Radiation-Hardened and Flexible Pb(Zr0.53Ti0.47)O3 Piezoelectric Sensor for Structural Health Monitoring.

Piezoelectric sensors are excellent damage detectors that can be applied to structural health monitoring (SHM). SHM for complex structures of aerospace vehicles working in harsh conditions is frequently required, posing challenging requirements for a sensor's flexibility, radiation hardness, and high-temperature tolerance. Here, we fabricate a flexible and lightweight Pb(Zr0.53Ti0.47)O3 piezoelectric film on flexible KMg3(AlSi3O10)F2 substrate via van der Waals (vdW) heteroepitaxy, endowing it with robust ferroelectric and piezoelectric properties under low energy-high flux protons (LE-HFPs) radiation (1015 p/cm2). More importantly, the Pb(Zr0.53Ti0.47)O3 film sensor maintains highly stable damage monitoring sensitivity on an aluminum plate under harsh conditions of LE-HFPs radiation (1015 p/cm2, flat structure), high temperature (175 °C, flat structure), and mechanical fatigue (bending 105 cycles under a radius of 5 mm, curved structure). All these superior qualities are suggested to result from the outstanding film crystal quality due to vdW epitaxy. The flexible and lightweight Pb(Zr0.53Ti0.47)O3 film sensor demonstrated in this work provides an ideal candidate for real-time SHM of aerospace vehicles with flat and complex curve-like structures working in harsh aerospace environments.

Dynamically regulated electroluminescence via strain engineering.

Dynamic regulation of the light-emission wavelength has important scientific significance for developing new electroluminescent devices and expanding the application scope to the fields of lighting, display, sensing, and human-machine interaction. In this work, an electroluminescent device with a dynamically tunable emission wavelength is achieved based on the piezoresistive effect. The tunable range can reach up to 12 nm as the external strain increases from 0% to 0.148%. Also, the luminescence mechanism of the device is systematically analyzed, and is shown to be mainly due to the transition of electrons in the ground state to the excitation state caused by thermal tunneling excitation with the participation of multi-phonons. The shift of the emission wavelength originates from the narrowing of the energy band structure under the tensile strain and the change of the crystal field around the defect centers. This work provides a new, to the best of our knowledge, strategy for the development of wavelength-tunable light-emitting devices.

High-Temperature and Flexible Piezoelectric Sensors for Lamb-Wave-Based Structural Health Monitoring.

Piezoelectric sensors can be utilized in Lamb-wave-based structural health monitoring (SHM), which is an effective method for aircraft structural damage detection. However, due to the inherent stiffness, brittleness, weight, and thickness of piezoelectric ceramics, their applications in aircraft structures with complex curved surfaces are seriously restricted. Herein, we report a flexible, light-weight, and high-performance BaTiO3:Sm2O3/SrRuO3/SrTiO3/mica film sensor that can be used in high-temperature SHM of aircraft. Enhanced ferroelectric Curie temperature (487 °C) and piezoelectric coefficient d33 (120-130 pm/V) are achieved in BaTiO3, which can be attributed to the tensile strain developed by stiff Sm2O3 nanopillars. Stable ferroelectricity and piezoelectricity are retained up to 150 °C. The flexible BaTiO3:Sm2O3/SrRuO3/SrTiO3/mica film is validated as an ultrasonic sensor with high sensitivity and stability for damage monitoring on aircraft structures with the curved surface ranging from 25 to 150 °C. Our work demonstrates that flexible and light-weight BaTiO3:Sm2O3/SrRuO3/SrTiO3/mica film sensors can be employed as high-temperature piezoelectric sensors for real-time SHM of aircraft structures with complex curved surfaces.

PET/Ag NW/PMMA transparent electromagnetic interference shielding films with high stability and flexibility.

Flexible transparent electromagnetic interference (EMI) shielding materials in visual windows are essential for the innovation of optoelectronic devices. Herein, we demonstrate the fabrication of flexible EMI shielding films based on silver nanowires (Ag NWs) and polymethyl methacrylate (PMMA). The purified Ag NWs are uniform in size and morphology, with aspect ratio over 1000. The PET/Ag NW/PMMA flexible transparent conductive films (FTCFs) with a sandwich structure were obtained via Mayer-rod coating of the Ag NWs and spin-coating of the PMMA polymer on a polyethylene terephthalate (PET) substrate. The root mean square roughness value of PET/Ag NW/PMMA FTCFs could decrease from 21 nm to 4 nm due to the filling of PMMA in the interface among Ag NWs. The PET/Ag NW/PMMA FTCFs can achieve a sheet resistance of 21 Ω sq-1 at a transmittance of 95.6%, resulting in a high figure of merit of 447. Moreover, the composite films exhibit remarkable flexibility after 10 000 continuous bending cycles, as well as great stability in harsh environments of 80 °C/80% RH aging for 600 h. An EMI shielding effectiveness (SE) of 21.3 dB in combination with a high optical transmittance of 95.6% for the PET/Ag NW/PMMA FTCFs is sufficient to satisfy the requirement of commercial transparent EMI shielding applications. The absorption component of the SE was demonstrated to play a dominant role in the EMI shielding mechanism. The comprehensive performance (flexibility, stability, transparency and EMI shielding performance) makes the PET/Ag NW/PMMA FTCFs have great potential as a flexible transparent EMI shielding material in emerging flexible optoelectronic devices.

Two-dimensional magnetic interplay in the tensile-strained LaCoO3 thin films.

High-quality epitaxial LaCoO3 (LCO) thin films have been deposited on SrTiO3 (STO) substrates with pulsed laser deposition (PLD). We find that the LCO films undergo a typical ferromagnetic-paramagnetic (FM-PM) phase transition at ∼80 K. To understand the nature of magnetic phase transition, various methods, including the modified Arrott plot and critical isotherm analysis, were used to determine the critical exponents, which are ß = 0.754(1) with a Curie temperature TC = 79.8(8) K and γ = 1.52(2) with TC = 79.9(2) K. The reliability of these critical exponents was confirmed using the Widom scaling relation and the scaling hypothesis. Further analysis revealed that the spin coupling within the LCO films exhibits two-dimensional (2D) long-range magnetic interaction and the magnetic exchange distance decays as J(r) ∼r-(3.46). Our critical behavior analysis may shed new light on the further understanding of the origin of FM and the relatively fixed TC in LCO thin films.

Decoupling between metal-insulator transition and structural phase transition in an interface-engineered VO2.

The coupling between the metal-insulator transition (MIT) and the structural phase transition (SPT) in VO2 has been at the center of discussion for several decades, while the underlying mechanisms of electron-lattice or electron-electron interactions remain an open question. Until recently, the equilibrium state VO2 is believed to be a non-standard Mott-Hubbard system, i.e., both of the two interactions cooperatively work on MIT, indicating the association between MIT and SPT. However, due to the pronounced contribution of strain in strongly correlated systems, it is desirable to explore the correspondence in an interface-engineered VO2. Herein, we investigate the carrier dynamics in the VO2 films with anomalous MIT on the basis of time-resolved transient differential reflectivity measurements. Unexpectedly, MIT is decoupled from SPT, in sharp contrast with the case of strain-free VO2 films: MIT is triggered by bandgap recombination below 75 °C during heating, while intense SPT-induced signal appears separately between 70 °C and 100 °C. The decoupling between MIT and SPT provides insights into the interfacial interactions in VO2 thin films.

Perovskite Transparent Conducting Oxide for the Design of a Transparent, Flexible, and Self-Powered Perovskite Photodetector.

Transparent and flexible electronic devices are highly desired to meet the great demand for next-generation devices that are lightweight, flexible, and portable. Transparent conducting oxides (TCOs), such as indium-tin oxide, serve as fundamental components for the design of transparent and flexible electronic devices. However, indium is rare and expensive. Herein, we report the fabrication of low-cost perovskite SrVO3 TCO films on transparent and flexible mica substrates and further demonstrate their utilization as a TCO electrode for building a transparent, flexible, and self-powered perovskite photodetector. Superior stable optical transparency and electrical conductivity are retained in SrVO3 after bending up to 105 cycles. Without an external power source, the constructed all-perovskite photodetector exhibits a high responsivity (42.5 mA W-1), fast response time (3.09/1.23 ms), and an excellent flexibility and bending stability after dozens of cycles of bending at an extreme 90° bending angle. Our results demonstrate that low-cost and structure-compatible transition metal-based perovskite oxides, such as SrVO3, as TCO electrodes have huge potential for building high-performance transparent, flexible, and portable smart electronics.

Breaking Lattice Symmetry in Highly Strained Epitaxial VO2 Films on Faceted Nanosurface.

The lattice symmetry of strongly correlated oxide heterostructures determines their exotic physical properties by coupling the degrees of freedom between lattices and electrons, orbitals, and spin states. Systematic studies on VO2, a Mott insulator, have previously revealed that lattice distortion can be manipulated by the interfacial strain and electronic phase separation can emerge. However, typical epitaxial film-substrate interface strain provides a very limited range for exploring such interface-engineered phenomena. Herein, epitaxially grown VO2 thin films on asymmetrically faceted m-plane sapphire substrates with the hill-and-valley type surfaces have been demonstrated. Interestingly, lattice symmetry breaking has been proven based on the large residual strain from the different faceted planes. By this lattice symmetry breaking, electronic phase separation and metal-insulator transition in the VO2 films are modulated, and anisotropy in optical responses is exhibited. These results on asymmetrical interfacial engineering in oxide heterostructures open up new routes for novel functional materials design and functional electro/optic device nanofabrication.

Influence of the vicinal surface on the anisotropic dielectric properties of highly epitaxial Ba0.7Sr0.3TiO3 thin films.

Epitaxial thin films of Ba0.7Sr0.3TiO3 (BST) were grown on the designed vicinal single-crystal LaAlO3 (001) substrates to systematically investigate the evolution of microstructures and in-plane dielectric properties of the as-grown films under the strains induced by surface step terraces. Anisotropic dielectric properties were observed, which can be attributed to different tetragonalities induced by vicinal LaAlO3 substrates with miscut orientations along the [100] and [110] directions with different miscut angles of 1.0°, 2.75° and 5.0°. A terrace geometric model with both compressive and tensile strained domains in the BST film was established, which is in good agreement with the experimental results. Our experimental studies not only shed new light on the heteroepitaxial growth mechanism, but also provide a promising platform for the design and integration of high performance device applications.

Surface step terrace tuned microstructures and dielectric properties of highly epitaxial CaCu3Ti4O12 thin films on vicinal LaAlO3 substrates.

Controllable interfacial strain can manipulate the physical properties of epitaxial films and help understand the physical nature of the correlation between the properties and the atomic microstructures. By using a proper design of vicinal single-crystal substrate, the interface strain in epitaxial thin films can be well controlled by adjusting the miscut angle via a surface-step-terrace matching growth mode. Here, we demonstrate that LaAlO3 (LAO) substrates with various miscut angles of 1.0°, 2.75°, and 5.0° were used to tune the dielectric properties of epitaxial CaCu3Ti4O12 (CCTO) thin films. A model of coexistent compressive and tensile strained domains is proposed to understand the epitaxial nature. Our findings on the self-tuning of the compressive and tensile strained domain ratio along the interface depending on the miscut angle and the stress relaxation mechanism under this growth mode will open a new avenue to achieve CCTO films with high dielectric constant and low dielectric loss, which is critical for the design and integration of advanced heterostructures for high performance capacitance device applications.

Evolution of the intrinsic electronic phase separation in La0.6Er0.1Sr0.3MnO3 perovskite.

Magnetic and electronic transport properties of perovskite manganite La0.6Er0.1Sr0.3MnO3 have been thoroughly examined through the measurements of magnetization, electron paramagnetic resonance(EPR), and resistivity. It was found that the substitution of Er3+ for La3+ ions introduced the chemical disorder and additional strain in this sample. An extra resonance signal occurred in EPR spectra at high temperatures well above T C gives a strong evidence of electronic phase separation(EPS). The analysis of resistivity enable us to identify the polaronic transport mechanism in the paramagnetic region. At low temperature, a new ferromagnetic interaction generates in the microdomains of Er3+-disorder causing the second increase of magnetization. However, the new ferromagnetic interaction does not improve but decreases electronic transport due to the enhancement of interface resistance among neighboring domains. In view of a really wide temperature region for the EPS existence, this sample provides an ideal platform to uncover the evolution law of different magnetic structures in perovskite manganites.

Role of microstructures on the M1-M2 phase transition in epitaxial VO2 thin films.

Vanadium dioxide (VO2) with its unique sharp resistivity change at the metal-insulator transition (MIT) has been extensively considered for the near-future terahertz/infrared devices and energy harvesting systems. Controlling the epitaxial quality and microstructures of vanadium dioxide thin films and understanding the metal-insulator transition behaviors are therefore critical to novel device development. The metal-insulator transition behaviors of the epitaxial vanadium dioxide thin films deposited on Al2O3 (0001) substrates were systematically studied by characterizing the temperature dependency of both Raman spectrum and Fourier transform infrared spectroscopy. Our findings on the correlation between the nucleation dynamics of intermediate monoclinic (M2) phase with microstructures will open a new avenue for the design and integration of advanced heterostructures with controllable multifunctionalities for sensing and imaging system applications.

Nucleation dynamics of nanostructural TiO2 films with controllable phases on (001) LaAlO3.

Microstructure evolution and nucleation dynamics of TiO2 nanostructural thin films on (001) LaAlO3 substrates grown by the polymer-assisted deposition technique have been systematically studied with the increase of annealing temperature. Epitaxial anatase TiO2 phase with nanometer-scaled periodic surface strip patterns can be achieved when the sample is annealed at 900 ° C. It is also found that the morphology of the surface pattern is related to the ramping rate of the temperature during annealing. The formation of the surface strip pattern can be considered to be associated with the diffusion limit growth dynamics. The surface pattern structure was found to strongly affect the hydrophilic properties of the thin films.

Growth dynamics of barium titanate thin films on polycrystalline Ni foils using polymer-assisted deposition technique.

Polymer-assisted deposition (PAD) technique was developed to fabricate ferroelectric BaTiO(3) (BTO) thin films directly on polycrystalline nickel foils. The growth dynamics was systematically studied to optimize the single-phase BTO films with good dielectric properties. It is critical to pretreat nickel foils with hydrogen peroxide (H(2)O(2)) solution to form thin nickel oxide layers on the surfaces for the growth of BTO films. Both the concentration of H(2)O(2) solution and the pretreated time were found to strongly affect the dielectric constant of BTO films, which may be associated with the oxygen diffusion from nickel oxide buffer layers to BTO layers during annealing. The BTO thin films with optimized growth conditions have good crystal structure and electrical properties, suggesting that the as-grown BTO films by PAD technique can be utilized for new devices development and energy storage applications.