Correction: Integrated silicon photonic MEMS.

[This corrects the article DOI: 10.1038/s41378-023-00498-z.].

Integrated silicon photonic MEMS.

Silicon photonics has emerged as a mature technology that is expected to play a key role in critical emerging applications, including very high data rate optical communications, distance sensing for autonomous vehicles, photonic-accelerated computing, and quantum information processing. The success of silicon photonics has been enabled by the unique combination of performance, high yield, and high-volume capacity that can only be achieved by standardizing manufacturing technology. Today, standardized silicon photonics technology platforms implemented by foundries provide access to optimized library components, including low-loss optical routing, fast modulation, continuous tuning, high-speed germanium photodiodes, and high-efficiency optical and electrical interfaces. However, silicon's relatively weak electro-optic effects result in modulators with a significant footprint and thermo-optic tuning devices that require high power consumption, which are substantial impediments for very large-scale integration in silicon photonics. Microelectromechanical systems (MEMS) technology can enhance silicon photonics with building blocks that are compact, low-loss, broadband, fast and require very low power consumption. Here, we introduce a silicon photonic MEMS platform consisting of high-performance nano-opto-electromechanical devices fully integrated alongside standard silicon photonics foundry components, with wafer-level sealing for long-term reliability, flip-chip bonding to redistribution interposers, and fibre-array attachment for high port count optical and electrical interfacing. Our experimental demonstration of fundamental silicon photonic MEMS circuit elements, including power couplers, phase shifters and wavelength-division multiplexing devices using standardized technology lifts previous impediments to enable scaling to very large photonic integrated circuits for applications in telecommunications, neuromorphic computing, sensing, programmable photonics, and quantum computing.

Vacuum-sealed silicon photonic MEMS tunable ring resonator with an independent control over coupling and phase.

Ring resonators are a vital element for filters, optical delay lines, or sensors in silicon photonics. However, reconfigurable ring resonators with low-power consumption are not available in foundries today. We demonstrate an add-drop ring resonator with the independent tuning of round-trip phase and coupling using low-power microelectromechanical (MEMS) actuation. At a wavelength of 1540 nm and for a maximum voltage of 40 V, the phase shifters provide a resonance wavelength tuning of 0.15 nm, while the tunable couplers can tune the optical resonance extinction ratio at the through port from 0 to 30 dB. The optical resonance displays a passive quality factor of 29 000, which can be increased to almost 50 000 with actuation. The MEMS rings are individually vacuum-sealed on wafer scale, enabling reliable and long-term protection from the environment. We cycled the mechanical actuators for more than 4 × 109 cycles at 100 kHz, and did not observe degradation in their response curves. On mechanical resonance, we demonstrate a modulation increase of up to 15 dB, with a voltage bias of 4 V and a peak drive amplitude as low as 20 mV.

Enhanced Electrical Mobilities of Laser Annealed Ga Doped ZnO Thin Films.

In this study, Ga-doped ZnO thin films were prepared, and their potential for transparent conducting oxide applications was assessed. To increase the electrical mobility and reduce the resistance of Ga-doped ZnO thin films, CO2 laser annealing was employed. Recently, the use of transparent conducting oxides (TCOs) have increased, particularly ZnO-based TCOs have been intensively investigated for display applications. To enhance the electrical and optical properties of ZnO thin films, Ga was used as a dopant. First, Ga-doped ZnO thin-film precursors were prepared by the sol-gel method. Subsequently, Ga-doped ZnO thin films were coated on glass substrates by spin coating. Electrical furnace treatment and rapid thermal annealing were employed to obtain and anneal a wurtzite ZnO based structure. The electrical and optical properties of the annealed thin films were optimized by varying the Ga doping concentration. Via Ga doping and optimized laser annealing, the resistivity of the ZnO film could be decreased from 16.32 Ω· cm to 0.45 Ω·cm; notably, the transmittance was similar (85%) in the 380-800 nm range. The transmittance properties of the films are not presented in this paper. Moreover, after an optical CO2 laser annealing process, the conductivity of the films improved by more than 40 times. Furthermore, the electrical properties (mobility, resistivity, and bulk and sheet concentrations) of the CO2-laser-annealed Ga-doped ZnO thin films were optimized.

Possibility of Thermal Energy Recycling Based Light Emitting Diodes Grid System.

Light Emitting Diodes (LED) are highly energy efficient and offer long-life times for display applications. Long life and minimal energy consumption are often the most attractive advantages for electronic devices. Because LEDs are based on compound semiconductors, which explore the direct transition between the conduction and valance band edges, thermal energy loss can be minimized during operation. However, even though these types of LEDs are based on direct transition type semiconductors, thermal energy is still emitted during operation owing to forward conduction and reverse leakage currents. This research proposes capturing this energy loss through thermoelectric module-based energy recycling methods to improve the energy efficiency of LED applications, achieving savings of up to 18%. Additional analysis was performed on high power LED sources resulting in the manufacture of a high-power LED light grid system.

Energy Harvesting Through Wasted Thermal Energy by Light Grid Sources.

In this study, emitted light energy and the recycling of thermal energy from the arrays of a light emitting diode system were investigated. A light grid system is composed of the array of high power LED chips, thermoelement and heat sink. High power LED source has an advantage of high luminous efficiency, which combined with wasted thermal energy. Thermal energy loss can be regarded wasted energy. However, this wasting thermal energy can be effectively converted to the electrical energy from thermoelement and heat sink of a light grid system. By introducing the light grid system, the optical energy and thermal energy can be more effectively managed. In particular, we have intensively studied energy conversion efficiency of light grid system and energy harvesting characteristic through thermal energy.

Pyroelectric and Piezoelectric Properties of (1-x)Na0.5K0.5NbO3-xBiScO3 Lead-Free Ceramics.

In this research, the pyroelectric and piezoelectric properties of (1 - x)Na0.5K0.5NbO3-xBiScO3 ceramics were investigated and analyzed. (Na, K)NbO3 based (1 - x)Na0.5K0.5NbO3-xBiScO3 ceramics were prepared by a conventional mixed oxide method. As the substituent, BiScO3 material enhanced the sintering mechanism of NKN ceramic, which improved the density, pyroelectric and piezoelectric properties, without any structural distortion. In this study, the structural dependent improved piezoelectric properties of (1 - x)Na0.5K0.5NbO3-xBiScO3 ceramics were investigated with various sintering temperatures. Also, the pyroelectric properties of (1 - x)Na0.5K0.5NbO3-xBiScO3 ceramics were observed up to 200 °C for the devices applications. The crystalline structures of the (1-x)Na0.5K0.5NbO3-x BiScO3 ceramics were measured by X-ray diffraction (XRD). The microstructure was examined by field emission scanning electron microscopy (FE-SEM). In addition, piezo-electric charge coefficient d33 and pyroelectric coefficient will be discussed.

Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

Angle Dependent 3-D Directional Patterning of Flexible Films by Infrared Laser.

Laser direct patterning (LDP) technology has attracted great attention due to its process simplification and environmental friendliness. It is replacing the existing photo-lithography technology. Infrared (IR) laser equipment also has advantages such as low cost and long duration, although it is difficult to implement fine line width compared to ultraviolet (UV) or excimer laser. Therefore, it is very important to realize 3-D patterning system based on cheap infrared laser system. In this paper, 3-D infrared laser direct patterning system was designed by introducing an etching process on Ag paste/ITO/PET flexible film. Such 3-D patterned Ag paste/ITO/PET flexible films showed feasibility and effectiveness of 3-D laser directional patterning technologies. Etch ratio of the fabricated Ag paste/ITO/PET flexible film after 3-D infrared laser direct patterning was then systematically investigated.