Intramolecular Force Contrast and Dynamic Current-Distance Measurements at Room Temperature.

Scanning probe microscopy can be used to probe the internal atomic structure of flat organic molecules. This technique requires an unreactive tip and has, until now, been demonstrated only at liquid helium and liquid nitrogen temperatures. We demonstrate intramolecular and intermolecular force contrast at room temperature on PTCDA molecules adsorbed on a Ag/Si(111)-(√[3]×√[3]) surface. The oscillating force sensor allows us to dynamically measure the vertical decay constant of the tunneling current. The precision of this method is increased by quantifying the transimpedance of the current to voltage converter and accounting for the tip oscillation. This measurement yields a clear contrast between neighboring molecules, which we attribute to the different charge states.

Atomic structure affects the directional dependence of friction.

Friction between two objects can be understood by the making, stretching, and breaking of thousands of atomic-scale asperities. We have probed single atoms in a nonisotropic surface [the H-terminated Si(100) surface] with a lateral force microscope operating in noncontact mode. We show that these forces are measurably different, depending upon the direction. Experimentally, these differences are observable in both the line profiles and the maximum stiffnesses. Density functional theory calculations show a concerted motion of the whole Si dimer during the tip-sample interaction. These results demonstrate that on an asperity-by-asperity basis, the surface atomic structure plays a strong role in the directional dependence of friction.

Scanning probe microscope simulator for the assessment of noise in scanning probe microscopy controllers.

We present an electronic circuit that allows to calibrate and troubleshoot scanning probe microscopy (SPM) controllers with respect to their noise performance. The control signal in an SPM is typically highly nonlinear-the tunneling current in scanning tunneling microscopy (STM) varies exponentially with distance. The exponential current-versus-voltage characteristics of diodes allow to model the current dependence in STM. Additional inputs allow to simulate the effects of external perturbations and the reactions of the control electronics. We characterized the noise performance of the feedback controller using the apparent topography roughness of recorded images. For a comparison of different STM controllers, an optimal gain parameter was determined by exploring settling times through a rectangular perturbation signal. We used the circuit to directly compare the performance of two types of SPM controllers used in our laboratory.

Phantom force induced by tunneling current: a characterization on Si(111).

Simultaneous measurements of tunneling current and atomic forces provide complementary atomic-scale data of the electronic and structural properties of surfaces and adsorbates. With these data, we characterize a strong impact of the tunneling current on the measured force on samples with limited conductivity. The effect is a lowering of the effective gap voltage through sample resistance which in turn lowers the electrostatic attraction, resulting in an apparently repulsive force. This effect is expected to occur on other low-conductance samples, such as adsorbed molecules, and to strongly affect Kelvin probe measurements when tunneling occurs.

Note: In situ cleavage of crystallographic oriented tips for scanning probe microscopy.

We report an in situ method of preparing tips for scanning probe microscopy (SPM). Oriented single-crystal nickel oxide (NiO) rods were diced, using a wafer saw, to prepare artificial breaking points. Two geometries, a single rod and a two-sided cut rod were fabricated. The cleavable tips were mounted to a force sensor based on a quartz tuning fork and cleaved using the coarse approach of the SPM. Atomically resolved force microscopy images of NiO (001) were taken with these NiO tips.

Local spectroscopy and atomic imaging of tunneling current, forces, and dissipation on graphite.

Theory predicts that the currents in scanning tunneling microscopy (STM) and the attractive forces measured in atomic force microscopy (AFM) are directly related. Atomic images obtained in an attractive AFM mode should therefore be redundant because they should be similar to STM. Here, we show that while the distance dependence of current and force is similar for graphite, constant-height AFM and STM images differ substantially depending on the distance and bias voltage. We perform spectroscopy of the tunneling current, the frequency shift, and the damping signal at high-symmetry lattice sites of the graphite (0001) surface. The dissipation signal is about twice as sensitive to distance as the frequency shift, explained by the Prandtl-Tomlinson model of atomic friction.

Atomic resolution of the silicon (111)-(7x7) surface by atomic force microscopy.

Achieving high resolution under ultrahigh-vacuum conditions with the force microscope can be difficult for reactive surfaces, where the interaction forces between the tip and the samples can be relatively large. A force detection scheme that makes use of a modified cantilever beam and senses the force gradient through frequency modulation is described. The reconstructed silicon (111)-(7x7) surface was imaged in a noncontact mode by force microscopy with atomic resolution (6 angstroms lateral, 0.1 angstrom vertical).