Heteroepitaxial Growth of a Ta3N5 Thin Film with Clear Anisotropic Optical Properties.

Ta3N5 is a promising semiconductor photocatalyst which can generate H2 gas from water under visible light illumination. It is expected that Ta3N5 exhibits a strong anisotropy in its physical properties stemming from its highly anisotropic crystal structure. However, such anisotropic properties have not been verified experimentally due to the difficulty in synthesizing a large single crystal. Here, we report the synthesis of (010)-oriented Ta3N5 single-crystalline thin films by solid phase epitaxy on the (110) plane of perovskite LaAlO3 substrates. The obtained epitaxial thin films of Ta3N5 exhibited clear optical anisotropy (pleochroism) as predicted by previous first-principles calculations. The optical gap for E||[100] polarization (∼2.12 eV) was smaller than that for E||[100] polarization (∼2.27 eV).

Strain-induced creation and switching of anion vacancy layers in perovskite oxynitrides.

Perovskite oxides can host various anion-vacancy orders, which greatly change their properties, but the order pattern is still difficult to manipulate. Separately, lattice strain between thin film oxides and a substrate induces improved functions and novel states of matter, while little attention has been paid to changes in chemical composition. Here we combine these two aspects to achieve strain-induced creation and switching of anion-vacancy patterns in perovskite films. Epitaxial SrVO3 films are topochemically converted to anion-deficient oxynitrides by ammonia treatment, where the direction or periodicity of defect planes is altered depending on the substrate employed, unlike the known change in crystal orientation. First-principles calculations verified its biaxial strain effect. Like oxide heterostructures, the oxynitride has a superlattice of insulating and metallic blocks. Given the abundance of perovskite families, this study provides new opportunities to design superlattices by chemically modifying simple perovskite oxides with tunable anion-vacancy patterns through epitaxial lattice strain.

High-Quality Heteroepitaxial Growth of Thin Films of the Perovskite Oxynitride CaTaO2N: Importance of Interfacial Symmetry Matching between Films and Substrates.

Perovskite oxynitrides have been studied with regard to their visible light-driven photocatalytic activity and novel electronic functionalities. The assessment of the intrinsic physical and/or electrochemical properties of oxynitrides requires the epitaxial growth of single-crystalline films. However, the heteroepitaxy of perovskite oxynitrides has not yet matured compared to the progress realized in work with perovskite oxides. Herein, we report the heteroepitaxial growth of CaTaO2N thin films with (100)pc, (110)pc, and (111)pc crystallographic surface orientations (where the subscript pc denotes a pseudocubic cell) on SrTiO3 substrates using reactive radio frequency magnetron sputtering, along with investigations of crystallinity and surface morphology. Irrespective of surface orientation, stoichiometric CaTaO2N epitaxial thin films were grown coherently on SrTiO3 substrates and showed clear step and terrace surfaces in the case of low values of film thickness of approximately 20 nm. A (110)pc-oriented film was also more highly crystalline than (100)pc- and (111)pc-oriented specimens. This relationship between crystallinity and surface orientation is ascribed to the number of inequivalent in-plane rotational domains, which stems from the symmetry mismatch between the orthorhombic CaTaO2N and cubic SrTiO3. A CaTaO2N thin film grown on a lattice- and symmetry-matched orthorhombic DyScO3 substrate exhibited a significant crystallinity and a clear step and terrace surface even though the film was thick (∼190 nm). These results are expected to assist in developing the heteroepitaxial growth of high-quality perovskite oxynitride thin films.

High mobility approaching the intrinsic limit in Ta-doped SnO2 films epitaxially grown on TiO2 (001) substrates.

Achieving high mobility in SnO2, which is a typical wide gap oxide semiconductor, has been pursued extensively for device applications such as field effect transistors, gas sensors, and transparent electrodes. In this study, we investigated the transport properties of lightly Ta-doped SnO2 (Sn1-xTaxO2, TTO) thin films epitaxially grown on TiO2 (001) substrates by pulsed laser deposition. The carrier density (ne) of the TTO films was systematically controlled by x. Optimized TTO (x = 3 × 10-3) films with ne ~ 1 × 1020 cm-3 exhibited a very high Hall mobility (µH) of 130 cm2V-1s-1 at room temperature, which is the highest among SnO2 films thus far reported. The µH value coincided well with the intrinsic limit of µH calculated on the assumption that only phonon and ionized impurities contribute to the carrier scattering. The suppressed grain-boundary scattering might be explained by the reduced density of the {101} crystallographic shear planes.

Anion-Substitution-Induced Nonrigid Variation of Band Structure in SrNbO3- xN x (0 ≤ x ≤ 1) Epitaxial Thin Films.

Pervoskite oxynitrides exhibit rich functionalities such as colossal magnetoresistance and high photocatalytic activity. The wide tunability of physical properties by the N/O ratio makes perovskite oxynitrides promising as optical and electrical materials. However, composition-dependent variation of the band structure, especially under partially substituted composition, is not yet well understood. In this study, we quantitatively analyzed the composition-dependent variation of band structure of a series of SrNbO3- xN x (0 ≤ x ≤ 1.02) epitaxial thin films. Electrical conductivity decreased along with the increase of N content x as a result of an increase in Nb valence from 4+ to 5+. Optical measurements revealed that the N 2p band is formed at a critical composition between 0.07 < x < 0.38, which induces charge-transfer transition (CTT) in the visible-light region. These variations in the band structure were explained by first-principles calculations. However, the CTT energy slightly increased at higher N contents (i.e., lower carrier density) on contrary to the expectation based on the rigid-band-like shift of the Fermi level, which suggests a complex combination of the following band-shifting effects induced by N-substitution: whereas (1) reduction of the Burstein-Moss effect causes CTT energy reduction, (2) enhancement of hybridization between Nb 4d and N 2p orbitals and/or (3) suppression of many-body effects enlarge the band gap energy at larger N content. The band structure variation in perovskite oxynitride as presently elucidated would be a guidepost for future material design.

Reversible Changes in Resistance of Perovskite Nickelate NdNiO3 Thin Films Induced by Fluorine Substitution.

Perovskite nickel oxides are of fundamental as well as technological interest because they show large resistance modulation associated with phase transition as a function of the temperature and chemical composition. Here, the effects of fluorine doping in perovskite nickelate NdNiO3 epitaxial thin films are investigated through a low-temperature reaction with polyvinylidene fluoride as the fluorine source. The fluorine content in the fluorinated NdNiO3-xFx films is controlled with precision by varying the reaction time. The fully fluorinated film (x ≈ 1) is highly insulating and has a bandgap of 2.1 eV, in contrast to NdNiO3, which exhibits metallic transport properties. Hard X-ray photoelectron and soft X-ray absorption spectroscopies reveal the suppression of the density of states at the Fermi level as well as the reduction of nickel ions (valence state changes from +3 to +2) after fluorination, suggesting that the strong Coulombic repulsion in the Ni 3d orbitals associated with the fluorine substitution drives the metal-to-insulator transition. In addition, the resistivity of the fluorinated films recovers to the original value for NdNiO3 after annealing in an oxygen atmosphere. By application of the reversible fluorination process to transition-metal oxides, the search for resistance-switching materials could be accelerated.

Strain Engineering for Anion Arrangement in Perovskite Oxynitrides.

Mixed-anion perovskites such as oxynitrides, oxyfluorides, and oxyhydrides have flexibility in their anion arrangements, which potentially enables functional material design based on coordination chemistry. However, difficulty in the control of the anion arrangement has prevented the realization of this concept. In this study, we demonstrate strain engineering of the anion arrangement in epitaxial thin films of the Ca1-xSrxTaO2N perovskite oxynitrides. Under compressive epitaxial strain, the axial sites in TaO4N2 octahedra tend to be occupied by nitrogen rather than oxygen, which was revealed by N and O K-edge linearly polarized X-ray absorption near-edge structure (LP-XANES) and scanning transmission electron microscopy combined with electron energy loss spectroscopy. Furthermore, detailed analysis of the LP-XANES indicated that the high occupancy of nitrogen at the axial sites is due to the partial formation of a metastable trans-type anion configuration. These results are expected to serve as a guide for the material design of mixed-anion compounds based on their anion arrangements.

Lateral solid-phase epitaxy of oxide thin films on glass substrate seeded with oxide nanosheets.

We developed a technique to fabricate oxide thin films with uniaxially controlled crystallographic orientation and lateral size of more than micrometers on amorphous substrates. This technique is lateral solid-phase epitaxy, where epitaxial crystallization of amorphous precursor is seeded with ultrathin oxide nanosheets sparsely (≈10% coverage) deposited on the substrate. Transparent conducting Nb-doped anatase TiO2 thin films were fabricated on glass substrates by this technique. Perfect (001) orientation and large grains with lateral sizes up to 10 µm were confirmed by X-ray diffraction, atomic force microscopy, and electron beam backscattering diffraction measurements. As a consequence of these features, the obtained film exhibited excellent electrical transport properties comparable to those of epitaxial thin films on single-crystalline substrates. This technique is a versatile method for fabricating high-quality oxide thin films other than anatase TiO2 and would increase the possible applications of oxide-based thin film devices.

Second harmonic generation-based coherent vibrational spectroscopy for a liquid interface under the nonresonant pump condition.

The molecular dynamics in the low-frequency region (0-500 cm(-1)) sensitively reflects the intermolecular interactions in a liquid. The second harmonic generation-based coherent vibrational spectroscopy (SHG-CVS) was developed to monitor the low-frequency dynamics of molecules at a liquid interface, which was difficult to access by using the present spectroscopic techniques such as sum frequency generation or attenuated total reflection (ATR)-IR. Background-free detection with the transient grating (TG) optical configuration was adopted to obtain the weak signal under the electronically nonresonant pump condition. It was demonstrated that the S/N ratio of the SHG-CVS with the TG configuration was remarkably superior to that with the conventional time-resolved SHG configuration, and the improved detection limit enabled us to detect the low-frequency dynamics of coumarin 314 molecules at the air/water interface under the electronically nonresonant pump condition.

New approaches to liquid interfaces through changes in the refractive index and nonlinear susceptibility utilizing ultrashort laser pulses.

Molecules in inhomogeneous liquid environments, such as air/liquid, liquid/liquid, solid/liquid interfaces interact with each other specifically, and sometimes form characteristic structures and emerge unique properties. Here, we introduce two newly developed spectroscopic techniques, the total-internal-reflection ultrafast transient lens method (TIR-UTL) and second harmonic generation-coherent vibrational spectroscopy (SHG-CVS), to investigate the characteristic behaviors of molecules in such inhomogeneous environments. TIR-UTL probes the refractive-index change with sub-picosecond resolution and provides information on ultrafast changes in the population, density, and thermal properties, such as temperature increase and energy transfer from the solute molecules to the surrounding solvent molecules. On the other hand, SHG-CVS probes nonlinear susceptibility changes at the interfacial areas, and is expected to provide spectroscopic information on the low-frequency vibrational modes that reflect the corrective motion of the molecules in such an inhomogeneous environment. These new approaches are based on pump-probe techniques utilizing (ultra) short laser pulses. They are expected to provide further information on inhomogeneous environments from the viewpoints of solute-solvent interactions, changes in the molecular orientation, and the corrective motion of molecules at liquid interfaces.

Development of a total internal reflection ultrafast transient lens method for studying molecular dynamics on an interface.

We have developed the total internal reflection ultrafast transient lens (TIR-UTL) method to detect nonradiative chemical processes at interfaces and surfaces with subpicosecond time resolution. In the TIR-UTL measurements, the evanescent field of a pump beam irradiated under the TIR condition generates a refractive index change. The refractive index change is attributed to changes of the molecular electronic state, of density by molecular orientation/structure change, and of temperature by vibrational relaxation processes. The refractive index change is detected as a change of the power intensity of the probe beam adjusted coaxially with the pump beam. At first, we discuss a theoretical principle of a coaxial configuration in the TIR-UTL measurement. This configuration has an advantage of versatility over the established TIR configuration. Then, we evaluate time resolution of TIR-UTL and obtain a value of less than 400 fs. We measure the ultrafast molecular dynamics of the cationic chromophore Auramine O (AuO) at a silica/water interface. Two slow time constants originating from AuO adsorbed on the silica surface are detected by TIR-UTL. These are attributed to AuO, whose twisting motion is strongly hindered by adsorption on a silica surface.

Ultrafast dynamics of a solution in spatially restricted environments studied by photothermal spectroscopies.

The ultrafast dynamics of a solution in spatially restricted environments was studied by using the ultrafast transient lens (UTL) method. The UTL method is used to monitor the molecular dynamics of a solution by means of a change in the refractive index, which is advantageous for investigating the molecular dynamics of restricted systems. We investigated the photoisomerization of azobenzene derivatives in cyclodextrin nanocavities and revealed how the confinement affects the photoisomerization dynamics and yields. We also studied the relaxation dynamics of photo-excited auramine O (AuO) in a water/aerosol-OT/n-heptane reversed micelle. Both the perturbed properties of the included water and the interactions between AuO and the interface of the reversed micelle strongly appeared to affect the relaxation dynamics. At the same time, we observed a change in the refractive index suggesting a structural change of the micelles in the picosecond region that could not be detected by transient absorption spectroscopy. In addition, we developed the total internal reflection UTL (TIR-UTL) method to monitor the ultrafast molecular dynamics at the liquid interface. The relaxation dynamics of photoexcited AuO at the silica/water interface were observed with subpicosecond time resolution, and it was revealed that the interaction with the interface strongly inhibited the relaxation process. These results demonstrated the advantages of the UTL method for investigating the molecular dynamics of a solution in spatially restricted environments.