Broadband chaos of an interband cascade laser with a 6-GHz bandwidth.

Near-infrared semiconductor lasers subject to optical feedback usually produce chaos with a broad bandwidth of a few GHz. However, the reported mid-infrared interband cascade lasers (ICLs) only show chaos with a limited bandwidth below 1 GHz. Here we show that an ICL with optical feedback is able to generate broadband chaos as well. The mid-infrared chaos exhibits a remarkable bandwidth of about 6 GHz, which is comparable to that of the near-infrared counterpart. In addition, the spectral coverage in the electrical domain reaches as high as 17.7 GHz. It is found that the chaos bandwidth generally broadens with increasing feedback ratio and/or increasing pump current of the laser, while it is insensitive to the feedback length.

Impact of external carrier noise on the linewidth enhancement factor of a quantum dot distributed feedback laser.

This paper demonstrates that the linewidth enhancement factor of quantum dot lasers is influenced by the external carrier transport issued from different external current sources. A model combining the rate equation and semi-classical carrier noise is used to investigate the different mechanisms leading to the above phenomenon in the context of a quantum dot distributed feedback laser. Meanwhile, the linewidth enhancement factor extracted from the optical phase modulation method shows dramatic differences when the quantum dot laser is driven by different noise-level pumps. Furthermore, the influence of external carrier noise on the frequency noise in the vicinity of the laser's threshold current directly affects the magnitude of the linewidth enhancement factor. Simulations also investigate how the external carrier transport impacts the frequency noise and the spectral linewidth of the QD laser. Overall, we believe that these results are of paramount importance for the development of on-chip integrated ultra-low noise oscillators producing light at or below the shot-noise level.

Optical noise characteristics of injection-locked epitaxial quantum dot lasers on silicon.

This work theoretically investigates the relative intensity noise (RIN) and spectral linewidth characteristics of epitaxial quantum dot (QD) lasers on silicon subject to optical injection. The results show that the RIN of QD lasers can be reduced by optical injection, hence a reduction of 10 dB is achieved which leads to a RIN as low as -167.5 dB/Hz in the stable injection-locked area. Furthermore, the spectral linewidth of the QD laser can be greatly improved through the optical injection locked scheme. It is reduced from 556.5 kHz to 9 kHz with injection ratio of -60 dB and can be further reduced down to 1.5 Hz with injection ratio of 0 dB. This work provides an effective method for designing low intensity noise and ultra-narrow linewidth QD laser sources for photonics integrated circuits on silicon.

Linewidth narrowing in self-injection-locked on-chip lasers.

Stable laser emission with narrow linewidth is of critical importance in many applications, including coherent communications, LIDAR, and remote sensing. In this work, the physics underlying spectral narrowing of self-injection-locked on-chip lasers to Hz-level lasing linewidth is investigated using a composite-cavity structure. Heterogeneously integrated III-V/SiN lasers operating with quantum-dot and quantum-well active regions are analyzed with a focus on the effects of carrier quantum confinement. The intrinsic differences are associated with gain saturation and carrier-induced refractive index, which are directly connected with 0- and 2-dimensional carrier densities of states. Results from parametric studies are presented for tradeoffs involved with tailoring the linewidth, output power, and injection current for different device configurations. Though both quantum-well and quantum-dot devices show similar linewidth-narrowing capabilities, the former emits at a higher optical power in the self-injection-locked state, while the latter is more energy-efficient. Lastly, a multi-objective optimization analysis is provided to optimize the operation and design parameters. For the quantum-well laser, minimizing the number of quantum-well layers is found to decrease the threshold current without significantly reducing the output power. For the quantum-dot laser, increasing the quantum-dot layers or density in each layer increases the output power without significantly increasing the threshold current. These findings serve to guide more detailed parametric studies to produce timely results for engineering design.

Mid-infrared hyperchaos of interband cascade lasers.

Chaos in nonlinear dynamical systems is featured with irregular appearance and with high sensitivity to initial conditions. Near-infrared light chaos based on semiconductor lasers has been extensively studied and has enabled various applications. Here, we report a fully-developed hyperchaos in the mid-infrared regime, which is produced from interband cascade lasers subject to the external optical feedback. Lyapunov spectrum analysis demonstrates that the chaos exhibits three positive Lyapunov exponents. Particularly, the chaotic signal covers a broad frequency range up to the GHz level, which is two to three orders of magnitude broader than existed mid-infrared chaos solutions. The interband cascade lasers produce either periodic oscillations or low-frequency fluctuations before bifurcating to hyperchaos. This hyperchaos source is valuable for developing long-reach secure optical communication links and remote chaotic Lidar systems, taking advantage of the high-transmission windows of the atmosphere in the mid-infrared regime.

Uncovering recent progress in nanostructured light-emitters for information and communication technologies.

Semiconductor nanostructures with low dimensionality like quantum dots and quantum dashes are one of the best attractive and heuristic solutions for achieving high performance photonic devices. When one or more spatial dimensions of the nanocrystal approach the de Broglie wavelength, nanoscale size effects create a spatial quantization of carriers leading to a complete discretization of energy levels along with additional quantum phenomena like entangled-photon generation or squeezed states of light among others. This article reviews our recent findings and prospects on nanostructure based light emitters where active region is made with quantum-dot and quantum-dash nanostructures. Many applications ranging from silicon-based integrated technologies to quantum information systems rely on the utilization of such laser sources. Here, we link the material and fundamental properties with the device physics. For this purpose, spectral linewidth, polarization anisotropy, optical nonlinearities as well as microwave, dynamic and nonlinear properties are closely examined. The paper focuses on photonic devices grown on native substrates (InP and GaAs) as well as those heterogeneously and epitaxially grown on silicon substrate. This research pipelines the most exciting recent innovation developed around light emitters using nanostructures as gain media and highlights the importance of nanotechnologies on industry and society especially for shaping the future information and communication society.

Private communication with quantum cascade laser photonic chaos.

Mid-infrared free-space optical communication has a large potential for high speed communication due to its immunity to electromagnetic interference. However, data security against eavesdroppers is among the obstacles for private free-space communication. Here, we show that two uni-directionally coupled quantum cascade lasers operating in the chaotic regime and the synchronization between them allow for the extraction of the information that has been camouflaged in the chaotic emission. This building block represents a key tool to implement a high degree of privacy directly on the physical layer. We realize a proof-of-concept communication at a wavelength of 5.7 µm with a message encryption at a bit rate of 0.5 Mbit/s. Our demonstration of private free-space communication between a transmitter and receiver opens strategies for physical encryption and decryption of a digital message.

Effect of p-doping on the intensity noise of epitaxial quantum dot lasers on silicon.

This work experimentally investigates the impact of p-doping on the relative intensity noise (RIN) properties and subsequently on the modulation properties of semiconductor quantum dot (QD) lasers epitaxially grown on silicon. Owing to the low threading dislocation density and the p-modulation doped GaAs barrier layer in the active region, the RIN level is found very stable with temperature with a minimum value of -150dB/Hz. The dynamical features extracted from the RIN spectra show that p-doping between zero and 20 holes/dot strongly modifies the modulation properties and gain nonlinearities through increased internal losses in the active region and thereby hinders the maximum achievable bandwidth. Overall, this Letter is important for designing future high-speed and low-noise QD devices integrated in future photonic integrated circuits.

Frequency comb dynamics of a 1.3µm hybrid-silicon quantum dot semiconductor laser with optical injection: erratum.

In Opt. Lett.45, 5755 (2019)OPLEDP0146-959210.1364/OL.44.005755, a factor is missing in the result of Eq. (1). Thus, the width of the comb spectrum $ \Delta \nu $Δν becomes $ \Delta \nu = 2{\sqrt 3} \Gamma {\alpha _e} $Δν=23Γαe.

Frequency comb dynamics of a 1.3 µm hybrid-silicon quantum dot semiconductor laser with optical injection.

This work reports on the influence of bias voltage applied on a saturable absorber (SA) on a subthreshold linewidth enhancement factor (LEF) in hybrid-silicon quantum dot optical frequency comb lasers. Results show that the reverse bias voltage on SA contributes to enlarge the LEF and improve the comb dynamics. Optical injection is also found to be able to improve the comb spectrum in terms of 3 dB bandwidth and its flatness. Such novel findings are promising for the development of high-speed dense wavelength-division multiplexing photonic integrated circuits in optical interconnects and datacom applications.

Chaotic optical power dropouts driven by low frequency bias forcing in a mid-infrared quantum cascade laser.

Mid-infrared quantum cascade lasers operating under external optical feedback and external periodic bias forcing are shown to exhibit a deterministic chaotic pattern composed of frequencies which are linked to the one of the forcing. Results also show that both the amplitude and the frequency of the forcing play a key role in the number of retrieved spikes per modulation period. These findings are of paramount importance for chaotic operation of quantum cascade lasers in applications such as optical countermeasure systems and secure atmospheric transmission lines, as well as for simulating neuronal systems and the communication between neurons due to sudden bursts.

Frequency noise suppression of optical injection-locked quantum cascade lasers.

This work theoretically investigates the frequency noise (FN) characteristics of quantum cascade lasers subject to the optical injection through a set of coupled rate equations with Langevin noise sources. It is shown that the low-frequency FN is completely suppressed by the optical injection, and the suppression bandwidth increases with the increasing injection ratio. The optimal FN peak suppression ratio at an injection ratio of 10 dB reaches 2.9 dB. In addition, it is found that the optical injection at positive frequency detunings close to the locking boundary invokes an additional peak in the FN spectrum, which can be higher than the carrier noise-induced one of free-running lasers. This peak amplitude strongly depends on the value of the linewidth broadening factor. Unlike injection-locked interband lasers, the FN peak does not necessarily exhibit a resonance.

Rate equation modeling of the frequency noise and the intrinsic spectral linewidth in quantum cascade lasers.

This work theoretically investigates the frequency noise (FN) characteristics of quantum cascade lasers (QCLs) through a three-level rate equation model, which takes into account both the carrier noise and the spontaneous emission noise through the Langevin approach. It is found that the power spectral density of the FN exhibits a broad peak due to the carrier noise induced carrier variation in the upper laser level, which is enhanced by the stimulated emission process. The peak amplitude is strongly dependent on the gain stage number and the linewidth broadening factor. In addition, an analytical formula of the intrinsic spectral linewidth of QCLs is derived based on the FN analysis. It is demonstrated that the laser linewidth can be narrowed by reducing the gain coefficient and/or accelerating the carrier scattering rates of the upper and the lower laser levels.

Multimode optical feedback dynamics in InAs/GaAs quantum dot lasers emitting exclusively on ground or excited states: transition from short- to long-delay regimes.

The optical feedback dynamics of two multimode InAs/GaAs quantum dot lasers emitting exclusively on sole ground or excited lasing states is investigated. The transition from long- to short-delay regimes is analyzed, while the boundaries associated to the birth of periodic and chaotic oscillations are unveiled to be a function of the external cavity length. The results show that depending on the initial lasing state, different routes to chaos are observed. These results are of importance for the development of isolator-free transmitters in short-reach networks.

Comparison of optical feedback dynamics of InAs/GaAs quantum-dot lasers emitting solely on ground or excited states.

We experimentally compare the dynamics of InAs/GaAs quantum dot lasers under optical feedback emitting exclusively on ground states (GSs) or excited states (ESs). By varying the feedback parameters and putting focus either on their short or long cavity regions, various periodic and chaotic oscillatory states are found. The GS laser is shown to be more resistant to feedback, benefiting from its strong relaxation oscillation damping. In contrast, the ES laser can easily be driven into complex dynamics. While the GS laser is of importance for the development of isolator-free transmitters, the ES laser is essential for applications taking advantages of chaos.

Beam shaping in high-power broad-area quantum cascade lasers using optical feedback.

Broad-area quantum cascade lasers with high output powers are highly desirable sources for various applications including infrared countermeasures. However, such structures suffer from strongly deteriorated beam quality due to multimode behavior, diffraction of light and self-focusing. Quantum cascade lasers presenting high performances in terms of power and heat-load dissipation are reported and their response to a nonlinear control based on optical feedback is studied. Applying optical feedback enables to efficiently tailor its near-field beam profile. The different cavity modes are sequentially excited by shifting the feedback mirror angle. Further control of the near-field profile is demonstrated using spatial filtering. The impact of an inhomogeneous gain as well as the influence of the cavity width are investigated. Compared to existing technologies, that are complex and costly, beam shaping with optical feedback is a more flexible solution to obtain high-quality mid-infrared sources.

Thermally insensitive determination of the linewidth broadening factor in nanostructured semiconductor lasers using optical injection locking.

In semiconductor lasers, current injection not only provides the optical gain, but also induces variation of the refractive index, as governed by the Kramers-Krönig relation. The linear coupling between the changes of the effective refractive index and the modal gain is described by the linewidth broadening factor, which is responsible for many static and dynamic features of semiconductor lasers. Intensive efforts have been made to characterize this factor in the past three decades. In this paper, we propose a simple, flexible technique for measuring the linewidth broadening factor of semiconductor lasers. It relies on the stable optical injection locking of semiconductor lasers, and the linewidth broadening factor is extracted from the residual side-modes, which are supported by the amplified spontaneous emission. This new technique has great advantages of insensitivity to thermal effects, the bias current, and the choice of injection-locked mode. In addition, it does not require the explicit knowledge of optical injection conditions, including the injection strength and the frequency detuning. The standard deviation of the measurements is less than 15%.

Optically injected InAs/GaAs quantum dot laser for tunable photonic microwave generation.

We present an experimental investigation on the period-one dynamics of an optically injected InAs/GaAs quantum dot laser as a photonic microwave source. It is shown that the microwave frequency of the quantum dot laser's period-one oscillation is continuously tunable through the adjustment of the frequency detuning. The microwave power is enhanced by increasing the injection strength providing that the operation is away from the Hopf bifurcation, whereas the second-harmonic distortion of the electrical signal is well reduced by increasing the detuning frequency. Both strong optical injection and high detuning frequency are favorable for obtaining a single sideband optical signal. In addition, particular period-one oscillation points of low sensitivity to the frequency detuning are found close to the Hopf bifurcation line.

Contribution of off-resonant states to the phase noise of quantum dot lasers.

The phase noise of quantum dot lasers is investigated theoretically by coupling the Langevin noise sources into the rate equations. The off-resonant populations in the excited state and in the carrier reservoir contribute to the phase noise of ground-state emission lasers through the phase-amplitude coupling effect. This effect arises from the optical-noise induced carrier fluctuations in the off-resonant states. In addition, the phase noise has low sensitivity to the carrier scattering rates.

Chaotic light at mid-infrared wavelength.

The onset of nonlinear dynamics and chaos is evidenced in a mid-infrared distributed feedback quantum cascade laser both in the temporal and frequency domains. As opposed to the commonly observed route to chaos in semiconductor lasers, which involves undamping of the laser relaxation oscillations, quantum cascade lasers first exhibit regular self-pulsation at the external cavity frequency before entering into a chaotic low-frequency fluctuation regime. The bifurcation sequence, similar to that already observed in class A gas lasers under optical feedback, results from the fast carrier relaxation dynamics occurring in quantum cascade lasers, as confirmed by numerical simulations. Such chaotic behavior can impact various practical applications including spectroscopy, which requires stable single-mode operation. It also allows the development of novel mid-infrared high-power chaotic light sources, thus enabling secure free-space high bit-rate optical communications based on chaos synchronization.