Singular Hall Response from a Correlated Ferromagnetic Flat Nodal-Line Semimetal.

Topological quantum phases are largely understood in weakly correlated systems, which have identified various quantum phenomena, such as the spin Hall effect, protected transport of helical fermions, and topological superconductivity. Robust ferromagnetic order in correlated topological materials particularly attracts attention, as it can provide a versatile platform for novel quantum devices. Here, a singular Hall response arising from a unique band structure of flat topological nodal lines in combination with electron correlation in a van der Waals ferromagnetic semimetal, Fe3GaTe2, with a high Curie temperature of Tc = 347 K is reported. High anomalous Hall conductivity violating the conventional scaling, resistivity upturn at low temperature, and a large Sommerfeld coefficient are observed in Fe3GaTe2, which implies heavy fermion features in this ferromagnetic topological material. The scanning tunneling microscopy, circular dichroism in angle-resolved photoemission spectroscopy, and theoretical calculations support the original electronic features of the material. Thus, low-dimensional Fe3GaTe2 with electronic correlation, topology, and room-temperature ferromagnetic order appears to be a promising candidate for robust quantum devices.

Wafer-Scale Synthesis of Highly Oriented 2D Topological Semimetal PtTe2 via Tellurization.

Platinum ditelluride (1T-PtTe2) is a two-dimensional (2D) topological semimetal with a distinctive band structure and flexibility of van der Waals integration as a promising candidate for future electronics and spintronics. Although the synthesis of large-scale, uniform, and highly crystalline films of 2D semimetals system is a prerequisite for device application, the synthetic methods meeting these criteria are still lacking. Here, we introduce an approach to synthesize highly oriented 2D topological semimetal PtTe2 using a thermally assisted conversion called tellurization, which is a cost-efficient method compared to the other epitaxial deposition methods. We demonstrate that achieving highly crystalline 1T-PtTe2 using tellurization is not dependent on epitaxy but rather relies on two critical factors: (i) the crystallinity of the predeposited platinum (Pt) film and (ii) the surface coverage ratio of the Pt film considering lateral lattice expansion during transformation. By optimizing the surface coverage ratio of the epitaxial Pt film, we successfully obtained 2 in. wafer-scale uniformity without in-plane misalignment between antiparallelly oriented domains. The electronic band structure of 2D topological PtTe2 is clearly resolved in momentum space, and we observed an interesting 6-fold gapped Dirac cone at the Fermi surface. Furthermore, ultrahigh electrical conductivity down to ∼3.8 nm, which is consistent with that of single crystal PtTe2, was observed, proving its ultralow defect density.

Tunable Colossal Anomalous Hall Conductivity in Half-Metallic Material Induced by d-Wave-Like Spin-Orbit Gap.

The anomalous Hall conductivity (AHC) in magnetic materials, resulting from inverted band topology, has emerged as a key adjustable function in spin-torque devices and advanced magnetic sensors. Among systems with near-half-metallicity and broken time-reversal symmetry, cobalt disulfide (CoS2) has proven to be a material capable of significantly enhancing its AHC. In this study, the AHC of CoS2 is empirically assessed by manipulating the chemical potential through Fe- (hole) and Ni- (electron) doping. The primary mechanism underlying the colossal AHC is identified through the application of density functional theory and tight-binding analyses. The main source of this substantial AHC is traced to four spin-polarized massive Dirac dispersions in the kz = 0 plane of the Brillouin zone, located slightly below the Fermi level. In Co0.95Fe0.05S2, the AHC, which is directly proportional to the momentum-space integral of the Berry curvature (BC), reached a record-breaking value of 2507 Ω-1cm-1. This is because the BCs of the four Dirac dispersions all exhibit the same sign, a consequence of the d-wave-like spin-orbit coupling among spin-polarized eg orbitals.

Signatures of a surface spin-orbital chiral metal.

The relation between crystal symmetries, electron correlations and electronic structure steers the formation of a large array of unconventional phases of matter, including magneto-electric loop currents and chiral magnetism1-6. The detection of such hidden orders is an important goal in condensed-matter physics. However, until now, non-standard forms of magnetism with chiral electronic ordering have been difficult to detect experimentally7. Here we develop a theory for symmetry-broken chiral ground states and propose a methodology based on circularly polarized, spin-selective, angular-resolved photoelectron spectroscopy to study them. We use the archetypal quantum material Sr2RuO4 and reveal spectroscopic signatures that, despite being subtle, can be reconciled with the formation of spin-orbital chiral currents at the surface of the material8-10. As we shed light on these chiral regimes, our findings pave the way for a deeper understanding of ordering phenomena and unconventional magnetism.

Broken Kramers Degeneracy in Altermagnetic MnTe.

Altermagnetism is a newly identified fundamental class of magnetism with vanishing net magnetization and time-reversal symmetry broken electronic structure. Probing the unusual electronic structure with nonrelativistic spin splitting would be a direct experimental verification of an altermagnetic phase. By combining high-quality film growth and in situ angle-resolved photoemission spectroscopy, we report the electronic structure of an altermagnetic candidate, α-MnTe. Temperature-dependent study reveals the lifting of Kramers degeneracy accompanied by a magnetic phase transition at T_{N}=267 K with spin splitting of up to 370 meV, providing direct spectroscopic evidence for altermagnetism in MnTe.

Visualizing the Low-Energy Electronic Structure of Prototypical Hybrid Halide Perovskite through Clear Band Measurements.

Organic-inorganic hybrid perovskites (OIHPs) are a promising class of materials that rival conventional semiconductors in various optoelectronic applications. However, unraveling the precise nature of their low-energy electronic structures continues to pose a significant challenge, primarily due to the absence of clear band measurements. Here, we investigate the low-energy electronic structure of CH3NH3PbI3 (MAPI3) using angle-resolved photoelectron spectroscopy combined with ab initio density functional theory. We successfully visualize the electronic structure of MAPI3 near the bulk valence band maximum by using a laboratory photon source (He Iα, 21.2 eV) at low temperature and explore its fundamental properties. The observed valence band exhibits a highly isotropic and parabolic band characterized by small effective masses of 0.20-0.21 me, without notable spectral signatures associated with a large polaron or the Rashba effect, subjects that are intensely debated in the literature. Concurrently, our spin-resolved measurements directly disprove the giant Rashba scenario previously suggested in a similar perovskite compound by establishing an upper limit for the Rashba parameter (αR) of 0.28 eV Å. Our results unveil the unusually complex nature of the low-energy electronic structure of OIHPs, thereby advancing our fundamental understanding of this important class of materials.

Ferromagnetic insulating substrate for magnetic proximity studies: LaCoO3thin film.

Ferromagnetic insulators (FMIs) are intriguing not only due to their rare nature, but also due to their potential applications in spintronics and various electronic devices. One of its key promising applications is based on an FMI-induced magnetic proximity effect, which can impose an effective time-reversal symmetry breaking on the target ultrathin layer to realize novel emergent phenomena. Here, we conduct systematic studies on thin film LaCoO3, an insulator known to be ferromagnet under tensile strain, with varying thicknesses, to establish it as an FMI platform to be integrated in heterostructures. The optimal thickness of the LaCoO3layer, providing a smooth surface and robust ferromagnetism with large remanence, is determined. A heterostructure consisting of an ultrathin target layer (2 uc SrRuO3), the LaCoO3FMI layer, and the La0.5Sr0.5CoO3conducting layer has been fabricated and the angle-resolved photoemission spectroscopy measurement on the multi-layer system demonstrates a sharp Fermi edge and a well-defined Fermi surface without the charging effect. This demonstrates the feasibility of the proposed heterostructure using LaCoO3thin film as the FMI layer, and further lays a groundwork to investigate the magnetic proximity induced phases in quantum materials.

Melting of Unidirectional Charge Density Waves across Twin Domain Boundaries in GdTe3.

Solids undergoing a transition from order to disorder experience a proliferation of topological defects. The melting process generates transient quantum states. However, their dynamic nature with a femtosecond lifetime hinders exploration with atomic precision. Here, we suggest an alternative approach to the dynamic melting process by focusing on the interface created by competing degenerate quantum states. We use a scanning tunneling microscope (STM) to visualize the unidirectional charge density wave (CDW) and its spatial progression ("static melting") across a twin domain boundary (TDB) in the layered material GdTe3. Combining the STM with a spatial lock-in technique, we reveal that the order parameter amplitude attenuates with the formation of dislocations and thus two different unidirectional CDWs coexist near the TDB, reducing the CDW anisotropy. Notably, we discovered a correlation between this anisotropy and the CDW gap. Our study provides valuable insight into the behavior of topological defects and transient quantum states.

Growth and Electronic Structure of Copper Oxide Monolayer Epitaxial Films.

Copper-based high-temperature superconductors share a common feature in their crystal structure, which is the presence of a CuO2 plane, where superconductivity takes place. Therefore, important questions arise as to whether superconductivity can exist in a single layer of the CuO2 plane and, if so, how such superconductivity in a single CuO2 plane differs from that in a bulk cuprate system. To answer these questions, studies of the superconductivity in cuprate monolayers are necessary. In this study, we constructed a heterostructure system with a La2-xSrxCuO4 (LSCO) monolayer containing a single CuO2 plane and measured the resulting electronic structures. Monolayer LSCO has metallic and bulk-like electronic structures. The hole doping ratio of the monolayer LSCO is found to depend on the underlying buffer layer due to the interface effect. Our work will provide a platform for research into ideal two-dimensional cuprate systems.

Kondo interaction in FeTe and its potential role in the magnetic order.

Finding d-electron heavy fermion states has been an important topic as the diversity in d-electron materials can lead to many exotic Kondo effect-related phenomena or new states of matter such as correlation-driven topological Kondo insulator. Yet, obtaining direct spectroscopic evidence for a d-electron heavy fermion system has been elusive to date. Here, we report the observation of Kondo lattice behavior in an antiferromagnetic metal, FeTe, via angle-resolved photoemission spectroscopy, scanning tunneling spectroscopy and transport property measurements. The Kondo lattice behavior is represented by the emergence of a sharp quasiparticle and Fano-type tunneling spectra at low temperatures. The transport property measurements confirm the low-temperature Fermi liquid behavior and reveal successive coherent-incoherent crossover upon increasing temperature. We interpret the Kondo lattice behavior as a result of hybridization between localized Fe 3dxy and itinerant Te 5pz orbitals. Our observations strongly suggest unusual cooperation between Kondo lattice behavior and long-range magnetic order.

Observation of the orbital Hall effect in a light metal Ti.

The orbital Hall effect1 refers to the generation of electron orbital angular momentum flow transverse to an external electric field. Contrary to the common belief that the orbital angular momentum is quenched in solids, theoretical studies2,3 predict that the orbital Hall effect can be strong and is a fundamental origin of the spin Hall effect4-7 in many transition metals. Despite the growing circumstantial evidence8-11, its direct detection remains elusive. Here we report the magneto-optical observation of the orbital Hall effect in the light metal titanium (Ti). The Kerr rotation by the orbital magnetic moment accumulated at Ti surfaces owing to the orbital Hall current is measured, and the result agrees with theoretical calculations semi-quantitatively and is supported by the orbital torque12 measurement in Ti-based magnetic heterostructures. This result confirms the orbital Hall effect and indicates that the orbital angular momentum is an important dynamic degree of freedom in solids. Moreover, this calls for renewed studies of the orbital effect on other degrees of freedom such as spin2,3,13,14, valley15,16, phonon17-19 and magnon20,21 dynamics.

Tuning orbital-selective phase transitions in a two-dimensional Hund's correlated system.

Hund's rule coupling (J) has attracted much attention recently for its role in the description of the novel quantum phases of multi-orbital materials. Depending on the orbital occupancy, J can lead to various intriguing phases. However, experimental confirmation of the orbital occupancy dependency has been difficult as controlling the orbital degrees of freedom normally accompanies chemical inhomogeneities. Here, we demonstrate a method to investigate the role of orbital occupancy in J related phenomena without inducing inhomogeneities. By growing SrRuO3 monolayers on various substrates with symmetry-preserving interlayers, we gradually tune the crystal field splitting and thus the orbital degeneracy of the Ru t2g orbitals. It effectively varies the orbital occupancies of two-dimensional (2D) ruthenates. Via in-situ angle-resolved photoemission spectroscopy, we observe a progressive metal-insulator transition (MIT). It is found that the MIT occurs with orbital differentiation: concurrent opening of a band insulating gap in the dxy band and a Mott gap in the dxz/yz bands. Our study provides an effective experimental method for investigation of orbital-selective phenomena in multi-orbital materials.

Heteroepitaxial Control of Fermi Liquid, Hund Metal, and Mott Insulator Phases in Single-Atomic-Layer Ruthenates.

Interfaces between dissimilar correlated oxides can offer devices with versatile functionalities, and great efforts have been made to manipulate interfacial electronic phases. However, realizing such phases is often hampered by the inability to directly access the electronic structure information; most correlated interfacial phenomena appear within a few atomic layers from the interface. Here, atomic-scale epitaxy and photoemission spectroscopy are utilized to realize the interface control of correlated electronic phases in atomic-scale ruthenate-titanate heterostructures. While bulk SrRuO3 is a ferromagnetic metal, the heterointerfaces exclusively generate three distinct correlated phases in the single-atomic-layer limit. The theoretical analysis reveals that atomic-scale structural proximity effects yield Fermi liquid, Hund metal, and Mott insulator phases in the quantum-confined SrRuO3 . These results highlight the extensive interfacial tunability of electronic phases, hitherto hidden in the atomically thin correlated heterostructure. Moreover, this experimental platform suggests a way to control interfacial electronic phases of various correlated materials.

Electric Control of 2D Van Hove Singularity in Oxide Ultra-Thin Films.

Divergent density of states (DOS) can induce extraordinary phenomena such as significant enhancement of superconductivity and unexpected phase transitions. Moreover, van Hove singularities (VHSs) lead to divergent DOS in 2D systems. Despite recent interest in VHSs, only a few controllable cases have been reported to date. In this work, by utilizing an atomically ultra-thin SrRuO3 film, the electronic structure of a 2D VHS is investigated with angle-resolved photoemission spectroscopy and transport properties are controlled. By applying electric fields with alkali metal deposition and ionic-liquid gating methods, the 2D VHS and the sign of the charge carrier are precisely controlled. Use of a tunable 2D VHS in an atomically flat oxide film could serve as a new strategy to realize infinite DOS near the Fermi level, thereby allowing efficient tuning of electric properties.

Defect Engineering in A2 BO4 Thin Films via Surface-Reconstructed LaSrAlO4 Substrates.

Ruddlesden-Popper oxides (A2 BO4 ) have attracted significant attention regarding their potential application in novel electronic and energy devices. However, practical uses of A2 BO4 thin films have been limited by extended defects such as out-of-phase boundaries (OPBs). OPBs disrupt the layered structure of A2 BO4 , which restricts functionality. OPBs are ubiquitous in A2 BO4 thin films but inhomogeneous interfaces make them difficult to suppress. Here, OPBs in A2 BO4 thin films are suppressed using a novel method to control the substrate surface termination. To demonstrate the technique, epitaxial thin films of cuprate superconductor La2- x Srx CuO4 (x = 0.15) are grown on surface-reconstructed LaSrAlO4 substrates, which are terminated with self-limited perovskite double layers. To date, La2- x Srx CuO4 thin films are grown on LaSrAlO4 substrates with mixed-termination and exhibit multiple interfacial structures resulting in many OPBs. In contrast, La2- x Srx CuO4 thin films grown on surface-reconstructed LaSrAlO4 substrates energetically favor only one interfacial structure, thus inhibiting OPB formation. OPB-suppressed La2- x Srx CuO4 thin films exhibit significantly enhanced superconducting properties compared with OPB-containing La2- x Srx CuO4 thin films. Defect engineering in A2 BO4 thin films will allow for the elimination of various types of defects in other complex oxides and facilitate next-generation quantum device applications.

Quantum electron liquid and its possible phase transition.

Purely quantum electron systems exhibit intriguing correlated electronic phases by virtue of quantum fluctuations in addition to electron-electron interactions. To realize such quantum electron systems, a key ingredient is dense electrons decoupled from other degrees of freedom. Here, we report the discovery of a pure quantum electron liquid that spreads up to ~3 Å in a vacuum on the surface of an electride crystal. Its extremely high electron density and weak hybridization with buried atomic orbitals show the quantum and pure nature of the electrons, which exhibit a polarized liquid phase, as demonstrated by our spin-dependent measurement. Furthermore, upon enhancing the electron correlation strength, the dynamics of the quantum electrons change to that of a non-Fermi liquid along with an anomalous band deformation, suggestive of a transition to a hexatic liquid crystal phase. Our findings develop the frontier of quantum electron systems and serve as a platform for exploring correlated electronic phases in a pure fashion.

Tunable spin injection and detection across a van der Waals interface.

Van der Waals heterostructures with two-dimensional magnets offer a magnetic junction with an atomically sharp and clean interface. This attribute ensures that the magnetic layers maintain their intrinsic spin-polarized electronic states and spin-flipping scattering processes at a minimum level, a trait that can expand spintronic device functionalities. Here, using a van der Waals assembly of ferromagnetic Fe3GeTe2 with non-magnetic hexagonal boron nitride and WSe2 layers, we demonstrate electrically tunable, highly transparent spin injection and detection across the van der Waals interfaces. By varying an electrical bias, the net spin polarization of the injected carriers can be modulated and reversed in polarity, which leads to sign changes of the tunnelling magnetoresistance. We attribute the spin polarization reversals to sizable contributions from high-energy localized spin states in the metallic ferromagnet, so far inaccessible in conventional magnetic junctions. Such tunability of the spin-valve operations opens a promising route for the electronic control of next-generation low-dimensional spintronic device applications.

Association of Occupational Noise Exposure and Incidence of Metabolic Syndrome in a Retrospective Cohort Study.

Metabolic syndrome is one of the common causes of cardiovascular diseases and cancers. Although noise is an environmental factor to which people can be commonly exposed at work and in daily life, there are currently insufficient studies on the relationship between noise and metabolic syndrome. Therefore, the purpose of this study is to investigate the relationship between noise and metabolic syndrome. Using a multivariate time-dependent Cox proportional hazard model, the impacts of occupational noise exposure on metabolic syndrome and its components were analyzed in a retrospective cohort of 60,727 participants from 2014 to 2017. The noise exposure group showed a significantly higher incidence of metabolic syndrome and was associated with elevated triglycerides, blood sugar, and blood pressure, but decreased high-density lipoprotein, among subgroups. There was no statistically significant association with abdominal obesity. Occupational noise exposure significantly contributed to the incidence of metabolic syndrome and changes in its components. This study could be a basis for establishing policies and guidelines to reduce noise exposure that might improve workers' health.

The Association Between the Number of Consecutive Night Shifts and Insomnia Among Shift Workers: A Multi-Center Study.

Objectives: There is a need to determine the optimal limit of consecutive night shift work to reduce insomnia caused by the accumulation of sleep problems among night shift workers. This study aimed to investigate the prevalence of insomnia caused by consecutive night shifts and evaluate the night shift duration that worsens insomnia the most, using a large amount of medical examination data. Methods: Night shift profiles and baseline demographics data of three hospitals were collected from January 2015 to December 2017. For subjects who had been examined more than once at the same institution, information corresponding to the most recent date was used. Multivariate logistic regression was performed to estimate odds ratios (ORs) and 95% confidence intervals (CIs). Pooled ORs were calculated by using the results of the three institutions. Results: Of the 33,669 participants, 31.3% were female. The average age was 41.1 ± 11.1 years and the prevalence of insomnia was 38.7% (n = 13,025). After adjusting for potential confounders and compared to workers who reported not working in consecutive night shifts, odds of insomnia were greatest among workers reporting working three consecutive nights (OR 2.65, 95% CI 1.97-3.56) followed by those working two nights (OR 1.81, 95% CI 1.45-2.26), five nights (OR 1.78, 95% CI 1.56-2.03), and four nights (OR 1.68, 95% CI 1.55-1.82). Conclusion: Our study demonstrates a significant relationship between consecutive night shift and insomnia with multicenter examination data, using common data model. This study could be a basis for establishing policies and guidelines that improve night shift workers' health.