The interfacial nature of proximity-induced magnetism and the Dzyaloshinskii-Moriya interaction at the Pt/Co interface.

The Dzyaloshinskii-Moriya interaction has been shown to stabilise Nèel domain walls in magnetic thin films, allowing high domain wall velocities driven by spin current effects. The interfacial Dzyaloshinskii-Moriya interaction (IDMI) occurs at the interface between ferromagnetic and heavy metal layers with strong spin-orbit coupling, but details of the interaction remain to be understood and the role of proximity induced magnetism (PIM) in the heavy metal is unknown. Here IDMI and PIM are reported in Pt determined as a function of Au and Ir spacer layers in Pt/Co/Au,Ir/Pt. Both interactions are found to be sensitive to sub-nanometre changes in the spacer thickness, correlating over sub-monolayer spacer thicknesses, but not for thicker spacers where IDMI continues to change even after PIM is lost.

Understanding the role of damping and Dzyaloshinskii-Moriya interaction on dynamic domain wall behaviour in platinum-ferromagnet nanowires.

Heavy metal layers, exemplified by Pt, are known to play a significant role in the magnetization behaviour of thin-film ferromagnets by three distinct mechanisms that can each contribute to the reversal process. These include modifying the local magnetization state via an interfacial Dzyaloshinskii-Moriya interaction (IDMI), enhancement of the damping, via d-d hybridisation and spin-pumping across the interface, and the mediation of the magnetization switching, with the flow of current through a system, via the spin-Hall effect. Here we show for a system with weak interfacial DMI (NiFe/Pt) that the measurement of magnetic field-driven magnetization reversal, mediated by domain wall (DW) motion, is dominated by the enhanced intrinsic damping contribution as a function of the Pt capping layer thickness. But, we also show micromagnetically that the IDMI and damping also combine to modify the domain wall velocity behaviour when the damping is larger. It is also noted that Walker breakdown occurs at lower fields and peak DW velocity decreases in the presence of IDMI. These results highlight the significance of the relative contributions of the damping and the IDMI from the heavy metal layer on the magnetization reversal and provide a route to controlling the DW behaviour in nanoscale device structures.

Tunable Magnetization Dynamics in Interfacially Modified Ni81Fe19/Pt Bilayer Thin Film Microstructures.

Interface modification for control of ultrafast magnetic properties using low-dose focused ion beam irradiation is demonstrated for bilayers of two technologically important materials: Ni81Fe19 and Pt. Magnetization dynamics were studied using an all-optical time-resolved magneto-optical Kerr microscopy method. Magnetization relaxation, precession, damping and the spatial coherence of magnetization dynamics were studied. Magnetization precession was fitted with a single-mode damped sinusoid to extract the Gilbert damping parameter. A systematic study of the damping parameter and frequency as a function of irradiation dose varying from 0 to 3.3 pC/µm(2) shows a complex dependence upon ion beam dose. This is interpreted in terms of both intrinsic effects and extrinsic two-magnon scattering effects resulting from the expansion of the interfacial region and the creation of a compositionally graded alloy. The results suggest a new direction for the control of precessional magnetization dynamics, and open the opportunity to optimize high-speed magnetic devices.

Interfacial Structure Dependent Spin Mixing Conductance in Cobalt Thin Films.

Enhancement of Gilbert damping in polycrystalline cobalt thin-film multilayers of various thicknesses, overlayered with copper or iridium, was studied in order to understand the role of local interface structure in spin pumping. X-ray diffraction indicates that cobalt films less than 6 nm thick have strong fcc(111) texture while thicker films are dominated by hcp(0001) structure. The intrinsic damping for cobalt thicknesses above 6 nm is weakly dependent on cobalt thickness for both overlayer materials, and below 6 nm the iridium overlayers show higher damping enhancement compared to copper overlayers, as expected due to spin pumping. The interfacial spin mixing conductance is significantly enhanced in structures where both cobalt and iridium have fcc(111) structure in comparison to those where the cobalt layer has subtly different hcp(0001) texture at the interface.

Magnetostrictive thin films for microwave spintronics.

Multiferroic composite materials, consisting of coupled ferromagnetic and piezoelectric phases, are of great importance in the drive towards creating faster, smaller and more energy efficient devices for information and communications technologies. Such devices require thin ferromagnetic films with large magnetostriction and narrow microwave resonance linewidths. Both properties are often degraded, compared to bulk materials, due to structural imperfections and interface effects in the thin films. We report the development of epitaxial thin films of Galfenol (Fe81Ga19) with magnetostriction as large as the best reported values for bulk material. This allows the magnetic anisotropy and microwave resonant frequency to be tuned by voltage-induced strain, with a larger magnetoelectric response and a narrower linewidth than any previously reported Galfenol thin films. The combination of these properties make epitaxial thin films excellent candidates for developing tunable devices for magnetic information storage, processing and microwave communications.

Spin-orbit strength driven crossover between intrinsic and extrinsic mechanisms of the anomalous hall effect in the epitaxial L1{0}-ordered ferromagnets FePd and FePt.

We determine the composition of intrinsic as well as extrinsic contributions to the anomalous Hall effect (AHE) in the isoelectronic L1_{0} FePd and FePt alloys. We show that the AHE signal in our 30 nm thick epitaxially deposited films of FePd is mainly due to an extrinsic side jump, while in the epitaxial FePt films of the same thickness and degree of order the intrinsic contribution is dominating over the extrinsic mechanisms of the AHE. We relate this crossover to the difference in spin-orbit strength of Pt and Pd atoms and suggest that this phenomenon can be used for tuning the origins of the AHE in complex alloys.

Interface induced uniaxial magnetic anisotropy in amorphous CoFeB films on AlGaAs(001).

We demonstrate an isolated magnetic interface anisotropy in amorphous CoFeB films on (Al)GaAs(001), similar to that in epitaxial films but without a magnetocrystalline anisotropy term. The direction of the easy axis corresponds to that due to the interfacial interaction proposed for epitaxial films. We show that the anisotropy is determined by the relative orbital component of the atomic magnetic moments. Charge transfer is ruled out as the origin of the interface anisotropy, and it is postulated that the spin-orbit interaction in the semiconductor is crucial in determining the magnetic anisotropy.

Direct experimental evidence for the Ruderman-Kittel-Kasuya-Yosida interaction in rare-earth metals.

We show that the ferromagnetic heavy rare-earth (RE) metals show a transport spin polarization at the Fermi level in the majority spin, whereas in ferromagnetic light rare earths it is in the minority spin. The sign of the polarization is in agreement with what is expected due to the Ruderman-Kittel-Kasuya-Yosida (RKKY) coupling formalism. We show that magnetotransport measurements on magnetic multilayer samples containing magnetic REs provide a unique opportunity to verify the RKKY coupling scheme in pure rare-earth metals, allowing us to probe both the sign and temperature dependence of the spin-density oscillation.

Exchange bias in spin-engineered double superlattices.

Exchange bias has been observed in sputtered magnetic double superlattices which consist of a ferromagnetically coupled superlattice grown on an antiferromagnetically (AF) coupled superlattice. This system exhibits a parallel domain wall, a spin flop transition, and exchange bias when the anisotropy is large in the AF block. This work shows that neither the domain wall nor the spin flop are directly related to exchange bias but that the anisotropy is essential.