Chronic stability of activated iridium oxide film voltage transients from wireless floating microelectrode arrays.

Successful monitoring of the condition of stimulation electrodes is critical for maintaining chronic device performance for neural stimulation. As part of pre-clinical safety testing in preparation for a visual prostheses clinical trial, we evaluated the stability of the implantable devices and stimulation electrodes using a combination of current pulsing in saline and in canine visual cortex. Specifically, in saline we monitored the stability and performance of 3000 µm2 geometric surface area activated iridium oxide film (AIROF) electrodes within a wireless floating microelectrode array (WFMA) by measuring the voltage transient (VT) response through reverse telemetry. Eight WFMAs were assessed in vitro for 24 days, where n = 4 were pulsed continuously at 80 µA (16 nC/phase) and n = 4 remained in solution with no applied stimulation. Subsequently, twelve different WFMAs were implanted in visual cortex in n = 3 canine subjects (4 WFMAs each). After a 2-week recovery period, half of the electrodes in each of the twelve devices were pulsed continuously for 24 h at either 20, 40, 63, or 80 µA (200 µs pulse width, 100 Hz). VTs were recorded to track changes in the electrodes at set time intervals in both the saline and in vivo study. The VT response of AIROF electrodes remained stable during pulsing in saline over 24 days. Electrode polarization and driving voltage changed by less than 200 mV on average. The AIROF electrodes also maintained consistent performance, overall, during 24 h of pulsing in vivo. Four of the in vivo WFMA devices showed a change in polarization, access voltage, or driving voltage over time. However, no VT recordings indicated electrode failure, and the same trend was typically seen in both pulsed and unpulsed electrodes within the same device. Overall, accelerated stimulation testing in saline and in vivo indicated that AIROF electrodes in the WFMA were able to consistently deliver up to 16 nC per pulse and would be suitable for chronic clinical use.

Charge injection characteristics of sputtered ruthenium oxide electrodes for neural stimulation and recording.

We have studied the charge-injection characteristics and electrochemical impedance of sputtered ruthenium oxide (RuOx ) films as electrode coatings for neural stimulation and recording electrodes. RuOx films were deposited by reactive DC magnetron sputtering, using a combination of water vapor and oxygen gas as reactive plasma constituents. The cathodal charge storage capacity of planar RuOx electrodes was found to be 54.6 ± 9.5 mC/cm2 (mean ± SD, n = 12), and the charge-injection capacity in a 0.2-ms cathodal current pulse was found to be 7.1 ± 0.3 mC/cm2 (mean ± SD, n = 15) at 0.6 V positive bias versus Ag|AgCl, in phosphate buffer saline at room temperature for ~250 nm thick films. In general, the RuOx films exhibited high charge-injection capacities, with or without a positive interpulse bias, comparable to sputtered iridium oxide (SIROF) coatings. The charge-injection capacity increased monotonically with film thickness from 120 to 630 nm, and reached 11.30 ± 0.34 mC/cm2 (mean ± SD, n = 5) at 0.6 V bias versus Ag|AgCl at 630 nm film thickness. In addition, RuOx films showed minimal changes in electrochemical characteristics over 1.5 billion cycles of constant current pulsing at a charge density of 408 µC/cm2 (8 nC/phase, 200 µs pulse width). The findings of low-impedance, high charge-injection capacity, and long-term pulsing stability suggest the suitability of RuOx as a comparatively inexpensive and favorable choice of electrode material for neural stimulation and recording.

In Vitro Electrochemical Properties of Titanium Nitride Neural Stimulating and Recording Electrodes as a Function of Film Thickness and Voltage Biasing.

Thin film titanium nitride (TiN), with a geometric surface area of 2,000 µm2, was deposited on planar test structures with thicknesses of 95, 185, 315, and 645 nm. Electrochemical measurements of electrochemical impedance spectroscopy (EIS), cyclic voltammetry (CV), and voltage transient (VT) were performed. We found that impedance values decreased and charge storage and charge injection capacities increased with increasing film thicknesses. Additionally, applying a anodic bias to TiN can increase the charge injection of the film to nearly double that of a non-biased film.

Sputtered Ruthenium Oxide Neural Stimulation Electrodes.

We have investigated the charge-injection properties of sputtered ruthenium oxide (RuOx) coatings deposited on planar microelectrode arrays. Substantial charge was found to be available for injection within -0.6/0.6 V vs Ag|AgCl potential limits for the sputtered RuOx film. The charge-injection capacity increased further upon extending the potential limits to -0.7/0.7 V vs Ag|AgCl. No oxygen reduction, an unwanted side reaction, was observed during the pulsing of sputtered RuOx microelectrodes in phosphate buffered saline solution. Additionally, the RuOx coatings were found to be electrochemically stable for up to 1-billion-cycles of constant current stimulation pulsing at 8 nC/phase in model-ISF at 37° C.

Sputtered ruthenium oxide coatings for neural stimulation and recording electrodes.

We have investigated the deposition and electrochemical properties of sputtered ruthenium oxide coatings for neural stimulation and recording electrodes. A combination of oxygen and water vapor was used as a reactive gas mixture during DC magnetron sputtering from a ruthenium metal target. The sputtering plasma was monitored by optical emission spectroscopy to determine the reactive species present and confirm the control of plasma chemistry by reactive gas flow rates into the deposition chamber. The effect of the O2 :H2 O gas ratio on the microstructure and electrochemical properties of the ruthenium oxide were studied in detail. We employed a combination of surface characterization techniques, including scanning electron microscopy, x-ray diffraction, and x-ray photoelectron spectroscopy, to understand the relationship between plasma chemistry and the microstructure of the films produced under different gas flow conditions. Electrochemical characterization included cyclic voltammetry, electrochemical impedance spectroscopy, and voltage transient measurements, performed on planar ruthenium oxide electrodes with a geometric surface area of 1960 µm2 . At an O2 :H2 O gas flow rate ratio of 1:3, a cathodal charge-storage capacity per unit film thickness of 228.7 mC cm-2 µm-1 (median, Q1 = 134.5, Q3 = 236.6, n = 15) and a charge-injection capacity (0.6 V anodal interpulse bias) of 7.4 mC cm-2 (median, Q1 = 6.9, Q3 = 8.3, n = 15) were obtained in phosphate buffered saline. The charge-injection capacity of ruthenium oxide sputtered with water vapor in the reactive plasma is comparable with sputtered iridium oxide (SIROF) and higher than reported values for porous TiN, a commonly employed high-surface area stimulation electrode coating.

Activated iridium oxide film (AIROF) electrodes for neural tissue stimulation.

OBJECTIVE: Iridium oxide films are commonly used as a high charge-injection electrode material in neural devices. Yet, few studies have performed in-depth assessments of material performance versus film thickness, especially for films grown on three-dimensional (instead of planar) metal surfaces in neutral pH electrolyte solutions. Further, few studies have investigated the driving voltage requirements for constant-current stimulation using activated iridium oxide (AIROF) electrodes, which will be a key constraint for future use in wirelessly powered neural devices. APPROACH: In this study, iridium microwire probes were activated by repeated potential pulsing in room temperature phosphate buffered saline (pH 7.1-7.3). Electrochemical measurements were recorded in three different electrolyte conditions for probes with different geometric surface areas (GSAs) as the AIROF thickness was increased. MAIN RESULTS: Maintaining an anodic potential bias during the inter-pulse interval was required for AIROF electrodes to deliver charge levels considered necessary for neural stimulation. Potential pulsing for 100-200 cycles was sufficient to achieve charge injection levels of 2.5 mC cm-2 (50 nC/phase in a biphasic pulse) in PBS with 2000 µm2 iridium probes. Increasing the electrode surface area to 3000 µm2 and 4000 µm2 significantly increased charge-injection capacity, reduced the driving voltage required to deliver a fixed amount of charge, and reduced polarization of the electrodes during constant-current pulsing. SIGNIFICANCE: This study establishes methods for choosing an activation protocol and a desired GSA for three-dimensional iridium electrodes suitable for neural tissue insertion and stimulation, and provides guidelines for evaluating electrochemical performance of AIROF using model saline solutions.

High-charge-capacity sputtered iridium oxide neural stimulation electrodes deposited using water vapor as a reactive plasma constituent.

The deposition and properties of sputtered iridium oxide films (SIROFs) using water vapor as a reactive gas constituent are investigated for their potential as high-charge-capacity neural stimulation electrodes. Systematic investigation through a series of optical and electrochemical measurements reveals that the incorporation of water vapor as a reactive gas constituent, along with oxygen, alters the reduction-oxidation (redox) state of the plasma as well as its morphology and the electrochemical characteristics, including the cathodal charge-storage capacity (CSCc ) and charge-injection capacity (CIC), of the SIROF. An apparent optimal O2 :H2 O gas ratio of 1:3 produced SIROF with a CSCc of 182.0 mC cm-2 µm-1 (median, Q1 = 172.5, Q3 = 193.4, n = 15) and a CIC of 3.57 mC cm-2 (median, Q1 = 2.97, Q3 = 4.58, n = 12) for 300-nm-thick films. These values are higher than those obtained with SIROFs deposited using no water vapor by a factor of 2.3 and 1.7 for the CSCc and CIC, respectively. Additionally, the SIROF showed minimal changes in electrochemical characteristics over 109 pulses of constant current stimulation and showed no indication of cytotoxicity toward primary cortical neurons in a cell viability assay. These results warrant investigation of the chronic recording and stimulation capabilities of the SIROF for implantable microelectrode arrays.

Electrical Properties of Thiol-ene-based Shape Memory Polymers Intended for Flexible Electronics.

Thiol-ene/acrylate-based shape memory polymers (SMPs) with tunable mechanical and thermomechanical properties are promising substrate materials for flexible electronics applications. These UV-curable polymer compositions can easily be polymerized onto pre-fabricated electronic components and can be molded into desired geometries to provide a shape-changing behavior or a tunable softness. Alternatively, SMPs may be prepared as a flat substrate, and electronic circuitry may be built directly on top by thin film processing technologies. Whichever way the final structure is produced, the operation of electronic circuits will be influenced by the electrical and mechanical properties of the underlying (and sometimes also encapsulating) SMP substrate. Here, we present electronic properties, such as permittivity and resistivity of a typical SMP composition that has a low glass transition temperature (between 40 and 60 °C dependent on the curing process) in different thermomechanical states of polymer. We fabricated parallel plate capacitors from a previously reported SMP composition (fully softening (FS)-SMP) using two different curing processes, and then we determined the electrical properties of relative permittivity and resistivity below and above the glass transition temperature. Our data shows that the curing process influenced the electrical permittivity, but not the electrical resistivity. Corona-Kelvin metrology evaluated the quality of the surface of FS-SMP spun on the wafer. Overall, FS-SMP demonstrates resistivity appropriate for use as an insulating material.

Chronic recording and electrochemical performance of amorphous silicon carbide-coated Utah electrode arrays implanted in rat motor cortex.

OBJECTIVE: Clinical applications of implantable microelectrode arrays are currently limited by device failure due to, in part, mechanical and electrochemical failure modes. To overcome this challenge, there is significant research interest in the exploration of novel array architectures and encapsulation materials. Amorphous silicon carbide (a-SiC) is biocompatible and corrosion resistant, and has recently been employed as a coating on biomedical devices including planar microelectrode arrays. However, to date, the three-dimensional Utah electrode array (UEA) is the only array architecture which has been approved by the food and drug administration (FDA) for long-term human trials. APPROACH: Here, we demonstrate, for the first time, that UEAs can be fabricated with a-SiC encapsulation and sputtered iridium oxide film (SIROF) electrode coatings, and that such arrays are capable of single-unit recordings over a 30 week implantation period in rat motor cortex. Over the same period, we carried out electrochemical measurements, including voltage transients, cyclic voltammetry, and electrochemical impedance spectroscopy (EIS), to evaluate potential failure modes. Furthermore, we evaluated chronic foreign body response via fluorescence immunohistochemistry following device explantation. MAIN RESULTS: During the indwelling period, we observed a reduction in active electrode yield percentage from 94.6 ± 5.4 (week 1) to 16.4 ± 11.5% (week 30). While the average active electrode yield showed a steady reduction, it is noteworthy that 3 out of 8 UEAs recorded greater than 60% active electrode yield at all times through 24 weeks and 1 out of 8 UEAs recorded greater than 60% active electrode yield at all times through the whole implantation period. SIGNIFICANCE: In total, these findings further suggest that a-SiC may serve as a mechanically and electrochemically stable device encapsulation alternative to polymeric coatings such as Parylene-C.

Effect of oxidation on intrinsic residual stress in amorphous silicon carbide films.

The change in residual stress in plasma enhanced chemical vapor deposition amorphous silicon carbide (a-SiC:H) films exposed to air and wet ambient environments is investigated. A close relationship between stress change and deposition condition is identified from mechanical and chemical characterization of a-SiC:H films. Evidence of amorphous silicon carbide films reacting with oxygen and water vapor in the ambient environment are presented. The effect of deposition parameters on oxidation and stress variation in a-SiC:H film is studied. It is found that the films deposited at low temperature or power are susceptible to oxidation and undergo a notable increase in compressive stress over time. Furthermore, the films deposited at sufficiently high temperature (≥325 C) and power density (≥0.2 W cm-2 ) do not exhibit pronounced oxidation or temporal stress variation. These results serve as the basis for developing amorphous silicon carbide based dielectric encapsulation for implantable medical devices. © 2018 Wiley Periodicals, Inc. J Biomed Mater Res Part B: Appl Biomater 107B: 1654-1661, 2019.