Unlocking the Potential of Porous Bi2Te3-Based Thermoelectrics Using Precise Interface Engineering through Atomic Layer Deposition.

Porous thermoelectric materials offer exciting prospects for improving the thermoelectric performance by significantly reducing the thermal conductivity. Nevertheless, porous structures are affected by issues, including restricted enhancements in performance attributed to decreased electronic conductivity and degraded mechanical strength. This study introduces an innovative strategy for overcoming these challenges using porous Bi0.4Sb1.6Te3 (BST) by combining porous structuring and interface engineering via atomic layer deposition (ALD). Porous BST powder was produced by selectively dissolving KCl in a milled mixture of BST and KCl; the interfaces were engineered by coating ZnO films through ALD. This novel architecture remarkably reduced the thermal conductivity owing to the presence of several nanopores and ZnO/BST heterointerfaces, promoting efficient phonon scattering. Additionally, the ZnO coating mitigated the high resistivity associated with the porous structure, resulting in an improved power factor. Consequently, the ZnO-coated porous BST demonstrated a remarkable enhancement in thermoelectric efficiency, with a maximum zT of approximately 1.53 in the temperature range of 333-353 K, and a zT of 1.44 at 298 K. Furthermore, this approach plays a significant role in enhancing the mechanical strength, effectively mitigating a critical limitation of porous structures. These findings open new avenues for the development of advanced porous thermoelectric materials and highlight their potential for precise interface engineering through the ALD.

Selective Dissolution-Derived Nanoporous Design of Impurity-Free Bi2 Te3 Alloys with High Thermoelectric Performance.

Thermoelectric technology, which has been receiving attention as a sustainable energy source, has limited applications because of its relatively low conversion efficiency. To broaden their application scope, thermoelectric materials require a high dimensionless figure of merit (ZT). Porous structuring of a thermoelectric material is a promising approach to enhance ZT by reducing its thermal conductivity. However, nanopores do not form in thermoelectric materials in a straightforward manner; impurities are also likely to be present in thermoelectric materials. Here, a simple but effective way to synthesize impurity-free nanoporous Bi0.4 Sb1.6 Te3 via the use of nanoporous raw powder, which is scalably formed by the selective dissolution of KCl after collision between Bi0.4 Sb1.6 Te3 and KCl powders, is proposed. This approach creates abundant nanopores, which effectively scatter phonons, thereby reducing the lattice thermal conductivity by 33% from 0.55 to 0.37 W m-1 K-1 . Benefitting from the optimized porous structure, porous Bi0.4 Sb1.6 Te3 achieves a high ZT of 1.41 in the temperature range of 333-373 K, and an excellent average ZT of 1.34 over a wide temperature range of 298-473 K. This study provides a facile and scalable method for developing high thermoelectric performance Bi2 Te3 -based alloys that can be further applied to other thermoelectric materials.

Epitaxial Growth of ß-Ga2O3 Thin Films on Si with YSZ Buffer Layer.

We report the epitaxial growth of (2̅01)-oriented ß-Ga2O3 thin films on a (001) Si substrate using the pulsed laser deposition technique employing epitaxial yttria-stabilized zirconia (YSZ) buffer layers. Epitaxial ß-Ga2O3 thin films possess a biaxial compressive strain on YSZ single-crystal substrates while they exhibit a biaxial tensile strain on YSZ-buffered Si substrates. Post-annealing improves the crystalline quality of ß-Ga2O3 thin films. High-resolution X-ray diffraction analyses reveal that the epitaxial (2̅01) ß-Ga2O3 thin films on Si have eight in-plane domain variants to accommodate the large difference in the crystal structure between monoclinic ß-Ga2O3 and cubic YSZ. The results provide a pathway to integrate epitaxial ß-Ga2O3 thin films on a Si gold standard substrate, which will expand the application scope beyond high-power electronics.

Low-Power Low-Noise Amplifier Using Attenuation-Adaptive Noise Control for Ultrasound Imaging Systems.

This paper presents a low-noise amplifier (LNA) using attenuation-adaptive noise control (AANC) for ultrasound imaging systems. The proposed AANC reduces unnecessary power consumption of the LNA, which arises from useless noise floor, by controlling the noise floor of the LNA with respect to the attenuation of the ultrasound. In addition, a current feedback amplifier with a source-degenerated input stage reduces variations of the bandwidth and the closed loop gain, which are caused by the AANC. The proposed LNA was fabricated using a 0.18-[Formula: see text] CMOS process. The input-referred voltage noise density of the fabricated LNA is 1.01 [Formula: see text] at the frequency of 5 MHz. The second harmonic distortion is -53.5 dB when the input signal frequency is 5 MHz and the output voltage swing is 2 [Formula: see text]. The power consumption of the LNA using the AANC is 16.2 mW at the supply voltage of 1.8 V, which is reduced to 64% of that without using the AANC. The noise efficiency factor (NEF) of the proposed LNA is 3.69, to our knowledge, which is the lowest NEF compared with previous LNAs for ultrasound imaging.

A Readout IC Using Two-Step Fastest Signal Identification for Compact Data Acquisition of PET Systems.

A readout integrated circuit (ROIC) using two-step fastest signal identification (FSI) is proposed to reduce the number of input channels of a data acquisition (DAQ) block with a high-channel reduction ratio. The two-step FSI enables the proposed ROIC to filter out useless input signals that arise from scattering and electrical noise without using complex and bulky circuits. In addition, an asynchronous fastest signal identifier and a self-trimmed comparator are proposed to identify the fastest signal without using a high-frequency clock and to reduce misidentification, respectively. The channel reduction ratio of the proposed ROIC is 16:1 and can be extended to 16 × N:1 using N ROICs. To verify the performance of the two-step FSI, the proposed ROIC was implemented into a gamma photon detector module using a Geiger-mode avalanche photodiode with a lutetium-yttrium oxyorthosilicate array. The measured minimum detectable time is 1 ns. The difference of the measured energy and timing resolution between with and without the two-step FSI are 0.8% and 0.2 ns, respectively, which are negligibly small. These measurement results show that the proposed ROIC using the two-step FSI reduces the number of input channels of the DAQ block without sacrificing the performance of the positron emission tomography (PET) systems.

Additional effects of transcranial direct-current stimulation and trigger-point injection for treatment of myofascial pain syndrome: a pilot study with randomized, single-blinded trial.

BACKGROUND: Chronic pain caused by myofascial pain syndrome (MPS) results in generalized and debilitating conditions. Trigger-point injection (TPI) is the mainstay of MPS management to reduce acute and localized pain. Other adjunctive intervention to modulate the central pain pathway might be helpful if they are combined with TPI. Transcranial direct-current stimulation (tDCS), which is a form of neurostimulation, has been reported to be safe and effective in treating chronic pain by changing cortical excitability. OBJECTIVES: To determine whether there is an additional effect of tDCS and TPI to reduce pain in patients with MPS. PATIENTS: Twenty-one patients with newly diagnosed MPS of shoulder girdle muscles. INTERVENTIONS: Patients were randomly assigned into 1 of 3 groups (2 active and 1 sham stimulation groups) and received TPI. Immediately after TPI, tDCS (2 mA for 20 minutes on 5 consecutive days) was administered. For the active stimulation groups, tDCS was applied over 2 different locations (primary motor cortex and dorsolateral prefrontal cortex [DLPFC]). OUTCOME MEASURES: Visual analogue scale (VAS), Pain Threshold Test, and short form of the McGill Pain Questionnaire were measured before and immediately after stimulation for 5 consecutive days. RESULTS: The mean VAS values were decreased in all three groups after 5 days. There was a significant change between before and after stimulation only in the DLPFC group. The significant change in the mean VAS value was shown from after the second stimulation session (p=0.031), and this remained significant until the last stimulation session (p=0.027). CONCLUSION: This study suggests that tDCS over DLPFC may have additional effects with TPI to reduce pain in patients with MPS. tDCS over DLPFC can be used to reverse central pain pathway by modulating cortical plasticity.

Strain-assisted, low-temperature synthesis of high-performance thermoelectric materials.

Utilizing internal energy artificially implemented by cold-pressing in the specimens, we demonstrate a way to synthesize high-quality bulk thermoelectric materials at otherwise too low a temperature to approach to an equilibrium state. This low-temperature synthesis technique will provide a new opportunity to integrate high-performance thermoelectric materials into various electronic devices for a built-in energy source, as well as to develop low-cost fabrication methods.

Clinical and sonographic risk factors for hemiplegic shoulder pain: A longitudinal observational study.

OBJECTIVE: To identify baseline risk factors associated with hemiplegic shoulder pain during the first 6 months after a stroke and to investigate changes in these risk factors over time. DESIGN: Longitudinal observational study. PATIENTS: A total of 94 patients with first-ever unilateral stroke lesion within 1 month after stroke. METHODS: Clinical, radiological and sonographic evaluations were performed at baseline. Hemiplegic shoulder pain was assessed at 1, 3 and 6 months post-stroke. Associations between baseline factors and hemiplegic shoulder pain during the first 6 months and hemiplegic shoulder pain at 1, 3 and 6 months poststroke were analysed. RESULTS: Poor arm motor function, indicated by a poor National Institutes of Health Stroke Scale item 5 score (odds ratio (OR) = 3.0; 95% confidence interval (CI) = 1.1-7.7) and the presence of supraspinatus tendon pathology (OR = 4.2; 95% CI = 1.4-12.9), were associated with hemiplegic shoulder pain. While patients with adhesive capsulitis, glenohumeral subluxation, or long head of biceps tendon effusion showed a higher prevalence of hemiplegic shoulder pain at 1 month after stroke, those with supraspinatus tendon pathology showed a higher prevalence at 3 and 6 months. CONCLUSION: Patients at high risk of hemiplegic shoulder pain with severe arm paralysis and supraspinatus tendon pathology require more careful attention during the rehabilitation period.