Ionic Dopant-Encapsulating Single-Walled Carbon Nanotube Films with Metal-Like Electrical Conductivity.

Heavy doping is inevitable for utilizing single-walled carbon nanotubes for wiring. However, the electrical conductivity of their films is currently as low as one tenth of the films made from typical metal pastes. Herein we report on metal-comparable electrical conductivity from single-walled carbon nanotube network films. We use ionic liquids and crown ether complexes for p-type and n-type doping, respectively. The encapsulation of counterions into carbon nanotubes promotes the conductivities in the range of 7000 S cm-1 , approximately ten times larger than those of undoped films.

Enhanced Thermoelectric Properties of Boron-Substituted Single-Walled Carbon Nanotube Films.

Atomic doping is the most fundamental approach to modulating the transport properties of carbon nanotubes. In this paper, we demonstrate the enhanced thermoelectric properties of boron-substituted single-walled carbon nanotube (B-SWCNT) films. The developed two-step synthesis of large quantities of B-SWCNTs readily enables the measurements of thermoelectricity of bulk B-SWCNT films. Complementary structural characterization implies the unique configuration of boron atoms at the doping sites of SWCNTs, successfully enabling carrier doping to SWCNTs. The developed boron substitution, in combination with chemical doping, is found to substantially improve the thermoelectric properties.

Air-tolerant Fabrication and Enhanced Thermoelectric Performance of n-Type Single-walled Carbon Nanotubes Encapsulating 1,1'-Bis(diphenylphosphino)ferrocene.

The thermally-triggered n-type doping of single-walled carbon nanotubes is demonstrated using 1,1'-bis(diphenylphosphino)ferrocene, a novel n-type dopant. Through a simple thermal vacuum process, the phosphine compounds are moderately encapsulated inside single-walled carbon nanotubes. The encapsulation into SWNTs is carefully characterized using Raman/X-ray spectroscopy and transmission electron microscopy. This easy-to-handle doping with air-stable precursors for n-type SWNTs enables the large-scale fabrication of thermoelectric materials showing an excellent power factor exceeding approximately 240 µW mK(-2) .