical band gap ranging from 2.50 to 2.80 eV. We further synthesized Ga2-x Cr x Se3 nanosheets by doping CrCl3·6H2O in the reaction process. By adjusting the Cr doping concentration, Ga2-x Cr x Se3 nanosheets can achieve a continuously tunable band gap in the range of 2.23 eV to 2.42 eV. Both Ga2-x Cr x Se3 nanosheets and Ga2Se3 nanoparticles exhibit excellent and stable photoelectric switching performance. With Cr doping, Ga2-x Cr x Se3 exhibits reduced Nyquist impedance and enhanced electrocatalytic activity, which is attributed to its ultrathin nanosheet morphology and large specific surface area. In addition, the diamagnetic behavior of pure Ga2Se3 changes to ferromagnetism with different Cr doping concentrations, and its magnetization is as high as 18.0 emu g-1 at x = 0.4. These findings demonstrate that Ga2-x Cr x Se3 nanosheets have significant potential in future optoelectronic and magnetoelectric applications.