Broadband high-contrast-grating-type waveplates for the terahertz range.

The high-contrast-grating waveplates utilizing high contrast between silicon and air refractive indexes were developed in order to perform as a quarter wave and a half wave plate in the selected THz frequency range. The waveplates possessed anti-reflective properties due to the specific inclination of the walls both in parallel and in perpendicular direction to grating axis, efficiently suppressing the reflection losses caused by air-dielectric interface for both transverse magnetic and transverse electric polarizations. Moreover, significant reduction of the transmittance gap was achieved between both polarizations while mitigating overall Fabry-Perot effect. Validation of the concepts was carried out by measuring transmission amplitude and phase spectra of the fabricated samples in a broadband of THz time-domain spectroscopy and vector-network-analysis systems considering also some real applications.

Ultra-broadband absorbance of nanometer-thin pyrolyzed-carbon film on silicon nitride membrane.

Fifty percents absorption by thin film, with thickness is much smaller than the skin depth and optical thickness much smaller than the wavelength, is a well-known concept of classical electrodynamics. This is a valuable feature that has been numerously widely explored for metal films, while chemically inert nanomembranes are a real fabrication challenge. Here we report the 20 nm thin pyrolyzed carbon film (PyC) placed on 300 nm thick silicon nitride (Si3N4) membrane demonstrating an efficient broadband absorption in the terahertz and near infrared ranges. While the bare Si3N4membrane is completely transparent in the THz range, the 20 nm thick PyC layer increases the absorption of the PyC coated Si3N4membrane to 40%. The reflection and transmission spectra in the near infrared region reveal that the PyC film absorption persists to a level of at least 10% of the incident power. Such a broadband absorption of the PyC film opens new pathways toward broadband bolometric radiation detectors.

Green Removal of DUV-Polarity-Modified PMMA for Wet Transfer of CVD Graphene.

To fabricate graphene-based high-frequency electronic and optoelectronic devices, there is a high demand for scalable low-contaminated graphene with high mobility. Graphene synthesized via chemical vapor deposition (CVD) on copper foil appears promising for this purpose, but residues from the polymethyl methacrylate (PMMA) layer, used for the wet transfer of CVD graphene, drastically affect the electrical properties of graphene. Here, we demonstrate a scalable and green PMMA removal technique that yields high-mobility graphene on the most common technologically relevant silicon (Si) substrate. As the first step, the polarity of the PMMA was modified under deep-UV irradiation at λ = 254 nm, due to the formation of ketones and aldehydes of higher polarity, which simplifies hydrogen bonding in the step of its dissolution. Modification of PMMA polarity was confirmed by UV and FTIR spectrometry and contact angle measurements. Consecutive dissolution of DUV-exposed PMMA in an environmentally friendly, binary, high-polarity mixture of isopropyl alcohol/water (more commonly alcohol/water) resulted in the rapid and complete removal of DUV-exposed polymers without the degradation of graphene properties, as low-energy exposure does not form free radicals, and thus the released graphene remained intact. The high quality of graphene after PMMA removal was confirmed by SEM, AFM, Raman spectrometry, and by contact and non-contact electrical conductivity measurements. The removal of PMMA from graphene was also performed via other common methods for comparison. The charge carrier mobility in graphene films was found to be up to 6900 cm2/(V·s), demonstrating a high potential of the proposed PMMA removal method in the scalable fabrication of high-performance electronic devices based on CVD graphene.

High-Frequency and High-Power Performance of n-Type GaN Epilayers with Low Electron Density Grown on Native Substrate.

The n-type GaN epilayers with low electron density were developed on a native substrate using the metalorganic vapour phase epitaxy method and investigated under pulsed electric fields until material breakdown and optically in the spectrum range from 0.1 THz to 60 THz at two temperatures of 77 K and 300 K. The epilayers demonstrated the low-field electron mobility and density values reaching up to 1021 cm2/V·s and 1.06 × 1016 cm-3 (at 300 K) and 2652 cm2/V·s and 0.21 × 1016 cm-3 (at 77 K), respectively. Maximum injected electric power value till the damage of the GaN epilayer was found to be up to 1.8 GW/cm3 and 5.1 GW/cm3 at 77 K and 300 K, respectively. The results indicate new practical possibilities of the GaN material controlled by an external electric field.

Development of Quaternary InAlGaN Barrier Layer for High Electron Mobility Transistor Structures.

A quaternary lattice matched InAlGaN barrier layer with am indium content of 16.5 ± 0.2% and thickness of 9 nm was developed for high electron mobility transistor structures using the metalorganic chemical-vapor deposition method. The structural, morphological, optical and electrical properties of the layer were investigated planning realization of microwave power and terahertz plasmonic devices. The measured X-ray diffraction and modeled band diagram characteristics revealed the structural parameters of the grown In0.165Al0.775Ga0.06N/Al0.6Ga0.4N/GaN heterostructure, explaining the origin of barrier photoluminescence peak position at 3.98 eV with the linewidth of 0.2 eV and the expected red-shift of 0.4 eV only. The thermally stable density of the two-dimension electron gas at the depth of 10.5 nm was experimentally confirmed to be 1.2 × 1013 cm-2 (1.6 × 1013 cm-2 in theory) with the low-field mobility values of 1590 cm2/(V·s) and 8830 cm2/(V·s) at the temperatures of 300 K and 77 K, respectively.

Antenna-Coupled Titanium Microbolometers: Application for Precise Control of Radiation Patterns in Terahertz Time-Domain Systems.

An ability of lensless titanium-based antenna coupled microbolometers (Ti-µbolometers) operating at room temperature to monitor precisely radiation patterns in terahertz time-domain spectroscopy (THz-TDS) systems are demonstrated. To provide comprehensive picture, two different THz-TDS systems and Ti-µbolometers coupled with three different antennas-narrowband dipole antennas for 0.3 THz, 0.7 THz and a log-periodic antenna for wideband detection-were selected for experiments. Radiation patterns, spatial beam profiles and explicit beam evolution along the propagation axis are investigated; polarization-sensitive properties under various THz emitter power ranges are revealed. It was found that the studied Ti-µbolometers are convenient lensless sensors suitable to discriminate and control THz radiation pattern features in various wideband THz-TDS systems.

Spatial coherence of hybrid surface plasmon-phonon-polaritons in shallow n-GaN surface-relief gratings.

Dispersion characteristics of hybrid surface plasmon-phonon-polaritons (SPPhPs) on the air/polar semiconductor interface were investigated by means of shallow surface relief grating using emission spectroscopy methods. A set of grating structures with optimal 1 µm depth and periods from 8 to 22 µm was developed on a heavily-doped GaN crystal. The SPPhPs were excited by thermal heating or electrical biasing of the samples which radiated directive polarized features in an extremely narrowband spectrum range. Detailed analysis of damping factors and propagation losses revealed maximum values of quality factor and spatial coherence of hybrid SPPhPs modes. Highest quality factor was found to be practically independent on the period of the shallow grating, as it was always detected near the frequency of transverse optical phonon, demonstrating values as high as 88 and 200 in experiment and theory, respectively. Meanwhile, the largest values of coherence length strongly depended on the grating as the propagation losses of hybrid SPPhP modes showed a tendency to accumulate with the wavevector increase. The sample with 22 µm grating period demonstrated the highest coherence of hybrid polaritons with the experimental (theoretical) coherence length values as high as 1.6 mm (2.3 mm).

Laser Processing of Transparent Wafers with a AlGaN/GaN Heterostructures and High-Electron Mobility Devices on a Backside.

Sapphire and silicon carbide substrates are used for growth of the III-N group heterostructures to obtain the electronic devices for high power and high frequency applications. Laser micromachining of deep channels in the frontside of the transparent wafers followed by mechanical cleavage along the ablated trench is a useful method for partitioning of such substrates after the development of the electronics on a backside. However, in some cases damage to the component performance occurs. Therefore, the influence of various parameters of the laser processing, such as fluence in the spot size, substrate thickness, orientation, and the polarization of focused laser beam, to the formation of damage zones at both sides of the transparent substrate with thin coatings when ablating the trenches from one side was investigated. The vicinity effect of the ablated trenches on the performance of the electronics was also evaluated, confirming the laser micromachining suitability for the dicing of transparent wafers with high accuracy and flexibility.

AlGaN/GaN on SiC Devices without a GaN Buffer Layer: Electrical and Noise Characteristics.

We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN buffer. Such a GaN-SiC hybrid material was developed in order to improve thermal management and to reduce trapping effects. Fabricated Schottky barrier diodes (SBDs) demonstrated an ideality factor n at approximately 1.7 and breakdown voltages (fields) up to 780 V (approximately 0.8 MV/cm). Hall measurements revealed a thermally stable electron density at N2DEG = 1 × 1013 cm-2 of two-dimensional electron gas in the range of 77-300 K, with mobilities µ = 1.7 × 103 cm2/V∙s and µ = 1.0 × 104 cm2/V∙s at 300 K and 77 K, respectively. The maximum drain current and the transconductance were demonstrated to be as high as 0.5 A/mm and 150 mS/mm, respectively, for the transistors with gate length LG = 5 µm. Low-frequency noise measurements demonstrated an effective trap density below 1019 cm-3 eV-1. RF analysis revealed fT and fmax values up to 1.3 GHz and 6.7 GHz, respectively, demonstrating figures of merit fT × LG up to 6.7 GHz × µm. These data further confirm the high potential of a GaN-SiC hybrid material for the development of thin high electron mobility transistors (HEMTs) and SBDs with improved thermal stability for high-frequency and high-power applications.

Bessel terahertz imaging with enhanced contrast realized by silicon multi-phase diffractive optics.

Bessel terahertz (THz) imaging employing a pair of thin silicon multi-phase diffractive optical elements is demonstrated in continuous wave mode at 0.6 THz. A proposed Bessel zone plate (BZP) design - discrete axicon containing 4 phase quantization levels - based on high-resistivity silicon and produced by laser ablation technology allowed to extend the focal depth up to 20 mm with minimal optical losses and refuse employment of bulky parabolic mirrors in the imaging setup. Compact THz imaging system in transmission geometry reveals a possibility to inspect objects of more than 10 mm thickness with enhanced contrast and increased resolution up to 0.6 of the wavelength by applying deconvolution algorithms.

Laser-processed diffractive lenses for the frequency range of 4.7 THz.

The development of diffractive lenses for the upper terahertz (THz) frequency range above 1 THz was successfully demonstrated by employing a direct laser ablation (DLA) technology. Two types of samples such as the Soret zone plate lens and the multi-level phase-correcting Fresnel lens were fabricated of a metal foil and crystalline silicon, respectively. The focusing performance along the optical axis of a 4.745 THz quantum cascade laser beam with respect to the positioning angle of the sample was studied by using a real-time microbolometric camera. A binary-phase profile sample demonstrated the values of the focusing gain and focused beam size up to 25 dB and 0.15 mm (2.4λ), respectively. The increase of the phase quantization level to eight led to higher (up to 29 dB) focusing gain values without a measurable increase of optical losses. All the samples were tolerant to misalignment as large as 10 deg of oblique incidence with a focusing power drop no larger than 10%. The results pave the way for new applications of industry-ready DLA technology in the entire THz range.

Non-destructive inspection of food and technical oils by terahertz spectroscopy.

Quality control and non-destructive monitoring are of notable interest of food and pharmaceutical industries. It relies on the ability of non-invasive inspection which can be employed for manufacturing process control. We hereby apply terahertz (THz) time-domain spectroscopy as non-destructive technique to monitor pure and degraded oils as well as hydrocarbon chemicals. Significant differences in the spectra of refractive index (RI) and absorption coefficient arising from the presence of ester linkages in the edible and technical oils were obtained. Explicit increase from 1.38 to 1.5 of the RI in all THz spectrum range was observed in hydrocarbons and mono-functional esters with the increase of molar mass. This fact is in contrast of RI dependence on molar mass in multi-functional esters, such as Adipate or vegetable oils, where it is around 1.54. Degradation products, Oleic Acid (OA) and water in particular, lead only to some changes in absorption coefficient and RI spectra of vegetable oils. We demonstrate that complex colloidal and supramolecular processes, such as dynamics of inverse micelles and oil hydrolysis, take part during oil degradation and are responsible for non-uniform dependence of optical properties on extent of degradation.

Spectroscopic Analysis of Melatonin in the Terahertz Frequency Range.

There is a need for fast and reliable quality and authenticity control tools of pharmaceutical ingredients. Among others, hormone containing drugs and foods are subject to scrutiny. In this study, terahertz (THz) spectroscopy and THz imaging are applied for the first time to analyze melatonin and its pharmaceutical product Circadin. Melatonin is a hormone found naturally in the human body, which is responsible for the regulation of sleep-wake cycles. In the THz frequency region between 1.5 THz and 4.5 THz, characteristic melatonin spectral features at 3.21 THz, and a weaker one at 4.20 THz, are observed allowing for a quantitative analysis within the final products. Spectroscopic THz imaging of different concentrations of Circadin and melatonin as an active pharmaceutical ingredient in prepared pellets is also performed, which permits spatial recognition of these different substances. These results indicate that THz spectroscopy and imaging can be an indispensable tool, complementing Raman and Fourier transform infrared spectroscopies, in order to provide quality control of dietary supplements and other pharmaceutical products.

Spectroscopic Terahertz Imaging at Room Temperature Employing Microbolometer Terahertz Sensors and Its Application to the Study of Carcinoma Tissues.

A terahertz (THz) imaging system based on narrow band microbolometer sensors (NBMS) and a novel diffractive lens was developed for spectroscopic microscopy applications. The frequency response characteristics of the THz antenna-coupled NBMS were determined employing Fourier transform spectroscopy. The NBMS was found to be a very sensitive frequency selective sensor which was used to develop a compact all-electronic system for multispectral THz measurements. This system was successfully applied for principal components analysis of optically opaque packed samples. A thin diffractive lens with a numerical aperture of 0.62 was proposed for the reduction of system dimensions. The THz imaging system enhanced with novel optics was used to image for the first time non-neoplastic and neoplastic human colon tissues with close to wavelength-limited spatial resolution at 584 GHz frequency. The results demonstrated the new potential of compact RT THz imaging systems in the fields of spectroscopic analysis of materials and medical diagnostics.

Qualitative and quantitative analysis of calcium-based microfillers using terahertz spectroscopy and imaging.

In different industrial applications, several strictly defined parameters of calcium-based microfillers such as average particle size, particle size distribution, morphology, specific surface area, polymorphism and chemical purity, play a key role in the determination of its usefulness and effectiveness. Therefore, an analytical tool is required for rapid and non-destructive characterization of calcium-based microfillers during the synthesis process or before its use in a further manufacturing process. Since spectroscopic techniques are preferred over microscopy and thermogravimetry, particularly due to its non-destructive nature and short analysis time, we applied terahertz (THz) spectroscopy to analyse calcite microfillers concentration in polymer matrix, its granulation and chemical treatment. Based on the analysis of peak absorbance amplitude, peak frequency position, and the appearance of additional spectral features, quantitative and qualitative analysis was successfully achieved. In addition, THz imaging was also applied for both quantitative and qualitative analysis of calcium-based microfillers. By using spatial distribution map, the inhomogeneity in concentration of calcium carbonate in polymer matrix was characterized. Moreover, by THz spectroscopy and imaging different calcium compounds were detected in binary mixtures. Finally, we demonstrated that the applied spectroscopic technique offers valuable results and can be, in combination with other spectroscopic and microscopic techniques, converted to a powerful rapid analytical tool.

Reflective terahertz imaging with the TEM01 mode laser beam.

Reflective terahertz imaging with a first-order Hermite-Gaussian laser beam was experimentally investigated. High spatial resolution targets prepared by direct laser microprocessing were used to evaluate the performance. The reflection imaging system at 2.524 THz frequency demonstrated up to diffraction limited resolution using the single focusing mirror with the numerical aperture not smaller than 0.6. The TEM(01) mode laser beam was also applied for practical samples such as silicon solar cell terahertz (THz) imaging. It is shown that usage of appropriate optics enables us to obtain high-quality THz images with the multimode laser beam.