Design and performance of GaSb-based quantum cascade detectors.

InAs/AlSb quantum cascade detectors (QCDs) grown strain-balanced on GaSb substrates are presented. This material system offers intrinsic performance-improving properties, like a low effective electron mass of the well material of 0.026 m 0, enhancing the optical transition strength, and a high conduction band offset of 2.28 eV, reducing the noise and allowing for high optical transition energies. InAs and AlSb strain balance each other on GaSb with an InAs:AlSb ratio of 0.96:1. To regain the freedom of a lattice-matched material system regarding the optimization of a QCD design, submonolayer InSb layers are introduced. With strain engineering, four different active regions between 3.65 and 5.5 µm were designed with InAs:AlSb thickness ratios of up to 2.8:1, and subsequently grown and characterized. This includes an optimized QCD design at 4.3 µm, with a room-temperature peak responsivity of 26.12 mA/W and a detectivity of 1.41 × 108 Jones. Additionally, all QCD designs exhibit higher-energy interband signals in the mid- to near-infrared, stemming from the InAs/AlSb type-II alignment and the narrow InAs band gap.

Anomalous Temperature Effect in Weakly Coupled Superlattices: Carrier Transport in a THz Quantum Cascade Laser.

We present an investigation into the vertical transport through 13 different superlattice structures, where the well and barrier widths, doping concentration, dopant position, and contact layers were varied. Although superlattices have been extensively studied since 1970, there is a lack of publications on transport through superlattices similarly low doped as THz quantum cascade lasers (QCLs), for which the doping is in the 3-5×10^{10} cm^{-2} range. The superlattices presented are doped in the same range as THz QCLs, with contact layers and fabrication comparable to high-temperature THz QCLs. The temperature-dependent current-voltage characteristics were measured starting from 5 K and an anomalous temperature effect was observed at the first plateau. The measured current through the superlattice first decreases before increasing again with increasing temperature, resulting in the lowest current occurring at 75-110 K. This behavior is also observed in some THz QCLs. The effect disappears for thinner barriers, higher quantum well doping, or modified contact layers, indicating a strong dependency on band bending, due to the large difference in the doping of the contact layers and the superlattice, which is confirmed with multiscattering Büttiker simulations.

Geometry of tellurene adsorbed on the Si(111)-R30°-Sb surface from first principles calculations.

The 2D form of tellurium, named tellurene, is one of the latest discoveries in the family of 2D mono-elemental materials. In a trilayer configuration, free-standing tellurene was predicted theoretically to acquire two crystallographic forms, the α and ß phases, corresponding to either a 1T-MoS2-like geometry or a trilayer slab exposing the Te(101̄0) surface of bulk Te with helical chains lying in-plane and further reconstructed due to the formation of interchain bonds. Either one or the other of the two phases was observed experimentally to prevail depending on the substrate they were grown onto. In the perspective to integrate tellurene on silicon, we here report an ab initio study of the adsorption of tellurene on the Si(111)-R30° surface passivated by antinomy. According to the literature, this substrate is chosen for the growth of several tellurides by molecular beam epitaxy. The calculations reveal that on this substrate the adsorption energy mostly compensates the energy difference between the α and ß phases in the free-standing configuration which suggests that the prevalence of one phase over the other might in this case strongly depend on the kinetics effects and deposition conditions.