The Impact of Partial Carrier Confinement on Stimulated Emission in Strongly Confined Perovskite Nanocrystals.

Semiconductor lead halide perovskites are excellent candidates for realizing low threshold light amplification due to their tunable and highly efficient luminescence, ease of processing, and strong light-matter interactions. However, most studies on optical gain have addressed bulk films, nanowires, or nanocrystals that exhibit little or no size quantization. Here, we show by means of a multitude of optical spectroscopy methods that small CsPbBr3 nanocrystals (NCs) exhibit a progressive red shift of the band-edge transition upon addition of electron-hole pairs, at least one carrier of which occupies a 2-fold degenerate, delocalized state in agreement with strong confinement. We demonstrate that this combination results in a threshold for biexciton gain, well below the limit of one electron-hole pair on average per NC. On the other hand, both the luminescent lifetime and the optical Stark effect of 4.7 nm CsPbBr3 NCs indicate that the oscillator strength of the band-edge transition is considerably smaller than expected from the band-edge absorption. We assign this discrepancy to a mixed confinement regime, with one delocalized and one localized charge carrier, and show that the concomitant reduction of the oscillator strength for stimulated emission accounts for the surprisingly small material gain observed in small NCs. The conclusion of mixed confinement aligns with studies reporting small and large polarons for holes and electrons in lead halide perovskite nanocrystals, respectively, and creates opportunities for understanding multiexciton photophysics in confined perovskite materials.

Two-Dimensional Electron-Hole Plasma in Colloidal Quantum Shells Enables Integrated Lasing Continuously Tunable in the Red Spectrum.

Combining integrated optical platforms with solution-processable materials offers a clear path toward miniaturized and robust light sources, including lasers. A limiting aspect for red-emitting materials remains the drop in efficiency at high excitation density due to non-radiative quenching pathways, such as Auger recombination. Next to this, lasers based on such materials remain ill characterized, leaving questions about their ultimate performance. Here, we show that colloidal quantum shells (QSs) offer a viable solution for a processable material platform to circumvent these issues. We first show that optical gain in QSs is mediated by a 2D plasma state of unbound electron-hole pairs, opposed to bound excitons, which gives rise to broad-band and sizable gain across the full red spectrum with record gain lifetimes and a low threshold. Moreover, at high excitation density, the emission efficiency of the plasma state does not quench, a feat we can attribute to an increased radiative recombination rate. Finally, QSs are integrated on a silicon nitride platform, enabling high spectral contrast, surface emitting, and TE-polarized lasers with ultranarrow beam divergence across the entire red spectrum from a small surface area. Our results indicate QS materials are an excellent materials platform to realize highly performant and compact on-chip light sources.

Short-Wave Infrared Colloidal QD Photodetector with Nanosecond Response Times Enabled by Ultrathin Absorber Layers.

Ultrafast short-wavelength infrared (SWIR) photodetection is of great interest for emerging automated vision and spatial mapping technologies. Colloidal quantum dots (QDs) stand out for SWIR photodetection compared to epitaxial (In,Ga)As or (Hg,Cd)Te semiconductors by their combining a size-tunable bandgap and a suitability for cost-effective, solution-based processing. However, achieving ultrafast, nanosecond-level response time has remained an outstanding challenge for QD-based SWIR photodiodes (QDPDs). Here, record 4 ns response time in PbS-based QDPDs that operate at SWIR wavelengths is reported, a result reaching the requirement of SWIR light detection and ranging based on colloidal QDs. These ultrafast QDPDs combine a thin active layer to reduce the carrier transport time and a small area to inhibit slow capacitive discharging. By implementing a concentration gradient ligand exchange method, high-quality p-n junctions are fabricated in these ultrathin QDPDs. Moreover, these ultrathin QDPDs attain an external quantum efficiency of 42% at 1330 nm, due to a 2.5-fold enhanced light absorption through the formation of a Fabry-Perot cavity within the QDPD and the highly efficient extraction (98%) of photogenerated charge carriers. Based on these results, it is estimated that a further increase of the charge-carrier mobility can lead to PbS QDPDs with sub-nanosecond response time.

Decoding Excimer Formation in Covalent-Organic Frameworks Induced by Morphology and Ring Torsion.

A thorough and quantitative understanding of the fate of excitons in covalent-organic frameworks (COFs) after photoexcitation is essential for their augmented optoelectronic and photocatalytic applications via precise structure tuning. The synthesis of a library of COFs having identical chemical backbone with impeded conjugation, but varied morphology and surface topography to study the effect of these physical properties on the photophysics of the materials is herein reported. The variation of crystallite size and surface topography substantified different aggregation pattern in the COFs, which leads to disparities in their photoexcitation and relaxation properties. Depending on aggregation, an inverse correlation between bulk luminescence decay time and exciton binding energy of the materials is perceived. Further transient absorption spectroscopic analysis confirms the presence of highly localized, immobile, Frenkel excitons (of diameter 0.3-0.5 nm) via an absence of annihilation at high density, most likely induced by structural torsion of the COF skeletons, which in turn preferentially relaxes via long-lived (nanosecond to microsecond) excimer formation (in femtosecond scale) over direct emission. These insights underpin the importance of structural and topological design of COFs for their targeted use in photocatalysis.

Integrated PbS Colloidal Quantum Dot Photodiodes on Silicon Nitride Waveguides.

Colloidal quantum dots (QDs) have become a versatile optoelectronic material for emitting and detecting light that can overcome the limitations of a range of electronic and photonic technology platforms. Photonic integrated circuits (PICs), for example, face the persistent challenge of combining active materials with passive circuitry ideally suited for guiding light. Here, we demonstrate the integration of photodiodes (PDs) based on PbS QDs on silicon nitride waveguides (WG). Analyzing planar QDPDs first, we argue that the main limitation WG-coupled QDPDs face is detector saturation induced by the high optical power density of the guided light. Using the cladding thickness and waveguide width as design parameters, we mitigate this issue, and we demonstrate WG-QDPDs with an external quantum efficiency of 67.5% at 1275 nm that exhibit a linear photoresponse for input powers up to 400 nW. In the next step, we demonstrate a compact infrared spectrometer by integrating these WG-QDPDs on the output channels of an arrayed waveguide grating demultiplexer. This work provides a path toward a low-cost PD solution for PICs, which are attractive for large-scale production.

Optical gain and lasing from bulk cadmium sulfide nanocrystals through bandgap renormalization.

Strongly confined colloidal quantum dots have been investigated for low-cost light emission and lasing for nearly two decades. However, known materials struggle to combine technologically relevant metrics of low-threshold and long inverted-state lifetime with a material gain coefficient fit to match cavity losses, particularly under electrical excitation. Here we show that bulk nanocrystals of CdS combine an exceptionally large material gain of 50,000 cm-1 with best-in-class gain thresholds below a single exciton per nanocrystal and 3 ns gain lifetimes not limited by non-radiative Auger processes. We quantitatively account for these findings by invoking a strong bandgap renormalization effect, unobserved in nanocrystals to date, to the best of our knowledge. Next, we demonstrate broadband amplified spontaneous emission and lasing under quasi-continuous-wave conditions. Our results highlight the prospects of bulk nanocrystals for lasing from solution-processable materials.

Colloidal CdSe/CdS Core/Crown Nanoplatelets for Efficient Blue Light Emission and Optical Amplification.

The application of CdSe nanoplatelets (NPLs) in the ultraviolet/blue region remains an open challenge due to charge trapping typically leading to limited photoluminescence quantum efficiency (PL QE) and sub-bandgap emission in core-only NPLs. Here, we synthesized 3.5 monolayer core/crown CdSe/CdS NPLs with various crown dimensions, exhibiting saturated blue emission and PL QE up to 55%. Compared to core-only NPLs, the PL intensity decays monoexponentially over two decades due to suppressed deep trapping and delayed emission. In both core-only and core/crown NPLs we observe biexciton-mediated optical gain between 470 and 510 nm, with material gain coefficients up to 7900 cm-1 and consistently lower gain thresholds in crowned NPLs. Gain lifetimes are limited to 40 ps, due to residual ultrafast trapping and higher exciton densities at threshold. Our results provide guidelines for rational optimization of thin CdSe NPLs toward lighting and light-amplification applications.

Charge Carrier Dynamics in Colloidally Synthesized Monolayer MoX2 Nanosheets.

Transition metal dichalcogenides (TMDs) are nanostructured semiconductors with prospects in optoelectronics and photocatalysis. Several bottom-up procedures to synthesize such materials have been developed yielding colloidal transition metal dichalcogenides (c-TMDs). Where such methods initially yielded multilayered sheets with indirect band gaps, recently, also the formation of monolayered c-TMDs became possible. Despite these advances, no clear picture on the charge carrier dynamics in monolayer c-TMDs exists to date. Here, we show through broadband and multiresonant pump-probe spectroscopy, that the carrier dynamics in monolayer c-TMDs are dominated by a fast electron trapping mechanism, universal to both MoS2 and MoSe2, contrasting hole-dominated trapping in their multilayered counterparts. Through a detailed hyperspectral fitting procedure, sizable exciton red shifts are found and assigned to static shifts originating from both interactions with the trapped electron population and lattice heating. Our results pave the way to optimizing monolayer c-TMDs via passivation of predominantly the electron-trap sites.

Narrow homogeneous linewidths and slow cooling dynamics across infrared intra-band transitions in n-doped HgSe colloidal quantum dots.

Intra-band transitions in colloidal quantum dots (QDs) are promising for opto-electronic applications in the mid-IR spectral region. However, such intra-band transitions are typically very broad and spectrally overlapping, making the study of individual excited states and their ultrafast dynamics very challenging. Here, we present the first full spectrum two-dimensional continuum infrared (2D CIR) spectroscopy study of intrinsically n-doped HgSe QDs, which exhibit mid-infrared intra-band transitions in their ground state. The obtained 2D CIR spectra reveal that underneath the broad absorption line shape of ∼500 cm-1, the transitions exhibit surprisingly narrow intrinsic linewidths with a homogeneous broadening of 175-250 cm-1. Furthermore, the 2D IR spectra are remarkably invariant, with no sign of spectral diffusion dynamics at waiting times up to 50 ps. Accordingly, we attribute the large static inhomogeneous broadening to the distribution of size and doping level of the QDs. In addition, the two higher-lying P-states of the QDs can be clearly identified in the 2D IR spectra along the diagonal with a cross-peak. However, there is no indication of cross-peak dynamics indicating that, despite the strong spin-orbit coupling in HgSe, transitions between the P-states must be longer than our maximum waiting time of 50 ps. This study illustrates a new frontier of 2D IR spectroscopy enabling the study of intra-band carrier dynamics in nanocrystalline materials across the entire mid-infrared spectrum.

A roadmap to decipher ultrafast photophysics in two-dimensional nanomaterials.

Atomically thin two-dimensional (2D) semiconductors are extensively investigated for optoelectronic applications that require strong light-matter interactions. In view of such applications, it is essential to understand how (photo)excitation alters the non-linear optical response of these materials under high carrier density conditions. Broadband transient absorption (TA) spectroscopy is by now a widely used tool to study the semiconductor physics in such highly excited systems. However, the complex interplay between different many-body interactions in 2D materials produces highly congested spectral information and an ensuing non-trivial non-linear photo-response, thereby masking the desired intrinsic photophysics. Herein, we outline a concise roadmap for analyzing such congested datasets based on examples of TA analysis of various 2D materials. In particular, we emphasize the synergy between an initial qualitative understanding of the transient photo-response based on line shapes and their derivatives and a consequent quantitative spectral deconvolution backed by such insights.

Area-Independence of the Biexciton Oscillator Strength in CdSe Colloidal Nanoplatelets.

Colloidal CdSe nanoplatelets (NPLs) are unique systems to study two-dimensional excitons and excitonic complexes. However, while absorption and emission of photons through exciton formation and recombination have been extensively quantified, few studies have addressed the exciton-biexciton transition. Here, we use cross-polarized pump-probe spectroscopy to measure the absorption coefficient spectrum of this transition and determine the biexciton oscillator strength (fBX). We show that fBX is independent of the NPL area and that the concomitant biexciton area (SBX) agrees with predictions of a short-range interaction model. Moreover, we show that fBX is comparable to the oscillator strength of forming localized excitons at room temperature while being unaffected itself by center-of-mass localization. These results confirm the relevance of biexcitons for light-matter interaction in NPLs. Moreover, the quantification of the exciton-biexciton transition introduced here will enable researchers to rank 2D materials by the strength of this transition and to compare experimental results with theoretical predictions.

Slow Hole Localization and Fast Electron Cooling in Cu-Doped InP/ZnSe Quantum Dots.

Impurity doping of low-dimensional semiconductors is an interesting route towards achieving control over carrier dynamics and energetics, e.g., to improve hot carrier extraction, or to obtain strongly Stokes shifted luminescence. Such studies remain, however, underexplored for the emerging family of III-V colloidal quantum dots (QDs). Here, we show through a detailed global analysis of multiresonant pump-probe spectroscopy that electron cooling in copper-doped InP quantum dot (QDs) proceeds on subpicosecond time scales. Conversely, hole localization on Cu dopants is remarkably slow (1.8 ps), yet still leads to very efficient subgap emission. Due to this slow hole localization, common Auger assisted pathways in electron cooling cannot be blocked by Cu doping III-V systems, in contrast with the case of II-VI QDs. Finally, we argue that the structural relaxation around the Cu dopants, estimated to impart a reorganization energy of 220 meV, most likely proceeds simultaneously with the localization itself leading to efficient luminescence.

Quantum dot lasing from a waterproof and stretchable polymer film.

Colloidal quantum dots (QDs) are excellent optical gain materials that combine high material gain, a strong absorption of pump light, stability under strong light exposure and a suitability for solution-based processing. The integration of QDs in laser cavities that fully exploit the potential of these emerging optical materials remains, however, a challenge. In this work, we report on a vertical cavity surface emitting laser, which consists of a thin film of QDs embedded between two layers of polymerized chiral liquid crystal. Forward directed, circularly polarized defect mode lasing under nanosecond-pulsed excitation is demonstrated within the photonic band gap of the chiral liquid crystal. Stable and long-term narrow-linewidth lasing of an exfoliated free-standing, flexible film under water is obtained at room temperature. Moreover, we show that the lasing wavelength of this flexible cavity shifts under influence of pressure, strain or temperature. As such, the combination of solution processable and stable inorganic QDs with high chiral liquid crystal reflectivity and effective polymer encapsulation leads to a flexible device with long operational lifetime, that can be immersed in different protic solvents to act as a sensor.

Intraband dynamics of mid-infrared HgTe quantum dots.

Femtosecond pump-probe spectroscopy reveals ultrafast carrier dynamics in mid-infrared (MIR) colloidal HgTe nanoparticles with a bandgap of 2.5 µm. We observe intraband relaxation processes after photoexcitation ranging from resonant excitation up to the multi-exciton generation (MEG) regime by identifying initially excited states from atomic effective pseudopotential calculations. Our study elucidates the earliest dynamics below 10 ps in this technologically relevant material. With increasing photon energy, we find carrier relaxation times as long as 2.1 ps in the MEG regime close to the ionization threshold of the particles. For all photon energies, we extract a constant mean carrier energy dissipation rate of 0.36 eV ps-1 from which we infer negligible impact of the density of states on carrier cooling.

Broadband Optical Phase Modulation by Colloidal CdSe Quantum Wells.

Two-dimensional (2D) semiconductors are primed to realize a variety of photonic devices that rely on the transient properties of photogenerated charges, yet little is known on the change of the refractive index. The associated optical phase changes can be beneficial or undesired depending on the application, but require proper quantification. Measuring optical phase modulation of dilute 2D materials is, however, not trivial with common methods. Here, we demonstrate that 2D colloidal CdSe quantum wells, a useful model system, can modulate the phase of light across a broad spectrum using a femtosecond interferometry method. Next, we develop a toolbox to calculate the time-dependent refractive index of colloidal 2D materials from widely available transient absorption experiments using a modified effective medium algorithm. Our results show that the excitonic features of 2D materials result in broadband, ultrafast, and sizable phase modulation, even extending to the near infrared because of intraband transitions.

Stimulated Emission through an Electron-Hole Plasma in Colloidal CdSe Quantum Rings.

Colloidal CdSe quantum rings (QRs) are a recently developed class of nanomaterials with a unique topology. In nanocrystals with more common shapes, such as dots and platelets, the photophysics is consistently dominated by strongly bound electron-hole pairs, so-called excitons, regardless of the charge carrier density. Here, we show that charge carriers in QRs condense into a hot uncorrelated plasma state at high density. Through strong band gap renormalization, this plasma state is able to produce broadband and sizable optical gain. The gain is limited by a second-order, yet radiative, recombination process, and the buildup is counteracted by a charge-cooling bottleneck. Our results show that weakly confined QRs offer a unique system to study uncorrelated electron-hole dynamics in nanoscale materials.

The Fine-Structure Constant as a Ruler for the Band-Edge Light Absorption Strength of Bulk and Quantum-Confined Semiconductors.

Low-dimensional semiconductors have found numerous applications in optoelectronics. However, a quantitative comparison of the absorption strength of low-dimensional versus bulk semiconductors has remained elusive. Here, we report generality in the band-edge light absorptance of semiconductors, independent of their dimensions. First, we provide atomistic tight-binding calculations that show that the absorptance of semiconductor quantum wells equals mπα (m = 1 or 2 with α as the fine-structure constant), in agreement with reported experimental results. Then, we show experimentally that a monolayer (superlattice) of quantum dots has similar absorptance, suggesting an absorptance quantum of mπα per (confined) exciton diameter. Extending this idea to bulk semiconductors, we experimentally demonstrate that an absorptance quantum equal to mπα per exciton Bohr diameter explains their widely varying absorption coefficients. We thus provided compelling evidence that the absorptance quantum πα per exciton diameter rules the band-edge absorption of all direct semiconductors, regardless of their dimension.

Localization-limited exciton oscillator strength in colloidal CdSe nanoplatelets revealed by the optically induced stark effect.

2D materials are considered for applications that require strong light-matter interaction because of the apparently giant oscillator strength of the exciton transitions in the absorbance spectrum. Nevertheless, the effective oscillator strengths of these transitions have been scarcely reported, nor is there a consistent interpretation of the obtained values. Here, we analyse the transition dipole moment and the ensuing oscillator strength of the exciton transition in 2D CdSe nanoplatelets by means of the optically induced Stark effect (OSE). Intriguingly, we find that the exciton absorption line reacts to a high intensity optical field as a transition with an oscillator strength FStark that is 50 times smaller than expected based on the linear absorption coefficient. We propose that the pronounced exciton absorption line should be seen as the sum of multiple, low oscillator strength transitions, rather than a single high oscillator strength one, a feat we assign to strong exciton center-of-mass localization. Within the quantum mechanical description of excitons, this 50-fold difference between both oscillator strengths corresponds to the ratio between the coherence area of the exciton's center of mass and the total area, which yields a coherence area of a mere 6.1 nm2. Since we find that the coherence area increases with reducing temperature, we conclude that thermal effects, related to lattice vibrations, contribute to exciton localization. In further support of this localization model, we show that FStark is independent of the nanoplatelet area, correctly predicts the radiative lifetime, and lines up for strongly confined quantum dot systems.

Generating Triplets in Organic Semiconductor Tetracene upon Photoexcitation of Transition Metal Dichalcogenide ReS2.

We studied the dynamics of transfer of photoexcited electronic states in a bilayer of the two-dimensional transition metal dichalcogenide ReS2 and tetracene, with the aim to produce triplets in the latter. This material combination was used as the band gap of ReS2 (1.5 eV) is slightly larger than the triplet energy of tetracene (1.25 eV). Using time-resolved optical absorption spectroscopy, transfer of photoexcited states from ReS2 to triplet states in tetracene was found to occur within 5 ps with an efficiency near 38%. This result opens up new possibilities for heterostructure design of two-dimensional materials with suitable organics to produce long-lived triplets. Triplets are of interest as sensitizers in a wide variety of applications including optoelectronics, photovoltaics, photocatalysis, and photon upconversion.

Liquid-Phase Exfoliation of Rhenium Disulfide by Solubility Parameter Matching.

In this work, we provide a detailed account of the liquid-phase exfoliation (LPE) of rhenium disulfide (ReS2), a promising new-generation two-dimensional material. By screening LPE in a wide range of solvents, we show that the most optimal solvents are characterized by similar Hildebrand or dispersive Hansen solubility parameters of 25 and 18 MPa1/2, respectively. Such values are attained by solvents such as N-methyl-2-pyrrolidone, N,N-dimethylformamide, and 1-butanol. In line with solution thermodynamics, we interpret the conditions for high-yield exfoliation as a matching of the solvent and ReS2 solubility parameters. Using N-methyl-2-pyrrolidone as an exemplary exfoliation solvent, we undertook a detailed analysis of the exfoliated ReS2. In-depth morphological, structural, and elemental characterization outlined that the LPE procedure presented here produces few-layer, anisotropically stacked, and chemically pure ReS2 platelets with long-term stability against oxidation. These results underscore the suitability of LPE to batch-produce few-layer and pristine ReS2 in solvents that have a solubility parameter close to 25 MPa1/2.