Optical Manipulation of Bipolarons in a System with Nonlinear Electron-Phonon Coupling.

We investigate full quantum mechanical evolution of two electrons nonlinearly coupled to quantum phonons and simulate the dynamical response of the system subject to a short spatially uniform optical pulse that couples to dipole-active vibrational modes. Nonlinear electron-phonon coupling can either soften or stiffen the phonon frequency in the presence of electron density. In the former case, an external optical pulse tuned just below the phonon frequency generates attraction between electrons and leads to a long-lived bound state even after the optical pulse is switched off. It originates from a dynamical modification of the self-trapping potential that induces a metastable state. By increasing the pulse frequency, the attractive electron-electron interaction changes to repulsive. Two sequential optical pulses with different frequencies can switch between attractive and repulsive interaction. Finally, we show that the pulse-induced binding of electrons is shown to be efficient also for weakly dispersive optical phonons, in the presence anharmonic phonon spectrum and in two dimensions.

Erratum: Ultrafast Doublon Dynamics in Photoexcited 1T-TaS_{2} [Phys. Rev. Lett. 120, 166401 (2018)].

This corrects the article DOI: 10.1103/PhysRevLett.120.166401.

Ultrafast Doublon Dynamics in Photoexcited 1T-TaS_{2}.

Strongly correlated materials exhibit intriguing properties caused by intertwined microscopic interactions that are hard to disentangle in equilibrium. Employing nonequilibrium time-resolved photoemission spectroscopy on the quasi-two-dimensional transition-metal dichalcogenide 1T-TaS_{2}, we identify a spectroscopic signature of doubly occupied sites (doublons) that reflects fundamental Mott physics. Doublon-hole recombination is estimated to occur on timescales of electronic hopping ℏ/J≈14 fs. Despite strong electron-phonon coupling, the dynamics can be explained by purely electronic effects captured by the single-band Hubbard model under the assumption of weak hole doping, in agreement with our static sample characterization. This sensitive interplay of static doping and vicinity to the metal-insulator transition suggests a way to modify doublon relaxation on the few-femtosecond timescale.