RESUMO
Two-dimensional (2D) transition metal dichalcogenides (TMDCs) draw much attention as critical semiconductor materials for 2D, optoelectronic, and spin electronic devices. Although controlled doping of 2D semiconductors can also be used to tune their bandgap and type of carrier and further change their electronic, optical, and catalytic properties, this remains an ongoing challenge. Here, we successfully doped a series of metal elements (including Hf, Zr, Gd, and Dy) into the monolayer MoS2 through a single-step chemical vapor transport (CVT), and the atomic embedded structure is confirmed by scanning transmission electron microscope (STEM) with a probe corrector measurement. In addition, the host crystal is well preserved, and no random atomic aggregation is observed. More importantly, adjusting the band structure of MoS2 enhanced the fluorescence and the carrier effect. This work provides a growth method for doping non-like elements into 2D MoS2 and potentially many other 2D materials to modify their properties.