Charge-Transporting-Layer-Free, Vacuum-Free, All-Inorganic CsPbIBr2 Perovskite Solar Cells Via Dipoles-Adjusted Interface.

The inorganic perovskite has a better stability than the hybrid halide perovskite, and at the same time it has the potential to achieve an excellent photoelectric performance as the organic-inorganic hybrid halide perovskite. Thus, the pursuit of a low-cost and high-performance inorganic perovskite solar cell (PSC) is becoming the research hot point in the research field of perovskite devices. In setting out to build vacuum-free and carbon-based all-inorganic PSCs with the traits of simple fabrication and low cost, we propose the ones with a simplified vertical structure of FTO/CsPbIBr2/carbon upon interfacial modification with PEI species. In this structure, both the electron-transporting-layer and hole-transporting-layer are abandoned, and the noble metal is also replaced by the carbon paste. At the same time, FTO is modified by PEI, which brings dipoles to decrease the work function of FTO. Through our measurements, the carrier recombination has been partially suppressed, and the performance of champion PSCs has far exceeded the control devices without PEI modification, which yields a power conversion efficiency of 4.9% with an open circuit voltage of 0.9 V and a fill factor of 50.4%. Our work contributes significantly to give an available method to explore charge-transporting-layer-free, low-cost, and high-performance PSCs.

Toward High-Performance Electron/Hole-Transporting-Layer-Free, Self-Powered CsPbIBr2 Photodetectors via Interfacial Engineering.

Self-powered photodetectors (PDs) with inorganic lead halide perovskites hold multiple traits of high sensitivity, fast response, independence from external power supply, and excellent sustainability and stability, thus holding a great promise for practical applications. However, they generally contain high-temperature-processed electron-transporting layers (ETLs) and high-cost, unstable hole-transporting layers (HTLs) coupled with noble metal electrodes, which bring significant obstacles of production cost and stability for their potential commercialization. Herein, we demonstrate the building of high-performance HTL/ETL-free, self-powered CsPbIBr2 PD with simplified architecture of fluorine-doped tin oxide (FTO)/CsPbIBr2/carbon upon interfacial modification by polyethyleneimine (PEI). The optimized PD yields a dark current of 2.03 × 10-9 A, peak responsivity (R) of 0.32 A/W, maximum specific detectivity (D*) of 3.74 × 1012 Jones, and response time of 1.21 µs. These figures of merit are far beyond those of the one prepared without PEI modification and even the PD containing TiO2 ETL. Hence, our work suggests a highly feasible route to develop self-powered PDs with significantly simplified fabrication and a reduced production cost.

Enhanced Performance of Inverted Non-Fullerene Organic Solar Cells by Using Metal Oxide Electron- and Hole-Selective Layers with Process Temperature ≤150 °C.

In this work, an efficient inverted organic solar cell (OSC) based on the non-fullerene PBDB-T:IT-M blend system is demonstrated by using an aqueous solution processed ZnO electron-selective layer with the whole process temperature ≤150 °C and a thermally evaporated MoO3 hole-selective layer The ZnO selective layer is deposited by aqueous solution and prepared in a low-temperature process, so that it can be compatible with the roll-to-roll process. The proposed device achieves an enhanced power conversion efficiency (PCE) of 9.33% compared with the device based on the high-temperature sol-gel-processed ZnO selective layer, which achieves a PCE of 8.62%. The inverted device also shows good stability, keeping more than 82% of its initial PCE after being stored under ambient air conditions and a humidity of around 40% without any encapsulation for 240 h. The results show the potential for the fabrication of efficient non-fullerene OSCs with low-temperature metal oxide selective layers.