RESUMO
Electron emission from quasi-freestanding bilayer epitaxial graphene (QFEG) on a silicon carbide substrate is reported, demonstrating emission currents as high as 8.5µA, at â¼200 °C, under 0.3 Torr vacuum. Given the significantly low turn-on temperature of these QFEG devices, â¼150°C, the electron emission is explained by phonon-assisted electron emission, where the acoustic and optical phonons of QFEG causes carrier acceleration and emission. Devices of differing dimensions and shapes are fabricated via a simple and scalable fabrication procedure and tested. Variations in device morphology increase the density of dangling bonds, which can act as electron emission sites. Devices exhibit emission enhancement at increased temperatures, attributed to greater phonon densities. Devices exhibit emission under various test conditions, and a superior design and operating methodology are identified.