Reliability Analysis of PAUT Based on the Round-Robin Test for Pipe Welds with Thermal Fatigue Cracks.

Thermal fatigue cracks occurring in pipes in nuclear power plants pose a high degree of risk. Thermal fatigue cracks are generated when the thermal fatigue load caused by local temperature gradients is repeatedly applied. The flaws are mainly found in welds, owing to the effects of stress concentration caused by the material properties and geometric shapes of welds. Thermal fatigue pipes are classified as targets of risk-informed in-service inspection, for which ultrasonic testing, a volumetric non-destructive testing method, is applied. With the advancement of ultrasonic testing techniques, various studies have been conducted recently to apply the phased array ultrasonic testing (PAUT) method to the inspection of thermal fatigue cracks occurring on pipes. A quantitative reliability analysis of the PAUT method must be performed to apply the PAUT method to on-site thermal fatigue crack inspection. In this study, to evaluate the quantitative reliability of the PAUT method for thermal fatigue cracks, we fabricated crack specimens with the thermal fatigue mechanism applied to the pipe welds. We performed a round-robin test to collect PAUT data and determine the validity of the detection performance (probability of detection; POD) and the error in the sizing accuracy (root-mean-square error; RMSE) evaluation. The analysis results of the POD and sizing performance of the length and depth of thermal fatigue cracks were comparatively evaluated with the acceptance criteria of the American Society of Mechanical Engineers Code to confirm the effectiveness of applying the PAUT method.

Through-Silicon via Device Non-Destructive Defect Evaluation Using Ultra-High-Resolution Acoustic Microscopy System.

In this study, an ultra-high-resolution acoustic microscopy system capable of non-destructively evaluating defects that may occur in thin film structures was fabricated. It is an integrated system of the control module, activation module, and data acquisition system, in which an integrated control software for controlling each module was developed. The control module includes the mechanical, control, and ultrasonic parts. The activation module was composed of the pulser/receiver, and the data acquisition system included an A/D board. In addition, the integrated control software performs system operation and material measurement and includes an analysis program to analyze the obtained A-Scan signals in various ways. A through-silicon via (TSV) device, which is a semiconductor structure, was prepared to verify the performance of the developed system. The TSV device was analyzed using an ultra-high-resolution acoustic microscope. When the C-Scan images were analyzed, void defects with a size of 20 µm were detected at a depth of approximately 32.5 µm. A similar result could be confirmed when the cross section was measured using focused ion beam (FIB) microscopy.

Evaluation of Adhesion Properties of Thin Film Structure through Surface Acoustic Wave Dispersion Simulation.

A theoretical simulation study of the dispersion characteristic of the surface acoustic wave (Rayleigh wave) was conducted by modeling the adhesion interlayer with stiffness coefficients to evaluate the bonding properties of nano-scale thin film structures. For experimental validation, a set of thin film specimens were fabricated-637 nm, 628 nm, 637 nm, 600 nm, and 600 nm thick titanium (Ti) films were deposited on silicon (Si) (100) substrate using a DC Magnetron sputtering process with DC power from 28.8 W, 57.6 W, 86.4 W, 115.2 W, and 144 W. The thicknesses of the Ti films were measured using a scanning electron microscope (SEM). Surface acoustic wave velocity for each of the manufactured thin film specimens was measured by using a V(z) curve technique of a Scanning Acoustic Microscope. The measured velocity, transducer frequency, and thickness of the film were applied to dispersion characteristic simulation for a given stiffness coefficient to calculate adhesion strength of each specimen. To verify the simulation result, the adhesion force of each specimen was measured using a nano-scratch test and then compared with the calculated values from the dispersion characteristic simulation. The value of adhesion strength from the dispersion characteristic simulation and the value of adhesion force of the nano-scratch test were found to have a similar tendency according to the process variable of the thin film. The results demonstrated that the adhesion strength of a thin film could be evaluated quantitatively by calculating the dispersion characteristics with the adhesion interlayer stiffness model.

Development of a High-Resolution Acoustic Sensor Based on ZnO Film Deposited by the RF Magnetron Sputtering Method.

In the study, an acoustic sensor for a high-resolution acoustic microscope was fabricated using zinc oxide (ZnO) piezoelectric ceramics. The c-cut sapphire was processed into a lens shape to deposit a ZnO film using radio frequency (RF) magnetron sputtering, and an upper and a lower electrode were deposited using E-beam evaporation. The electrode was a Au thin film, and a Ti thin film was used as an adhesion layer. The surface microstructure of the ZnO film was observed using a scanning electron microscope (SEM), the thickness of the film was measured using a focused ion beam (FIB) for piezoelectric ceramics deposited on the sapphire wafer, and the thickness of ZnO was measured to be 4.87 µm. As a result of analyzing the crystal growth plane using X-ray diffraction (XRD) analysis, it was confirmed that the piezoelectric characteristics were grown to the (0002) plane. The sensor fabricated in this study had a center frequency of 352 MHz. The bandwidth indicates the range of upper (375 MHz) and lower (328 MHz) frequencies at the -6 dB level of the center frequency. As a result of image analysis using the resolution chart, the resolution was about 1 µm.