Low-loss SiGe waveguides for mid-infrared photonics fabricated on 200 mm wafers.

This article presents low-loss mid-infrared waveguides fabricated on a Ge-rich SiGe strain-relaxed buffer grown on an industrial-scale 200 mm wafer, with propagation losses below 0.5 dB/cm for 5-7 µm wavelengths and below 5 dB/cm up to 11 µm. Investigation reveals free-carrier absorption as the primary loss factor for 5-6.5 µm and silicon multiphonon absorption beyond 7 µm wavelength. This result establishes a foundation for a scalable, silicon-compatible mid-infrared platform, enabling the realisation of photonic integrated circuits for various applications in the mid-infrared spectral region, from hazard detection to spectroscopy and military imaging.

Highly C-oriented (002) plane ZnO nanowires synthesis.

Nanowires are widely used for energy harvesting, sensors, and solar cells. We report a study on the role of buffer layer in the growth of zinc oxide (ZnO) nanowires (NWs) synthesised by a chemical bath deposition (CBD) method. To control the thickness of the buffer layer, multilayer coatings corresponding to one layer (100 nm thick), three layers (300 nm thick), and six layers (600 nm thick) of ZnO sol-gel thin-films were used. The evolution of the morphology and structure of ZnO NWs was characterized by scanning electron microscopy, X-ray diffraction, photoluminescence, and Raman spectroscopy. Highly C-oriented ZnO (002)-oriented NWs were obtained on both substrates, silicon and ITO, when the thickness of the buffer layer was increased. The role of ZnO sol-gel thin films used as a buffer layer for the growth of ZnO NWs with (002)-oriented grains also resulted in a significant change in surface morphology on both substrates. The successful deposition of ZnO NWs on a variety of substrates, as well as the promising results, open up a wide range of applications.

Electrical and Optical Characterization of SAW Sensors Coated with Parylene C and Their Analysis Using the Coupling-of-Modes (COM) Theory.

In this paper, we present how complementary characterization techniques, such as electrical measurements with a vector network analyzer (VNA), optical measurements with a laser Doppler vibrometer (LDV), and numerical simulations with the finite element method, coupled with spectral domain analysis (FEMSDA), allow us to independently access different properties of a SAW device and fully characterize its operation using the coupling-of-modes theory (COM). A set of chemical SAW sensors coated with parylene C layers of different thicknesses (1, 1.5, and 2 µm) and an uncoated sensor were used as test samples. The sensors represent dual-channel electroacoustic delay lines operating in the vicinity of 77 MHz. The IDTs consist of split aluminum electrodes deposited on a AT-cut quartz substrate. The thickness-dependent influence of the parylene C layer was observed on the operating frequency (SAW velocity), static capacitance, attenuation, crosstalk, and reflection coefficient. COM parameters were reported for the four cases considered; measured and simulated data show good agreement. The presented approach is suitable for the design, characterization, and validation of polymer film-coated SAW sensors.

Electric-Field-Induced Phase Change in Copper Oxide Nanostructures.

Transition-metal oxides such as cupric and cuprous oxides are strongly correlated materials made of earth-abundant chemical elements displaying energy band gaps of around 1.2 and 2.1 eV. The ability to design nanostructures of cupric and cuprous oxide semiconductors with in situ phase change and morphological transition will benefit several applications including photovoltaic energy conversion and photoelectrochemical water splitting. Here, we have developed a physicochemical route to synthesize copper oxide nanostructures, enabling the phase change of cupric oxide into cuprous oxide using an electric field of 105 V/m in deionized water via a new synthetic design protocol called electric-field-assisted pulsed laser ablation in liquids (EFA-PLAL). The morphology of the nanostructures can also be tuned from a sphere of ∼20 nm to an elongated leaf of ∼3 µm by controlling the intensity of the applied electric field. Futuristically, the materials chemistry occurring during the EFA-PLAL synthesis protocol developed here can be leveraged to design various strongly correlated nanomaterials and heterostructures of other 3d transition-metal oxides.

GeSnOI mid-infrared laser technology.

GeSn alloys are promising materials for CMOS-compatible mid-infrared lasers manufacturing. Indeed, Sn alloying and tensile strain can transform them into direct bandgap semiconductors. This growing laser technology however suffers from a number of limitations, such as poor optical confinement, lack of strain, thermal, and defects management, all of which are poorly discussed in the literature. Herein, a specific GeSn-on-insulator (GeSnOI) stack using stressor layers as dielectric optical claddings is demonstrated to be suitable for a monolithically integration of planar Group-IV semiconductor lasers on a versatile photonic platform for the near- and mid-infrared spectral range. Microdisk-shape resonators on mesa structures were fabricated from GeSnOI, after bonding a Ge0.9Sn0.1 alloy layer grown on a Ge strain-relaxed-buffer, itself on a Si(001) substrate. The GeSnOI microdisk mesas exhibited significantly improved optical gain as compared to that of conventional suspended microdisk resonators formed from the as-grown layer. We further show enhanced vertical out-coupling of the disk whispering gallery mode in-plane radiation, with up to 30% vertical out-coupling efficiency. As a result, the GeSnOI approach can be a valuable asset in the development of silicon-based mid-infrared photonics that combine integrated sources in a photonic platform with complex lightwave engineering.

Synthesis of naked vanadium pentoxide nanoparticles.

Vanadium pentoxide is the most important vanadium compound by being the precursor to most vanadium alloys. It also plays an essential role in the production of sulfuric acid as well as in metal-ion batteries and supercapacitors. In this paper, pulsed laser ablation in liquids is used to synthesize "naked" vanadium pentoxide nanostructures. The resulting particles take up "nearly-spherical" and "flower-like" morphologies, composed of α-V2O5 and ß-V2O5 crystalline phases. Even "naked", the nanostructures are stable in time with a zeta potential of -51 ± 7 mV. In order to maximize the production of vanadium pentoxide nanostructure, the optimal repetition rate was determined to be @ ∼6600 Hz when irradiating a pure vanadium target in DI-water. This corresponds to a cavitation bubble lifetime of around ∼0.15 ms. At that repetition rate, the production reached ∼10 ppm per minute of irradiation. Finally, from the characterization of the α-V2O5 and ß-V2O5 nanostructures, the surface energy of each phase has been carefully determined at 0.308 and 1.483 J cm-2, respectively. Consequently, the ß-phase was found to display a surface energy very close to platinum. The exciton Bohr radius has been determined at 3.5 ± 0.7 nm and 2.0 ± 0.6 nm for α-V2O5 and ß-V2O5 phases, respectively.

Synthesis of ZnO sol-gel thin-films CMOS-Compatible.

Zinc oxide (ZnO) is a II-VI group semiconductor with a wide direct bandgap and is an important material for various fields of industry and high-technological applications. The effects of thickness, annealing process in N2 and air, optical properties, and morphology of ZnO thin-films are studied. A low-cost sol-gel spin-coating technique is used in this study for the simple synthesis of eco-friendly ZnO multilayer films deposited on (100)-oriented silicon substrates ranging from 150 to 600 nm by adjusting the spin coating rate. The ZnO sol-gel thin-films using precursor solutions of molarity 0.75 M exhibit an average optical transparency above 98%, with an optical band gap energy of 3.42 eV. The c-axis (002) orientation of the ZnO thin-films annealed at 400 °C were mainly influenced by the thickness of the multilayer, which is of interest for piezoelectric applications. These results demonstrate that a low-temperature method can be used to produce an eco-friendly, cost-effective ZnO sol-gel that is compatible with a complementary metal-oxide-semiconductor (CMOS) and integrated-circuits (IC).

Impact of tensile strain on low Sn content GeSn lasing.

In recent years much effort has been made to increase the Sn content in GeSn alloys in order to increase direct bandgap charge carrier recombination and, therefore, to reach room temperature lasing. While being successful for the former, the increase of Sn content is detrimental, leading to increased defect concentrations and a lower thermal budget regarding processing. In this work we demonstrate strong photoluminescence enhancement in low Sn content Ge0.94Sn0.06 layers by implementing tensile strain. Fitting of the calculated photoluminescence spectra to reproduce our experimental results indicates a strain of ~1.45%, induced via an SiNx stressor layer, which is strong enough to transform the investigated layer into a direct bandgap semiconductor. Moreover, theoretical calculations, using the 8-band k·p model, show the advantages of using low Sn content tensile strained GeSn layers in respect to gain and lasing temperature. We show that low Sn content GeSn alloys have a strong potential to enable efficient room temperature lasers on electronic-photonic integrated circuits.