Stretchable PPG sensor with light polarization for physical activity-permissible monitoring.

Skin-attachable sensors, which represent the ultimate form of wearable electronic devices that ensure conformal contact with skin, suffer from motion artifact limitations owing to relative changes in position between the sensor and skin during physical activities. In this study, a polarization-selective structure of a skin-conformable photoplethysmographic (PPG) sensor was developed to decrease the amount of scattered light from the epidermis, which is the main cause of motion artifacts. The motion artifacts were suppressed more than 10-fold in comparison with those of rigid sensors. The developed sensor-with two orthogonal polarizers-facilitated successful PPG signal monitoring during wrist angle movements corresponding to high levels of physical activity, enabling continuous monitoring of daily activities, even while exercising for personal health care.

Standalone real-time health monitoring patch based on a stretchable organic optoelectronic system.

Skin-like health care patches (SHPs) are next-generation health care gadgets that will enable seamless monitoring of biological signals in daily life. Skin-conformable sensors and a stretchable display are critical for the development of standalone SHPs that provide real-time information while alleviating privacy concerns related to wireless data transmission. However, the production of stretchable wearable displays with sufficient pixels to display this information remains challenging. Here, we report a standalone organic SHP that provides real-time heart rate information. The 15-µm-thick SHP comprises a stretchable organic light-emitting diode display and stretchable organic photoplethysmography (PPG) heart rate sensor on all-elastomer substrate and operates stably under 30% strain using a combination of stress relief layers and deformable micro-cracked interconnects that reduce the mechanical stress on the active optoelectronic components. This approach provides a rational strategy for high-resolution stretchable displays, enabling the production of ideal platforms for next-generation wearable health care electronics.

Facile and Microcontrolled Blade Coating of Organic Semiconductor Blends for Uniaxial Crystal Alignment and Reliable Flexible Organic Field-Effect Transistors.

The ability to fabricate uniform and high-quality patterns of organic semiconductors using a simple method is necessary to realize high-performance and reliable organic field-effect transistors (OFETs) for practical applications. Here, we report the facile fabrication of chemically patterned substrates in order to provide solvent wetting/dewetting regions and grow patterned crystals during blade coating of a small-molecule semiconductor/insulating polymer blend solution. Polyurethane acrylate is selected as the solvent dewetting material, not only because of its hydrophobicity but also because its patterns are easily produced by selective UV irradiation onto precursor films. 6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-PEN) crystal patterns are grown on the line-shaped wetting regions of the patterned film, and the crystallinity of TIPS-PEN and alignment of molecules are found using various crystal analysis tools depending on the pattern widths. The smallest width of 5 µm yielded an OFET showing the highest field-effect mobility value of 1.63 cm2/(V·s), which is much higher than the value of the OFET based on the unpatterned TIPS-PEN crystal. Notably, we demonstrate flexible and low-voltage-operating OFETs for practical use of the patterned crystals, and the OFETs show highly stable operation under sustained gate bias stress thanks to the patterned crystals.

Pronounced Side Chain Effects in Triple Bond-Conjugated Polymers Containing Naphthalene Diimides for n-Channel Organic Field-Effect Transistors.

Three triple bond-conjugated naphthalene diimide (NDI) copolymers, poly{[ N, N'-bis(2-R1)-naphthalene-1,4,5,8-bis(dicarboximide)-2,6-diyl]- alt-[(2,5-bis(2-R2)-1,4-phenylene)bis(ethyn-2,1-diyl)]} (PNDIR1-R2), were synthesized via Sonogashira coupling polymerization with varying alkyl side chains at the nitrogen atoms of the imide ring and 2,5-positions of the 1,4-diethynylbenzene moiety. Considering their identical polymer backbone structures, the side chains were found to have a strong influence on the surface morphology/nanostructure, thus playing a critical role in charge-transporting properties of the three NDI-based copolymers. Among the polymers, the one with an octyldodecyl (OD) chain at the nitrogen atoms of imide ring and a hexadecyloxy (HO) chain at the 2,5-positions of 1,4-diethynylbenzene, P(NDIOD-HO), exhibited the highest electron mobility of 0.016 cm2 V-1 s-1, as compared to NDI-based copolymers with an ethylhexyl chain at the 2,5-positions of 1,4-diethynylbenzene. The enhanced charge mobility in the P(NDIOD-HO) layers is attributed to the well-aligned nano-fiber-like surface morphology and highly ordered packing structure with a dominant edge-on orientation, thus enabling efficient in-plane charge transport. Our results on the molecular structure-charge transport property relationship in these materials may provide an insight into novel design of n-type conjugated polymers for applications in the organic electronics of the future.

Nanowires: A Lattice-Strained Organic Single-Crystal Nanowire Array Fabricated via Solution-Phase Nanograting-Assisted Pattern Transfer for Use in High-Mobility Organic Field-Effect Transistors (Adv. Mater. 16/2016).

S. H. Kim, S. G. Hahm, C. E. Park, and co-workers fabricate a 50 nm-wide organic single-crystalline nanowire array on a centimeter-sized substrate via a facile roll-to-plate process, as described on page 3209. Nanowire growth in a nano-confined space adopts a lattice-strained and single-crystalline packing motif, which can be harnessed for strong intermolecular electronic coupling. Thus, nanowire-based field-effect transistors show extremely high field-effect mobilities up to 9.71 cm(2) V(-1) s(-1) .

A Lattice-Strained Organic Single-Crystal Nanowire Array Fabricated via Solution-Phase Nanograting-Assisted Pattern Transfer for Use in High-Mobility Organic Field-Effect Transistors.

A 50 nm-wide 6,13-bis(triisopropylsilylethynyl) pentacene nanowire (NW) array is fabricated on a centimeter-sized substrate via a facile nanograting-assisted pattern-transfer method. NW growth under a nanoconfined space adopts a lattice-strained packing motif of the NWs for strong intermolecular electronic coupling, and thus a NW-based organic field-effect transistor shows high field-effect mobility up to 9.71 cm(2) V(-1) s(-1) .

Programmable bipolar and unipolar nonvolatile memory devices based on poly(2-(N-carbazolyl)ethyl methacrylate) end-capped with fullerene.

A novel polymer, poly(2-(N -carbazolyl)ethyl methacrylate) end-capped with fullerene (PCzMA-C(60) ), has been synthesized via living anionic polymerization. Electrically programmable flash memory devices were easily fabricated with this polymer by using solution coating and metal deposition. This polymer was found in these devices to exhibit bipolar and unipolar switching behaviors with a high ON/OFF current ratio, a long retention time, high reliability, and low power consumption. The excellent properties and easy processability of this polymer open up the possibility of the mass production of high performance nonvolatile memory devices at low cost.

Programmable permanent data storage characteristics of nanoscale thin films of a thermally stable aromatic polyimide.

We have synthesized a new thermally and dimensionally stable polyimide, poly(4,4'-amino(4-hydroxyphenyl)diphenylene hexafluoroisopropylidenediphthalimide) (6F-HTPA PI). 6F-HTPA PI is soluble in organic solvents and is thus easily processed with conventional solution coating techniques to produce good quality nanoscale thin films. Devices fabricated with nanoscale thin PI films with thicknesses less than 77 nm exhibit excellent unipolar write-once-read-many-times (WORM) memory behavior with a high ON/OFF current ratio of up to 10(6), a long retention time and low power consumption, less than +/-3.0 V. Furthermore, these WORM characteristics were found to persist even at high temperatures up to 150 degrees C. The WORM memory behavior was found to be governed by trap-limited space-charge limited conduction and local filament formation. The conduction processes are dominated by hole injection. Thus the hydroxytriphenylamine moieties of the PI polymer might play a key role as hole trapping sites in the observed WORM memory behavior. The properties of 6F-HTPA PI make it a promising material for high-density and very stable programmable permanent data storage devices with low power consumption.

Nonvolatile unipolar and bipolar bistable memory characteristics of a high temperature polyimide bearing diphenylaminobenzylidenylimine moieties.

This study reports the synthesis and properties (in particular, the electrical switching characteristics) of a new high-performance polyimide (PI), poly(3,3'-di(4-(diphenylamino)benzylidenyliminoethoxy)-4,4'-biphenylene hexafluoroisopropylidenediphthalimide) (6F-HAB-TPAIE PI). This PI polymer bears diphenylaminobenzylidenylimine moieties as side groups and is dimensionally stable up to 280 degrees C and thermally stable up to 440 degrees C. In devices fabricated with the PI polymer as an active memory layer, the active PI polymer was found to operate at less than +/-2 V in electrically bistable unipolar and bipolar switching modes by controlling the compliance current. The PI polymer layer exhibits repeatable writing-reading-erasing capability with high reliability in ambient air conditions as well as at high temperatures up to 130 degrees C. This PI polymer also exhibits a high ON/OFF current ratio up to 10(9). The observed nonvolatile memory behaviors are due to Schottky emission and local filament formation. This study has demonstrated that this thermally, dimensionally stable PI polymer is a promising material for mass production at low cost for high-performance, programmable, nonvolatile memory devices that can be operated with low power consumption in unipolar and bipolar switching modes.

Programmable digital memory devices based on nanoscale thin films of a thermally dimensionally stable polyimide.

We have fabricated electrically programmable memory devices with thermally and dimensionally stable poly(N-(N',N'-diphenyl-N'-1,4-phenyl)-N,N-4,4'-diphenylene hexafluoroisopropylidene-diphthalimide) (6F-2TPA PI) films and investigated their switching characteristics and reliability. 6F-2TPA PI films were found to reveal a conductivity of 1.0 x 10(-13)-1.0 x 10(-14) S cm(-1). The 6F-2TPA PI films exhibit versatile memory characteristics that depend on the film thickness. All the PI films are initially present in the OFF state. The PI films with a thickness of >15 to <100 nm exhibit excellent write-once-read-many-times (WORM) (i.e. fuse-type) memory characteristics with and without polarity depending on the thickness. The WORM memory devices are electrically stable, even in air ambient, for a very long time. The devices' ON/OFF current ratio is high, up to 10(10). Therefore, these WORM memory devices can provide an efficient, low-cost means of permanent data storage. On the other hand, the 100 nm thick PI films exhibit excellent dynamic random access memory (DRAM) characteristics with polarity. The ON/OFF current ratio of the DRAM devices is as high as 10(11). The observed electrical switching behaviors were found to be governed by trap-limited space-charge-limited conduction and local filament formation and further dependent on the differences between the highest occupied molecular orbital and the lowest unoccupied molecular orbital energy levels of the PI film and the work functions of the top and bottom electrodes as well as the PI film thickness. In summary, the excellent memory properties of 6F-2TPA PI make it a promising candidate material for the low-cost mass production of high density and very stable digital nonvolatile WORM and volatile DRAM memory devices.

UV-driven switching of chain orientation and liquid crystal alignment in nanoscale thin films of a novel polyimide bearing stilbene moieties in the backbone.

A novel photosensitive polyimide, poly(4,4'-stilbenylene 4,4'-oxidiphthalimide) (ODPA-Stilbene PSPI) was newly synthesized. The most surprising feature of this PSPI is that the PSPI films irradiated with linear polarized ultraviolet light (LPUVL) can favorably induce a unidirectional alignment of liquid crystals (LCs) in contact with the film surface and further switch the director of the unidirectionally aligned LCs from a perpendicular direction to a parallel direction with respect to the polarization direction of LPUVL by simply controlling the exposure dose in the irradiation process. These LPUVL-irradiated films were found to provide high anchoring energy to LCs, always giving very stable, homogeneous cells with unidirectionally aligned LCs regardless of the LC alignment directions. In the films, the PSPI polymer chains were found to undergo favorably unidirectional orientation via a specific orientation sequence of the polymer chain segments led by the directionally selective trans-cis photoisomerization of the stilbene chromophore units in the backbone induced by LPUVL exposure. Such unidirectionally oriented polymer chains of the films induce alignment of the LCs along the orientation direction of the polymer chains via favorable anisotropic molecular interactions between the oriented polymer chain segments and the LC molecules. In addition, the PSPI has an excellent film formation processibility; good quality PSPI thin films with a smooth surface are easily produced by simple spin-coating of the soluble poly(amic acid) precursor and subsequent thermal imidization process. In summary, this new PSPI is the promising LC alignment layer candidate with rubbing-free processing for the production of advanced LC display devices, including LC display televisions with large display areas.