Stability and Equilibrium Structures of Unknown Ternary Metal Oxides Explored by Machine-Learned Potentials.

Ternary metal oxides are crucial components in a wide range of applications and have been extensively cataloged in experimental materials databases. However, there still exist cation combinations with unknown stability and structures of their compounds in oxide forms. In this study, we employ extensive crystal structure prediction methods, accelerated by machine-learned potentials, to investigate these untapped chemical spaces. We examine 181 ternary metal oxide systems, encompassing most cations except for partially filled 3d or f shells, and determine their lowest-energy crystal structures with representative stoichiometry derived from prevalent oxidation states or recommender systems. Consequently, we discover 45 ternary oxide systems containing stable compounds against decomposition into binary or elemental phases, the majority of which incorporate noble metals. Comparisons with other theoretical databases highlight the strengths and limitations of informatics-based material searches. With a relatively modest computational resource requirement, we contend that heuristic-based structure searches, as demonstrated in this study, offer a promising approach for future materials discovery endeavors.

Reconfigurable Manipulation of Oxygen Content on Metal Oxide Surfaces and Applications to Gas Sensing.

Oxygen vacancies and adsorbed oxygen species on metal oxide surfaces play important roles in various fields. However, existing methods for manipulating surface oxygen require severe settings and are ineffective for repetitive manipulation. We present a method to manipulate the amount of surface oxygen by modifying the oxygen adsorption energy by electrically controlling the electron concentration of the metal oxide. The surface oxygen control ability of the method is verified using first-principles calculations based on density functional theory (DFT), X-ray photoelectron spectroscopy (XPS), and electrical resistance analysis. The presented method is implemented by fabricating oxide thin film transistors with embedded microheaters. The method can reconfigure the oxygen vacancies on the In2O3, SnO2, and IGZO surfaces so that specific chemisorption dominates. The method can selectively increase oxidizing (e.g., NO and NO) and reducing gas (e.g., H2S, NH3, and CO) reactions by electrically controlling the metal oxide surface to be oxygen vacancy-rich or adsorbed oxygen species-rich. The proposed method is applied to gas sensors and overcomes their existing limitations. The method makes the sensor insensitive to one gas (e.g., H2S) in mixed-gas environments (e.g., NO2+H2S) and provides a linear response (R2 = 0.998) to the target gas (e.g., NO2) concentration within 3 s. We believe that the proposed method is applicable to applications utilizing metal oxide surfaces.

Investigation of the mechanism of the anomalous Hall effects in Cr2Te3/(BiSb)2(TeSe)3 heterostructure.

The interplay between ferromagnetism and the non-trivial topology has unveiled intriguing phases in the transport of charges and spins. For example, it is consistently observed the so-called topological Hall effect (THE) featuring a hump structure in the curve of the Hall resistance (Rxy) vs. a magnetic field (H) of a heterostructure consisting of a ferromagnet (FM) and a topological insulator (TI). The origin of the hump structure is still controversial between the topological Hall effect model and the multi-component anomalous Hall effect (AHE) model. In this work, we have investigated a heterostructure consisting of BixSb2-xTeySe3-y (BSTS) and Cr2Te3 (CT), which are well-known TI and two-dimensional FM, respectively. By using the so-called "minor-loop measurement", we have found that the hump structure observed in the CT/BSTS is more likely to originate from two AHE channels. Moreover, by analyzing the scaling behavior of each amplitude of two AHE with the longitudinal resistivities of CT and BSTS, we have found that one AHE is attributed to the extrinsic contribution of CT while the other is due to the intrinsic contribution of BSTS. It implies that the proximity-induced ferromagnetic layer inside BSTS serves as a source of the intrinsic AHE, resulting in the hump structure explained by the two AHE model.

In-Memory-Computed Low-Frequency Noise Spectroscopy for Selective Gas Detection Using a Reducible Metal Oxide.

Concerns about indoor and outdoor air quality, industrial gas leaks, and medical diagnostics are driving the demand for high-performance gas sensors. Owing to their structural variety and large surface area, reducible metal oxides hold great promise for constructing a gas-sensing system. While many earlier reports have successfully obtained a sufficient response to various types of target gases, the selective detection of target gases remains challenging. In this work, a novel method, low-frequency noise (LFN) spectroscopy is presented, to achieve selective detection using a single FET-type gas sensor. The LFN of the sensor is accurately modeled by considering the charge fluctuation in both the sensing material and the FET channel. Exposure to different target gases produces distinct corner frequencies of the power spectral density that can be used to achieve selective detection. In addition, a 3D vertical-NAND flash array is used with the fast Fourier transform method via in-memory-computing, significantly improving the area and power efficiency rate. The proposed system provides a novel and efficient method capable of selectively detecting a target gas using in-memory-computed LFN spectroscopy and thus paving the way for the further development in gas sensing systems.

First-Principles Calculations of Luminescence Spectra of Real-Scale Quantum Dots.

The luminescence line shape is an important feature of semiconductor quantum dots (QDs) and affects performance in various optical applications. Here, we report a first-principles method to predict the luminescence spectrum of thousands of atom QDs. In our approach, neural network potential calculations are combined with density functional theory calculations to describe exciton-phonon coupling (EPC). Using the calculated EPC, the luminescence spectrum is evaluated within the Franck-Condon approximation. Our approach results in the luminescence line shape for an InP/ZnSe core/shell QD (3406 atoms) that exhibits excellent agreement with the experiments. From a detailed analysis of EPC, we reveal that the coupling of both acoustic and optical phonons to an exciton are important in determining the spectral line shapes of core/shell QDs, which is in contrast with previous studies. On the basis of the present simulation results, we provide guidelines for designing high-performance core/shell QDs with ultrasharp emission spectra.

Identification of Active Sites for CO2 Reduction on Graphene-Supported Single-Atom Catalysts.

Transition metal- and nitrogen-codoped graphene (referred to as M-N-G, where M is a transition metal) has emerged as an important type of single-atom catalysts with high selectivities and activities for electrochemical CO2 reduction (CO2 R) to CO. However, despite extensive previous studies on the catalytic origin, the active site in M-N-G catalysts remains puzzling. In this study, density functional theory calculations and computational hydrogen electrode model is used to investigate CO2 R reaction energies on Zn-N-G, which exhibits outstanding catalytic performance, and to examine kinetic barriers of reduction reactions by using the climbing image nudged elastic band method. We find that single Zn atoms binding to N and C atoms in divacancy sites of graphene cannot serve as active sites to enable CO production, owing to *OCHO formation (* denotes an adsorbate) at an initial protonation process. This contradicts the widely accepted CO2 R mechanism whereby single metal atoms are considered catalytic sites. In contrast, the C atom that is the nearest neighbor of the single Zn atom (CNN ) is found to be highly active and the Zn atom plays a role as an enhancer of the catalytic activity of the CNN . Detailed analysis of the CO2 R pathway to CO on the CNN site reveals that *COOH is favorably formed at an initial electrochemical step, and every reaction step becomes downhill in energy at small applied potentials of about -0.3 V with respect to reversible hydrogen electrode. Electronic structure analysis is also used to elucidate the origin of the CO2 R activity of the CNN site.

Correction: Suppression of metal-to-insulator transition using strong interfacial coupling at cubic and orthorhombic perovskite oxide heterointerfaces.

Correction for 'Suppression of metal-to-insulator transition using strong interfacial coupling at cubic and orthorhombic perovskite oxide heterointerfaces' by Woonbae Sohn et al., Nanoscale, 2021, 13, 708-715, DOI: 10.1039/D0NR07545K.

A band-gap database for semiconducting inorganic materials calculated with hybrid functional.

Semiconducting inorganic materials with band gaps ranging between 0 and 5 eV constitute major components in electronic, optoelectronic and photovoltaic devices. Since the band gap is a primary material property that affects the device performance, large band-gap databases are useful in selecting optimal materials in each application. While there exist several band-gap databases that are theoretically compiled by density-functional-theory calculations, they suffer from computational limitations such as band-gap underestimation and metastable magnetism. In this data descriptor, we present a computational database of band gaps for 10,481 materials compiled by applying a hybrid functional and considering the stable magnetic ordering. For benchmark materials, the root-mean-square error in reference to experimental data is 0.36 eV, significantly smaller than 0.75-1.05 eV in the existing databases. Furthermore, we identify many small-gap materials that are misclassified as metals in other databases. By providing accurate band gaps, the present database will be useful in screening materials in diverse applications.

Antiperovskite Oxides as Promising Candidates for High-Performance Ferroelectric Photovoltaics: First-Principles Investigation on Ba4As2O and Ba4Sb2O.

Owing to polarization-driven efficient charge carrier separation, ferroelectric semiconductors with narrow band gaps (∼1.3 eV) can constitute an ideal active layer for photovoltaics (PVs), as demonstrated in recent studies on lead halide perovskite solar cells. In this study, antiperovskite oxides with a composition of Ba4Pn2O (Pn = As or Sb) are proposed as promising candidates for high-performance ferroelectric PVs. Using density functional theory calculations, it is revealed that Ba4Pn2O exhibits moderate macroscopic polarization enough for charge carrier separation. Moreover, they are predicted to have direct band gaps close to the optimal Shockley-Queisser value. By investigating optical absorption coefficients and resulting short-circuit currents, it is demonstrated that a very thin layer of Ba4Pn2O can yield large photocurrents. The effective masses of charge carriers in Ba4Pn2O are found to be fairly small (<0.2me), implying facile extraction of photocarriers. The favorable simulation results along with the confirmed synthesizability of the materials strongly suggest that Ba4Pn2O will be an active layer suitable for PVs.

Adatom Doping of Transition Metals in ReSe2 Nanosheets for Enhanced Electrocatalytic Hydrogen Evolution Reaction.

Two-dimensional Re dichalcogenide nanostructures are promising electrocatalysts for the hydrogen evolution reaction (HER). Herein, we report the adatom doping of various transition metals (TM = Mn, Fe, Co, Ni, and Cu) in ReSe2 nanosheets synthesized using a solvothermal reaction. As the atomic number of TM increases from Mn to Cu, the adatoms on Re sites become more favored over the substitution. In the case of Ni, the fraction of adatoms reaches 90%. Ni doping resulted in the most effective enhancement in the HER catalytic performance, which was characterized by overpotentials of 82 and 109 mV at 10 mA cm-2 in 0.5 M H2SO4 and 1 M KOH, respectively, and the Tafel slopes of 54 and 81 mV dec-1. First-principles calculations predicted that the adatom doping structures (TMs on Re sites) have higher catalytic activity compared with the substitution ones. The adsorbed H atoms formed a midgap hybridized state via direct bonding with the orbitals of TM adatom. The present work provides a deeper understanding into how TM doping can provide the catalytically active sites in these ReSe2 nanosheets.

Efficient Atomic-Resolution Uncertainty Estimation for Neural Network Potentials Using a Replica Ensemble.

Neural network potentials (NNPs) are gaining much attention as they enable fast molecular dynamics (MD) simulations for a wide range of systems while maintaining the accuracy of density functional theory calculations. Since NNP is constructed by machine learning on training data, its prediction uncertainty increases drastically as atomic environments deviate from training points. Therefore, it is essential to monitor the uncertainty level during MD simulations to judge the soundness of the results. In this work, we propose an uncertainty estimator based on the replica ensemble in which NNPs are trained over atomic energies of a reference NNP that drives MD simulations. The replica ensemble is trained quickly, and its standard deviation provides atomic-resolution uncertainties. We apply this method to a highly reactive silicidation process of Si(001) overlaid with Ni thin films and confirm that the replica ensemble can spatially and temporally trace simulation errors at atomic resolution, which in turn guides the augmentation of the training set. The refined NNP completes a 3.6 ns simulation without any noticeable problems. By suggesting an efficient and atomic-resolution uncertainty indicator, this work will contribute to achieving reliable MD simulations by NNPs.

Fundamental Limit of the Emission Linewidths of Quantum Dots: An Ab Initio Study of CdSe Nanocrystals.

The emission linewidth of a semiconducting nanocrystal (NC) significantly affects its performance in light-emitting applications, but its fundamental limit is still elusive. Herein, we analyze the exciton-phonon coupling (EPC) from Huang-Rhys (HR) factors using ab initio calculations and compute emission line shapes of CdSe NCs. When surface traps are absent, acoustic modes are found to dominate EPC. The computed linewidths are mainly determined by the size of NCs, being largely insensitive to the shape and crystal structure. Linewidths obtained in this work are much smaller than most measurements on homogeneous linewidths, but they are consistent with a CdSe/CdxZn1-xSe (core/shell) NC [Park, Y.-S.; Lim, J.; Klimov, V. I. Nat. Mater. 2019 18, 249-255]. Based on this comparison, it is concluded that the large linewidths in most experiments originated from internal fields by surface (or interface) traps or quasi-type II band alignment that amplifies EPC. Thus, the present results on NCs with ideal passivation provide the fundamental minimum of homogeneous linewidths, indicating that only the CdSe/CdxZn1-xSe NC has achieved this limit through well-controlled synthesis of shell structures. To further verify the role of internal fields, we model NCs with charged surface defects. We find that the internal field significantly increases HR factors and linewidths, in reasonable agreement with experiments on single cores. By revealing the fundamental limit of the emission linewidths of quantum dots, this work will pave the way for engineering quantum dots with an ultrasharp spectrum.

Effects of the Heterointerface on the Growth Characteristics of a Brownmillerite SrFeO2.5 Thin Film Grown on SrRuO3 and SrTiO3 Perovskites.

Manipulation of the heterointerfacial structure and/or chemistry of transition metal oxides is of great interest for the development of novel properties. However, few studies have focused on heterointerfacial effects on the growth characteristics of oxide thin films, although such interfacial engineering is crucial to determine the growth dynamics and physical properties of oxide heterostructures. Herein, we show that heterointerfacial effects play key roles in determining the growth process of oxide thin films by overcoming the simple epitaxial strain energy. Brownmillerite (SrFeO2.5; BM-SFO) thin films are epitaxially grown along the b-axis on both SrTiO3(001) and SrRuO3/SrTiO3(001) substrates, whereas growth along the a-axis is expected from conventional epitaxial strain effects originating from lattice mismatch with the substrates. Scanning transmission electron microscopy measurements and first principles calculations reveal that these peculiar growth characteristics of BM-SFO thin films originate from the heterointerfacial effects governed by their distinct interfacial structures. These include octahedral connectivity between dissimilar oxides containing different chemical species and a peculiar transition layer for BM-SFO/SrRuO3/SrTiO3(001) and BM-SFO/SrTiO3(001) heterostructures, respectively. These effects enable subtle control of the growth process of oxide thin films and could facilitate the fabrication of novel functional devices.

Anion Extraction-Induced Polymorph Control of Transition Metal Dichalcogenides.

Controlled phase conversion in polymorphic transition metal dichalcogenides (TMDs) provides a new synthetic route for realizing tunable nanomaterials. Most conversion methods from the stable 2H to metastable 1T phase are limited to kinetically slow cation insertion into atomically thin layered TMDs for charge transfer from intercalated ions. Here, we report that anion extraction by the selective reaction between carbon monoxide (CO) and chalcogen atoms enables predictive and scalable TMD polymorph control. Sulfur vacancy, induced by anion extraction, is a key factor in molybdenum disulfide (MoS2) polymorph conversion without cation insertion. Thermodynamic MoS2-CO-CO2 ternary phase diagram offers a processing window for efficient sulfur vacancy formation with precisely controlled MoS2 structures from single layer to multilayer. To utilize our efficient phase conversion, we synthesize vertically stacked 1T-MoS2 layers in carbon nanofibers, which exhibit highly efficient hydrogen evolution reaction catalytic activity. Anion extraction induces the polymorph conversion of tungsten disulfide (WS2) from 2H to 1T. This reveals that our method can be utilized as a general polymorph control platform. The versatility of the gas-solid reaction-based polymorphic control will enable the engineering of metastable phases in 2D TMDs for further applications.

Lanthanum Doping Enabling High Drain Current Modulation in a p-Type Tin Monoxide Thin-Film Transistor.

Effects of lanthanum (La) loading on the structural, optical, and electrical properties of tin monoxide (SnO) films were examined as a p-type semiconducting layer. La loading up to 1.9 atom % caused the texturing of the tetragonal SnO phase with a preferential orientation of (101), which was accompanied by the smoother surface morphology. Simultaneously, the incorporated La cation suppressed the formation of n-type SnO2 in the La-doped SnO film and widened its optical band gap. These variations allowed the 1.9 atom % La-loaded SnO film to have a high hole mobility and carrier density, compared with the La-free control SnO film. The superior semiconducting property was reflected in the p-type thin-film transistor (TFT). The control SnO TFTs exhibited the field-effect mobility (µSAT) and ION/OFF ratio of 0.29 cm2 V-1 s-1 and 5.4 × 102, respectively. Enhancement in the µSAT value and ION/OFF ratio was observed for the TFTs with the 1.9 atom % La-loaded SnO channel layer: they were improved to 1.2 cm2 V-1 s-1 and 7.3 × 103, respectively. The reason for this superior performance was discussed on the basis of smoother morphology, suppression of disproportionation conversion from Sn2+ to Sn + Sn4+, and reduced gap-state density.

Material Design of New p-Type Tin Oxyselenide Semiconductor through Valence Band Engineering and Its Device Application.

This paper reports a new p-type tin oxyselenide (SnSeO), which was designed with the concept that the valence band edge from O 2p orbitals in the majority of metal oxides becomes delocalized by hybridizing Se 4p and Sn 5s orbitals. As the Se loading increased, the SnSeO film structures were transformed from tetragonal SnO to orthorhombic SnSe, which was accompanied by an increase in the amorphous phase portion and smooth morphologies. The SnSe0.56O0.44 film annealed at 300 °C exhibited the highest Hall mobility (µHall), 15.0 cm2 (V s)-1, and hole carrier density (nh), 1.2 × 1017 cm-3. The remarkable electrical performance was explained by the low hole effective mass, which was calculated by a first principle calculation. Indeed, the fabricated field-effect transistor (FET) with a p-channel SnSe0.56O0.44 film showed the high field-effect mobility of 5.9 cm2 (V s)-1 and an ION/OFF ratio of 3 × 102. This work demonstrates that anion alloy-based hybridization provides a facile route to the realization of a high-performance p-channel FET and complementary devices.

Two-Dimensional NbS2 Gas Sensors for Selective and Reversible NO2 Detection at Room Temperature.

Transition metal dichalcogenides (TMDs) have attracted enormous attention in diverse research fields. Especially, gas sensors are considered in a promising application exploiting TMDs. However, the studies are confined to only major TMDs such as MoS2 and WS2. Particularly, the chemoresistive sensing properties of two-dimensional (2D) NbS2 have never been explored. For the first time, we report room temperature NO2 sensing characteristics of 2D NbS2 nanosheets and the sensing mechanisms using first-principles calculations based on density functional theory. The results demonstrate that the NbS2 edges possessing different configurations depending on synthetic conditions differ in the sensing ability of the TMD nanosheets. This study not only broadens the potential of 2D NbS2 for gas sensing applications, but also presents the important role of edge configuration of TMDs depending on synthetic conditions for further studies.

Unveiling Electrochemical Reaction Pathways of CO2 Reduction to CN Species at S-Vacancies of MoS2.

Although C1 species such as CO and CH4 constitute the majority of CO2 reduction (CO2 R) products on known catalysts, recent experiments showed that 1-propanol with two C-C bonds is produced as the main CO2 R product on MoS2 single crystals in aqueous electrolytes. Herein, the CO2 R mechanism on MoS2 is investigated by using first-principle calculations. Focusing on S-vacancies (VS ) as the catalytic site, potential free-energy pathways to various CO2 R products are obtained by means of a computational hydrogen electrode model. The results underline the role of HCHO, which is one of the elemental C1 products, in opening pathways to CN species for N>1. Key steps to increase C-C bonds are the adsorption of HCHO at the VS site and binding of another HCHO to the adsorbed one. The predicted products and theoretical working potentials to open their pathways are consistent with experiments, which indicates that VS is an important active site for CO2 R on the MoS2 basal plane.